2SK1881-L,S N-channel MOS-FET F-III Series 60V > Features - 0,07Ω 20A 45W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 20 80 ±20 45 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I I V t Q Turn-Off-Time toff (ton=td(off)+tf) Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=20A VGS=10V RGS=25Ω Min. 60 1,0 8 Typ. 1,5 10 0,2 10 0,07 0,05 15 860 300 100 10 40 150 50 DR DRM SD rr rr Symbol R th(ch-a) R th(ch-c) IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Test conditions channel to air channel to case 1,25 60 0,1 Min. Typ. Max. 2,5 500 1,0 100 0,11 0,07 1300 450 150 15 60 230 80 20 80 1,8 Max. 125 2,78 FUJI-ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; -Tel: 069-66 90 29-0; Fax:- 069-66 90 29-56 Fuji Semiconductor, Inc. P.O. Box 702708 - Dallas, TX 75370 972-733-1700 www.fujisemiconductor.com Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A A V ns µC Unit °C/W °C/W 2SK1881-L,S N-channel MOS-FET 60V 0,07Ω 20A F-III Series 45W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → This specification is subject to change without notice! t [s] →