2SK1663-L,S N-channel MOS-FET F-I Series 800V > Features - 4Ω 3A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage > Applications - Switching Regulators UPS DC-DC Converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 800 3 12 3 ±20 80 150 -55 ~ +150 Unit V A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Symbol V (BR)DSS V GS(th) I DSS I Drain Source On-State Resistance Forward Transconductance Input Capacitance R g C Output Capacitance C Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) C t t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time t t V t GSS DS(on) fs iss Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=800V Tch=25°C VGS=0V Tch=125°C VGS=±20V ID=1,5A ID=1,5A Min. 800 2,1 VDS=0V VGS=10V VDS=25V VDS=25V 2 Typ. Max. 3,0 0,01 0,2 4,0 0,5 1,0 Unit V V mA mA 10 100 nA 3 4 900 4 1400 Ω S pF VGS=0V 90 140 pF r f=1MHz VCC=30V ID=2,1A 35 20 40 60 30 60 pF ns ns d(off) VGS=10V 150 60 250 90 ns ns 1 400 1,35 V ns Max. 125 1,56 Unit °C/W °C/W oss rss d(on) f SD rr RGS=50Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. 2SK1663-L,S N-channel MOS-FET 800V 4Ω 3A F-I Series 80W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → This specification is subject to change without notice! t [s] →