2SK2248-01L,S N-channel MOS-FET F-III Series 30V > Features - 0,06Ω 10A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 10 40 ±16 20 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=5A VGS=4V ID=5A VGS=10V ID=5A VDS=10V VDS=25V VGS=0V f=1MHz VCC=10V ID=10A VGS=10V RGS=25 Ω Tch=25°C L=100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 30 1,0 Test conditions channel to air channel to case Min. 5 Typ. Max. 1,5 10 0,2 10 0,045 0,035 10 900 600 160 10 15 110 60 2,0 500 1,0 100 0,080 0,060 1,0 35 0,05 1,5 1350 900 240 15 25 170 90 10 Typ. Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com Max. 6,25 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2248-01L,S N-channel MOS-FET 30V 0,06Ω 10A F-III Series 20W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID → ↑ → VGS(th) [V] Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] → → → Transient Thermal impedance ↑ 12 Zth(ch-c) [K/W] PD [W] Tc [°C] 9 VSD [V] Safe operation area ↑ → Forward Characteristics of Reverse Diode ID [A] 10 6 Tch [°C] VGS [V] 8 VDS [V] C [nF] → Typical Input Charge ↑ 7 VDS [V] ↑ Gate Threshold Voltage vs. Tch 5 ID [A] Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics VDS [V] → This specification is subject to change without notice! t [s] →