2SK2516-01L,S N-channel MOS-FET FAP-III Series 30V > Features - 13mΩ 50A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 50 200 ±16 80 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=12V VDS=25V VGS=0V f=1MHz VCC=12V ID=50A VGS=10V RGS=10Ω Tch=25°C L=100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 30 1,0 Test conditions channel to air channel to case Min. 17 Typ. 1,5 10 0,2 10 16 10 35 3500 1650 830 15 65 190 140 Max. 2,0 500 1,0 100 22 13 5250 2480 1250 25 100 290 210 50 1,25 60 1,80 70 Typ. Max. Unit V V µA mA nA mΩ mΩ S pF pF pF ns ns ns ns A V ns µC Unit 125 °C/W 1,56 °C/W 2SK2516-01L,S N-channel MOS-FET 30V 13µΩ 50A FAP-III Series 80W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [mΩ] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Foward Transconductance Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 → ID [A] Typical Capacitances VGS(th) [V] ↑ gfs [S] ↑ Tch [°C] Typical Gate Charge Characteristics IF=f(VSD); 80µs pulse test; VGS=0V ↑ VDS [V] ↑ 7 8 → Qg [nC] Power Dissipation Safe Operation Area VDS [V] ID=f(VDS): D=0,01, Tc=25°C ↑ ↑ 9 VSD [V] → ↑ Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T 12 PD[W] ID [A] 10 ↑ → Zth(ch-c) [K/W] PD=f(Tc) → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=50A, Tc=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source On-State-Resistance ↑ RDS(ON) [mΩ] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [nF] Typical Transfer Characteristics RDS(on) = f(Tch); ID=25A; VGS=10V Tch [°C] → VDS [V] → t [s] → Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98