2SK2753-01 N-channel MOS-FET FAP-IIS Series 120V > Features - 32mΩ ±50A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-gate-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 120 120 ±50 ±200 ±30 150 150 -55 ~ +150 Unit V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-c) R th(ch-a) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=120V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=50V ID=50A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 120 2,5 Test conditions channel to case channel to air Min. 25 Typ. 3,0 10 0,2 10 24 50 4250 820 250 30 160 150 140 Max. 3,5 500 1,0 100 32 6400 1200 370 45 240 230 210 50 1,3 150 1,1 Typ. 2,0 Max. 0,833 35 Unit V V µA mA nA mΩ S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2753-01 N-channel MOS-FET 120V FAP-IIS Series 32mΩ ±50A 150W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test;TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=10mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; VGS=0V ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Power dissipation PD=f(Tc) ↑ ↑ 9 → VSD [V] Zth(ch-c) [K/W] ↑ ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] PD(W) TC(oC) → → Safe operation area ID=f(VDS): D=0,01, Tc=25°C 10 → Forward Characteristics of Reverse Diode VGS=f(Qg): ID=50A; Tc=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source-On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch): ID=25A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] →