ETC 2SK3270-01MR

2SK3270-01
N-channel MOS-FET
Trench Gate MOSFET
60V
> Features
-
6,5mΩ ±80A
135W
> Outline Drawing
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
Avalanche Rated
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
ID
I D(puls)
VGS
E AV
PD
T ch
T stg
Rating
60
±80
±320
+30 / -20
613
135
150
-55 ~ +150
Unit
V
A
A
V
mJ*
W
°C
°C
* L=0,13mH, VCC=24V
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
BV DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
I
R
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
g
C
C
C
t
t
t
t
I
V
t
Q
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
DS(on)
Test conditions
ID=1mA
VGS=0V
ID=10mA
VDS=VGS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±30V
VDS=0V
ID=40A
VGS=10V
fs
ID=40A
GSS
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
VDS=10V
VDS=25V
VGS=0V
f=1MHz
VCC=30V
VGS=10V
ID=80A
RGS=10 Ω
Tch=25°C
L = 100µH
IF=80A VGS=0V Tch=25°C
IF=50A VGS=0V
-dIF/dt=100A/µs Tch=25°C
Test conditions
channel to ambient
channel to case
Min.
60
2,5
25
Typ.
3,0
1,0
10,0
10
5,0
Max.
3,5
100,0
500,0
100
6,5
50
9000
1250
700
50
200
150
135
80
1,0
85
0,25
Min.
Typ.
1,5
Max.
75,0
0,926
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
Unit
V
V
µA
µA
nA
mΩ
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Unit
°C/W
°C/W
2SK3270-01
N-channel MOS-FET
60V
6,5mΩ
±80A
Trench Gate MOSFET
135W
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
ID=f(VDS); 80µs pulse test; TC=25°C
ID [A]
↑
RDS(ON) [mΩ]
1
VDS [V]
2
→
Tch [°C]
→
VGS [V]
→
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
5
→
ID [A]
Typical Capacitances vs. VDS
VGS(th) [V]
↑
gfs [S]
↑
4
Tch [°C]
Typical Gate Charge Characteristic
IF=f(VSD); 80µs pulse test; Tch=25°C
↑
VDS [V]
↑
7
VDS [V]
8
→
Qg [nC]
Maximum Avalanche Energy vs. starting Tch
↑
↑
→
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
12
ID [A]
starting Tch [°C]
→
→
↑
Zth(ch-c) [K/W]
ID=f(VDS): D=0,01, Tc=25°C
↑
EAV [mJ]
9
Safe Operation Area
EAV=f(starting Tch): VCC=24V; IAV ≤ 80A
10
→
Forward Characteristics of Reverse Diode
VGS=f(Qg); ID=80A; Tch=25°C
IF [A]
C=f(VDS); VGS=0V; f=1MHz
6
→
VGS [V]
ID [A]
↑
3
Typical Drain-Source On-State-Resistance vs. ID
↑
RDS(ON) [mΩ]
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
C [F]
Typical Transfer Characteristics
RDS(on) = f(Tch); ID=25A; VGS=10V
VDS [V]
→
This specification is subject to change without notice!
t [s]
→