2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) VGS E AV PD T ch T stg Rating 60 ±80 ±320 +30 / -20 613 135 150 -55 ~ +150 Unit V A A V mJ* W °C °C * L=0,13mH, VCC=24V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol BV DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance DS(on) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=40A VGS=10V fs ID=40A GSS iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) VDS=10V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=80A RGS=10 Ω Tch=25°C L = 100µH IF=80A VGS=0V Tch=25°C IF=50A VGS=0V -dIF/dt=100A/µs Tch=25°C Test conditions channel to ambient channel to case Min. 60 2,5 25 Typ. 3,0 1,0 10,0 10 5,0 Max. 3,5 100,0 500,0 100 6,5 50 9000 1250 700 50 200 150 135 80 1,0 85 0,25 Min. Typ. 1,5 Max. 75,0 0,926 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com Unit V V µA µA nA mΩ S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK3270-01 N-channel MOS-FET 60V 6,5mΩ ±80A Trench Gate MOSFET 135W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [mΩ] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; Tch=25°C ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Maximum Avalanche Energy vs. starting Tch ↑ ↑ → VSD [V] Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] starting Tch [°C] → → ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ EAV [mJ] 9 Safe Operation Area EAV=f(starting Tch): VCC=24V; IAV ≤ 80A 10 → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=80A; Tch=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source On-State-Resistance vs. ID ↑ RDS(ON) [mΩ] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch); ID=25A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] →