2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating Unit V A A A V W °C °C 60 20 80 20 ±20 35 150 -55 ~ +150 - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance g C C Reverse Transfer Capacitance C Turn-On-Time ton (ton=td(on)+tr) t t t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance t V t GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V Min. 60 1,0 6 Typ. 1,5 Max. Unit V V µA mA µA 0,09 2,0 500 1,0 10 0,11 0,055 0,07 12 600 260 900 390 Ω S pF pF Ω f=1MHz 150 240 pF VCC=30V ID=20A VGS=10V 7 30 100 11 45 150 ns ns ns RGS=25 Ω IF=2xIDR VGS=0V Tch=25°C 70 1,45 110 2,18 ns V IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 90 130 ns Test conditions channel to air channel to case Min. FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. Max. 62,5 3,57 Unit °C/W °C/W 2SK1822-01M N-channel MOS-FET 60V 0,07Ω 20A FAP-IIIA Series 35W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → This specification is subject to change without notice! t [s] →