2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 50 200 ±20 125 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I I I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=50A VGS=10V RGS=25Ω Tch=25°C L = 100µH Min. 60 1,0 20 Typ. 1,5 0,019 0,013 40 2600 1000 630 20 210 520 420 DRM rr rr Symbol R th(ch-a) R th(ch-c) IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Test conditions channel to air channel to case 2,0 500 1,0 10,0 0,027 0,017 3900 1500 950 30 320 780 630 50 DR SD Max. 1,45 85 0,16 Min. Typ. Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com 50 200 2,18 120 Max. 35 1,0 Unit V V µA mA µA Ω Ω S pF pF pF ns ns ns ns A A A V ns µC Unit °C/W °C/W 2SK1969-01 N-channel MOS-FET 60V 0,017Ω 50A FAP-IIIA Series 125W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → This specification is subject to change without notice! t [s] →