FUJI 2SK2645-01MR

2SK2645-01MR
N-channel MOS-FET
FAP-IIS Series
600V
> Features
-
1,2Ω
9A
50W
> Outline Drawing
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Repetitive Avalanche Rated
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum RatingsT(
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (Tch ≤ 150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (TC=25°C),
Symbol
V DS
ID
I D(puls)
V GS
I AR
E AS
PD
T ch
T stg
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Rating
600
9
32
±30
9
71,9
50
150
-55 ~ +150
Unit
V
A
A
V
A
mJ
W
°C
°C
unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Turn-Off-Time toff (ton=td(off)+tf)
> Equivalent Circuit
C=25°C), unless otherwise specified
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS =0V
ID=1mA
VDS= VGS
VDS=600V
Tch =25°C
VGS=0V
Tch=125°C
VGS =±30V
VDS=0V
ID=4A
VGS =10V
ID=4A
VDS=25V
VDS=25V
VGS =0V
f=1MHz
VCC=300V
ID=9A
VGS=10V
RGS=10 Ω
Tch =25°C
L = 100µH
IF=2xI DR VGS =0V T ch =25°C
IF=IDR V GS =0V
-dI F/dt=100A/µs T ch =25°C
Min.
600
3,5
Test conditions
channel to air
channel to case
Min.
Typ.
4,0
10
0,2
10
1,0
5
900
150
70
25
70
60
35
2,5
Max.
4,5
500
1,0
100
1,2
1400
230
110
40
110
90
60
9
1,0
550
7,0
Typ.
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
1,5
Max.
62,5
2,5
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Unit
°C/W
°C/W
2SK2645-01MR
N-channel MOS-FET
600V
1,2Ω
9A
FAP-IIS Series
50W
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
ID=f(VDS); 80µs pulse test; TC=25°C
ID [A]
↑
RDS(ON) [Ω]
1
VDS [V]
2
→
Tch [°C]
→
VGS [V]
→
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
5
→
ID [A]
Typical Capacitances vs. VDS
VGS(th) [V]
↑
gfs [S]
↑
4
Tch [°C]
Typical Gate Charge Characteristic
IF=f(VSD); 80µs pulse test; VGS=0V
↑
VDS [V]
↑
7
VDS [V]
8
→
Qg [nC]
Avalanche Energy Derating
↑
↑
9
→
VSD [V]
↑
Zth(ch-c) [K/W]
ID=f(VDS): D=0,01, Tc=25°C
↑
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
12
ID [A]
Eas [mJ]
Starting Tch [°C]
→
→
Safe Operation Area
Eas=f(starting Tch); VCC=60V; IAV=9A
10
→
Forward Characteristics of Reverse Diode
VGS=f(Qg); ID=9A; Tc=25°C
IF [A]
C=f(VDS); VGS=0V; f=1MHz
6
→
VGS [V]
ID [A]
↑
3
Typical Drain-Source On-State-Resistance vs. ID
↑
RDS(ON) [Ω]
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
C [F]
Typical Transfer Characteristics
RDS(on) = f(Tch); ID=4A; VGS=10V
VDS [V]
→
This specification is subject to change without notice!
t [s]
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