2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 200 ±20 ±80 ±20 355 2 45 +150 -55 to +150 Unit V A A V mJ W W °C °C Drain(D) Gate(G) Source(S) *1 L=1.6mH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=200V VGS=0V VGS=±20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS =25V VGS =0V f=1MHz VCC=100V ID=20A VGS=10V Min. 200 1.0 Tch=25°C Tch=125°C 9.0 RGS=10 Ω L=100µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C Typ. Max. 1.5 10 0.2 10 110 85 19.0 1700 290 185 10 45 225 120 2.0 500 0.5 100 150 100 V V µA mA nA mΩ S 2550 435 280 15 70 340 180 20 0.93 250 2.90 Units 1.40 pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.78 62.5 Units °C/W °C/W 1 2SK3262-01MR FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) Safe operating area ID=f(VDS):D=0.01,Tc=25°C 50 10 2 t= 40 1µs D.C. 10 10µs 1 100µs PD [W] 30 ID [A] 1ms 20 10 10ms 0 t 10 D= t T 100ms T 0 0 50 100 10 150 -1 0 10 10 1 10 Tc [°C] 2 10 3 VDS [V] Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 50 100 VGS=20V 15V 10V 40 5.0V 4.5V 4.0V 10 ID [A] ID [A] 30 3.5V 20 1 3.0V 10 0 0 1 2 3 4 5 0.1 6 0 1 2 4 5 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 10 3 VGS [V] VDS [V] 0.22 2 VGS= 3.0V 0.20 3.5V 0.18 0.16 10 4.0V 1 0.14 gfs [s] RDS(on) [Ω ] 4.5V 5.0V 0.12 10V 15V 20V 0.10 0.08 10 0 0.06 0.04 0.02 0.00 -1 10 10-1 10 0 10 ID [A] 1 10 2 0 10 20 30 40 50 60 ID [A] 2 2SK3262-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V 300 3.0 250 2.5 200 2.0 VGS(th) [V] RDS(on)[m Ω] max. max. 150 typ. 1.5 typ. 1.0 100 min. 0.5 50 0 -50 -25 0 25 50 75 100 125 0.0 150 -50 -25 0 25 Tch [°C] 50 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25°C Typical capacitances C=f(VDS):VGS=0V,f=1MHz 200 100n 20 180 18 VDS VGS 160 16 140 VDS [V] C [F] 40V 100 1n 12 100V 10 80 8 60 6 40 4 20 2 VGS [V] 120 Ciss 14 Vcc=160V 10n Coss Crss 0 100p 10 -2 10 -1 10 0 10 1 10 2 0 0 20 40 60 80 100 120 140 160 180 200 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80µs pulse test,Tch=25°C Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive 25 40 20 30 15 -ID [A] I(AV) [A] 50 10 20 10 0 0.0 5 10V VGS=0V 0 0.2 0.4 0.6 VSD [V] 0.8 1.0 1.2 0 25 50 75 100 125 150 Starting Tch [°C] 3 2SK3262-01MR FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T Maximum Avalanche energy vs. starting Tch <=20A,Non-Repetitive Eas=f(starting Tch):Vcc=24V,I AV 1 500 10 400 10 D=0.5 Zth(ch-c) [°C/W] 0 Eas [mJ] 300 200 0.2 0.1 0.05 -1 10 0.02 0.01 t -2 10 0 D= t T T 100 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 t [sec] 0 0 25 50 75 100 125 150 Starting Tch [°C] 4