FUJI FAP-450

FAP-450
N-channel MOS-FET
FAP-IIS Series
500V
> Features
-
0,38Ω
14A
190W
> Outline Drawing
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Repetitive Avalanche Rated
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Avalanche Current
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
Rating
Unit
V DS
500
V
ID
14
A
I D(puls)
56
A
V GS
±30
V
I AR
A
14*2
*1
E AS
mJ
760
PD
190
W
T ch
150
°C
T stg
-55 ~ +150
°C
*1) VCC = 50V; L = 7mH; IAS = 14A; RG = 50 Ω; Starting Tch = 25°C (See Fig. 1 & 2)
*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Symbol
BV DSS
V GS(th)
I DSS
I
R
g
C
C
C
t
t
t
t
I
C
C
C
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
iss
oss
rss
SD
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS=0V
ID=250µA
VDS=VGS
VDS=500V
Tch=25°C
Tch=125°C
VGS=0V
VGS=±30V
VDS=0V
ID=8A
VGS=10V
ID=8A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
VGS=10V
RG = 6,1W
RD = 20Ω
Tch=25°C
L = 100µH
VCC=400V
VGS=10V
ID = 14A
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
500
3,0
Test conditions
channel to ambient
channel to case
Min.
7
Typ.
3,0
10
0,32
14
2200
330
140
18
70
130
70
Max.
4,0
25
1,0
100
0,38
4
1,0
700
9,0
Typ.
170
20
90
1,5
Max.
35
0,65
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
nC
nC
nC
V
ns
µC
Unit
°C/W
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
FAP-450
N-channel MOS-FET
500V
0,38Ω
14A
FAP-IIS Series
190W
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
ID=f(VDS); 80µs pulse test; TC=25°C
ID [A]
2
→
Tch [°C]
3
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=250µA; VDS=VGS
4
↑
ID [A]
VGS(th) [V]
↑
gfs [S]
5
→
ID [A]
→
Tch [°C]
Max. Avalanche Energy Derating
vs. Starting Channel Temperature
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
IF=f(VSD); 80µs pulse test; VGS=0V
↑
Eas [mJ]
↑
7
VDS [V]
→
8
Starting Tch [°C]
Allowable Power Dissipation vs. TC
→
Forward Characteristics of Reverse Diode
Eas=f(starting Tch): Peak IL = 14A; VCC=50V
↑
6
IF [A]
RDS(ON) [Ω]
↑
RDS(ON) [Ω]
1
↑
C [F]
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
↑
ID [A]
↑
VDS [V]
Typical Transfer Characteristics
RDS(on) = f(Tch); ID=8A; VGS=10V; 80µs pulse test
9
→
VSD [V]
→
Safe Operation Area
PD=f(Tc)
ID=f(VDS): Single Pulse, Tc=25°C
Transient Thermal impedance
Zth(ch-c=f(t); D=t/T
↑
↑
12
Tc [°C]
→
Zthch=f(t) parameter:D=t/T
Zth(ch-c) [K/W]
ID [A]
10
PD [W]
↑
VDS [V]
→
This specification is subject to change without notice!
t [s]
→
FAP-450
N-channel MOS-FET
500V
0,38Ω
14A
FAP-IIS Series
190W
> Characteristics
Drain Current Derating
Typical Gate Charge
ID = f(TC)
VGS = f(Qg); ID=14A
VDS [V]
↑
ID [A]
↑
TC [°C]
→
Qg [nC]
→
Fig. 1: Test Circuit
Fig. 2: Operating Waveforms
This -specification
is subject
change without
notice!381-9991 (fax)
P.O. Box 702708
Dallas, TX
- (972)to733-1700
- (972)