FUJI 6MBP50RA120

6MBP50RA120
1200V / 50A 6 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
Collector power dissipation
DC
1ms
DC
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Min.
Max.
0
0
200
0
0
0
0
-40
-20
-
900
1000
800
1200
50
100
50
357
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
Condtion
VCE=1200V input terminal open
Ic=50A
-Ic=50A
Min.
Typ.
–
–
–
–
–
–
Max.
Unit
1.0
2.6
3.0
mA
V
V
6MBP50RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Symbol
Power supply current of P-line side Pre-driver(one unit) Iccp
ICCN
Power supply current of N-line side three Pre-driver
Vin(th)
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Tj=25°C
Fig.3
Min.
Typ.
Max.
3
18
10
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
110
125
20
150
20
75
10
11.0
12.5
0.2
1.5
2
12
1425
1500
1575
Unit
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
*7 Switching frequency of IPM
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Symbol Condition
ton
toff
trr
Switching time (FWD)
Min.
IC=50A, VDC=600V
Typ.
Max.
Unit
-
-
µs
µs
µs
0.3
-
IF=50A, VDC=600V
3.6
0.4
Thermal characteristics(Tc=25°C)
Item
Junction to Case thermal resistance
INV
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
0.05
Max.
0.35
0.85
-
Unit
°C/W
°C/W
°C/W
Typ.
15
-
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
VDC
VCC
fSW
-
Min.
200
13.5
1
2.5
2.5
6MBP50RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
6MBP50RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
In p u t s ig n a l th re sh o ld vo lta g e
vs . P o w e r su p p ly vo lta g e
P o w e r s u p p ly cu rre n t v s . S w itch in g fre q u e n c y
T j= 1 0 0 °C
2 .5
40
N -sid e
V cc= 15V
30
V cc= 13V
25
20
15
V cc= 17V
V cc= 15V
10
2
: V in(on ),V in (o ff) (V )
35
Inp ut sign al th re sh old vo ltag e
V cc= 17V
P -sid e
P o w e r s u p ply c urre n t : Ic c (m A )
T j= 2 5 ° C
T j= 1 2 5 °C
} V in(off)
1 .5
} V in (on)
1
0 .5
V cc= 13V
5
0
0
5
10
15
20
0
25
12
S w itc hing fre qu e nc y : fs w (k H z)
13
14
15
16
17
18
P o w er su pply volta ge : V cc (V )
Under voltage vs. Junction temperature
U n d e r vo lta g e h y ste ris is v s. J n c tio n te m p e ra tu re
14
U nd er vo ltage h yste risis : V H (V)
1
Under voltage : VUVT (V)
12
10
8
6
4
0.8
0.6
0.4
0.2
2
0
20
40
60
80
100
120
0
140
20
40
Junction temperature : Tj (°C)
2.5
T j=12 5°C
2
T j=2 5°C
1.5
1
0.5
13
14
15
16
10 0
12 0
14 0
17
P ow e r s up p ly v oltag e : V c c (V )
18
2 00
TjOH
O H h y s te r is is : Tc H,TjH ( °C)
O v e r he a tin g p r ote c tio n : Tc OH,TjO H ( °C)
A la rm h o ld tim e : tA L M (m S e c )
3
12
80
O ve r h e a tin g c h a ra cte ris tics
Tc OH ,T jO H ,TcH ,T jH vs . Vcc
A la rm h o ld tim e vs . P o w e r s u p p ly vo lta g e
0
60
Jun ction te m p era tu re : T j (°C )
1 50
Tc OH
1 00
50
Tc H,TjH
0
12
13
14
15
16
17
Po w e r s u p ply v o ltag e : V c c ( V )
18
6MBP50RA120
IGBT-IPM
Inverter
C ollecto r current vs. C ollector-E m itte r volta ge
Tj= 1 25°C
C o lle c to r c u rre n t v s . C o lle c to r-E m itte r vo lta g e
Tj= 2 5 °C
V cc = 1 5V
80
V cc = 1 7V
V cc = 1 3V
60
50
40
30
50
40
30
20
10
10
0
0
0 .5
1
1 .5
2
2 .5
3
V cc= 13V
60
20
0
V cc= 17V
70
C ollector C urrent : Ic (A )
C ollec to r C u rre nt : Ic (A )
70
V cc= 15V
80
0
0.5
C olle c to r-E m itte r v o lta g e : V c e (V )
1 000 0
2
2.5
3
S w itch in g tim e : ton ,to ff,tf (n S e c)
1 000 0
to ff
to n
100 0
tf
10 0
to ff
to n
100 0
tf
10 0
10
10
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
C o lle ctor cu rre nt : Ic (A )
C o llec tor c u rre nt : Ic (A )
R e ve rse re co ve ry ch a ra cte ristics
trr,Irr vs. IF
F o rw a rd c u rre n t vs. F o rwa rd vo lta g e
100 0
80
R e v ers e rec ov e ry c urre n t : Irr(A )
R ev e rs e re c o v ery tim e : trr(n S e c )
2 5°C
12 5°C
70
F orwa rd C u rre n t : If (A )
1.5
S witch in g tim e vs . Co lle cto r c u rre n t
E d c =6 0 0 V ,V cc= 1 5 V ,Tj= 1 2 5 °C
S w itc h in g tim e vs . C o lle c to r c u rre n t
E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 2 5 °C
S w itc hin g tim e : ton ,to ff,tf (n S e c )
1
C ollector-Em itter voltage : Vce (V )
60
50
40
30
20
trr12 5°C
trr2 5°C
10 0
Irr12 5°C
10
Irr2 5°C
0
0
0.5
1
1.5
2
Fo rwa rd vo lta g e : V f (V )
2.5
3
10
0
10
20
30
40
50
F o rw ard c u rre nt : IF (A )
60
70
80
6MBP50RA120
IGBT-IPM
R e ve rse d b ia s e d s a fe o p e ra tin g a re a
V cc = 1 5 V ,T j <= 1 2 5 °C
T ra nsie nt the rm a l re sistance
FW D
70 0
60 0
IG B T
C o lle c to r c u rre nt : Ic (A )
T h e rm a l re sista n ce : R th (j-c ) (°C /W )
1
0 .1
50 0
40 0
SC SOA
(no n-rep etitive pulse)
30 0
20 0
10 0
0.01
0
0 .0 01
0.01
0 .1
RB SOA
(R ep etitive pulse)
0
20 0
1
40 0
60 0
80 0
100 0
120 0
140 0
C o lle cto r-E m itte r v o lta g e : V c e (V )
P u lse w idth :P w (se c)
P o we r d e ratin g fo r IG B T
(p e r d evice )
P o w e r d e ra tin g fo r F W D
(p e r d e vic e )
150
C o lle c te r P o w er D is s ip ation : P c (W )
C o lle cte r Po w er D iss ip ation : P c (W )
40 0
35 0
30 0
25 0
20 0
15 0
10 0
125
100
75
50
25
50
0
0
0
20
40
60
80
10 0
12 0
14 0
0
16 0
20
C a se T e m p erature : T c (°C )
60
80
100
120
140
160
C a s e T e m p era ture : T c (°C )
S w itch in g L os s vs. C olle c to r C u rre n t
E d c =6 0 0V ,V cc= 1 5 V ,Tj= 2 5°C
S w itc h in g L o s s v s. C o lle c to r C u rre n t
E d c = 6 0 0 V ,V c c= 1 5 V ,Tj= 1 2 5 °C
25
25
S w itc h in g lo ss : E o n,E o ff,E rr (m J /c y c le)
S w itc h in g lo s s : E o n,E o ff,E rr (m J /c y c le)
40
20
15
Eo n
10
Eo ff
5
E rr
0
15
10
10
20
30
40
50
C o lle c tor c u rre nt : Ic (A )
60
70
80
E o ff
5
0
0
Eo n
20
E rr
0
10
20
30
40
50
60
C o lle c tor cu rre nt : Ic (A )
70
80
6MBP50RA120
IGBT-IPM
O ver curre nt p ro te ction vs. Ju nctio n te m peratu re
Vcc=15 V
O ve r cu rre nt p rotec tio n level : Ioc(A )
2 00
1 50
1 00
50
0
0
20
40
60
80
1 00
Ju n ction te m p e ra tu re : T j(°C )
1 20
1 40