6MBP50RA120 1200V / 50A 6 in one-package IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Collector power dissipation DC 1ms DC One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 900 1000 800 1200 50 100 50 357 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V A A A W °C V V mA V mA °C °C kV N·m N·m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item INV Symbol Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF Condtion VCE=1200V input terminal open Ic=50A -Ic=50A Min. Typ. – – – – – – Max. Unit 1.0 2.6 3.0 mA V V 6MBP50RA120 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Symbol Power supply current of P-line side Pre-driver(one unit) Iccp ICCN Power supply current of N-line side three Pre-driver Vin(th) Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM Condition fsw=0 to 15kHz Tc=-20 to 100°C *7 fsw=0 to 15kHz Tc=-20 to 100°C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature surface of IGBT chips Tj=125°C Tj=25°C Fig.2 Tj=25°C Fig.3 Min. Typ. Max. 3 18 10 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 110 125 20 150 20 75 10 11.0 12.5 0.2 1.5 2 12 1425 1500 1575 Unit mA mA V V V °C °C °C °C A µs V V ms µs ohm *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=50A, VDC=600V Typ. Max. Unit - - µs µs µs 0.3 - IF=50A, VDC=600V 3.6 0.4 Thermal characteristics(Tc=25°C) Item Junction to Case thermal resistance INV IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.35 0.85 - Unit °C/W °C/W °C/W Typ. 15 - Max. 800 16.5 20 3.0 3.0 Unit V V kHz N·m N·m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - Min. 200 13.5 1 2.5 2.5 6MBP50RA120 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 6MBP50RA120 IGBT-IPM Characteristics (Representative) Control Circuit In p u t s ig n a l th re sh o ld vo lta g e vs . P o w e r su p p ly vo lta g e P o w e r s u p p ly cu rre n t v s . S w itch in g fre q u e n c y T j= 1 0 0 °C 2 .5 40 N -sid e V cc= 15V 30 V cc= 13V 25 20 15 V cc= 17V V cc= 15V 10 2 : V in(on ),V in (o ff) (V ) 35 Inp ut sign al th re sh old vo ltag e V cc= 17V P -sid e P o w e r s u p ply c urre n t : Ic c (m A ) T j= 2 5 ° C T j= 1 2 5 °C } V in(off) 1 .5 } V in (on) 1 0 .5 V cc= 13V 5 0 0 5 10 15 20 0 25 12 S w itc hing fre qu e nc y : fs w (k H z) 13 14 15 16 17 18 P o w er su pply volta ge : V cc (V ) Under voltage vs. Junction temperature U n d e r vo lta g e h y ste ris is v s. J n c tio n te m p e ra tu re 14 U nd er vo ltage h yste risis : V H (V) 1 Under voltage : VUVT (V) 12 10 8 6 4 0.8 0.6 0.4 0.2 2 0 20 40 60 80 100 120 0 140 20 40 Junction temperature : Tj (°C) 2.5 T j=12 5°C 2 T j=2 5°C 1.5 1 0.5 13 14 15 16 10 0 12 0 14 0 17 P ow e r s up p ly v oltag e : V c c (V ) 18 2 00 TjOH O H h y s te r is is : Tc H,TjH ( °C) O v e r he a tin g p r ote c tio n : Tc OH,TjO H ( °C) A la rm h o ld tim e : tA L M (m S e c ) 3 12 80 O ve r h e a tin g c h a ra cte ris tics Tc OH ,T jO H ,TcH ,T jH vs . Vcc A la rm h o ld tim e vs . P o w e r s u p p ly vo lta g e 0 60 Jun ction te m p era tu re : T j (°C ) 1 50 Tc OH 1 00 50 Tc H,TjH 0 12 13 14 15 16 17 Po w e r s u p ply v o ltag e : V c c ( V ) 18 6MBP50RA120 IGBT-IPM Inverter C ollecto r current vs. C ollector-E m itte r volta ge Tj= 1 25°C C o lle c to r c u rre n t v s . C o lle c to r-E m itte r vo lta g e Tj= 2 5 °C V cc = 1 5V 80 V cc = 1 7V V cc = 1 3V 60 50 40 30 50 40 30 20 10 10 0 0 0 .5 1 1 .5 2 2 .5 3 V cc= 13V 60 20 0 V cc= 17V 70 C ollector C urrent : Ic (A ) C ollec to r C u rre nt : Ic (A ) 70 V cc= 15V 80 0 0.5 C olle c to r-E m itte r v o lta g e : V c e (V ) 1 000 0 2 2.5 3 S w itch in g tim e : ton ,to ff,tf (n S e c) 1 000 0 to ff to n 100 0 tf 10 0 to ff to n 100 0 tf 10 0 10 10 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 C o lle ctor cu rre nt : Ic (A ) C o llec tor c u rre nt : Ic (A ) R e ve rse re co ve ry ch a ra cte ristics trr,Irr vs. IF F o rw a rd c u rre n t vs. F o rwa rd vo lta g e 100 0 80 R e v ers e rec ov e ry c urre n t : Irr(A ) R ev e rs e re c o v ery tim e : trr(n S e c ) 2 5°C 12 5°C 70 F orwa rd C u rre n t : If (A ) 1.5 S witch in g tim e vs . Co lle cto r c u rre n t E d c =6 0 0 V ,V cc= 1 5 V ,Tj= 1 2 5 °C S w itc h in g tim e vs . C o lle c to r c u rre n t E d c = 6 0 0 V ,V c c = 1 5 V ,T j= 2 5 °C S w itc hin g tim e : ton ,to ff,tf (n S e c ) 1 C ollector-Em itter voltage : Vce (V ) 60 50 40 30 20 trr12 5°C trr2 5°C 10 0 Irr12 5°C 10 Irr2 5°C 0 0 0.5 1 1.5 2 Fo rwa rd vo lta g e : V f (V ) 2.5 3 10 0 10 20 30 40 50 F o rw ard c u rre nt : IF (A ) 60 70 80 6MBP50RA120 IGBT-IPM R e ve rse d b ia s e d s a fe o p e ra tin g a re a V cc = 1 5 V ,T j <= 1 2 5 °C T ra nsie nt the rm a l re sistance FW D 70 0 60 0 IG B T C o lle c to r c u rre nt : Ic (A ) T h e rm a l re sista n ce : R th (j-c ) (°C /W ) 1 0 .1 50 0 40 0 SC SOA (no n-rep etitive pulse) 30 0 20 0 10 0 0.01 0 0 .0 01 0.01 0 .1 RB SOA (R ep etitive pulse) 0 20 0 1 40 0 60 0 80 0 100 0 120 0 140 0 C o lle cto r-E m itte r v o lta g e : V c e (V ) P u lse w idth :P w (se c) P o we r d e ratin g fo r IG B T (p e r d evice ) P o w e r d e ra tin g fo r F W D (p e r d e vic e ) 150 C o lle c te r P o w er D is s ip ation : P c (W ) C o lle cte r Po w er D iss ip ation : P c (W ) 40 0 35 0 30 0 25 0 20 0 15 0 10 0 125 100 75 50 25 50 0 0 0 20 40 60 80 10 0 12 0 14 0 0 16 0 20 C a se T e m p erature : T c (°C ) 60 80 100 120 140 160 C a s e T e m p era ture : T c (°C ) S w itch in g L os s vs. C olle c to r C u rre n t E d c =6 0 0V ,V cc= 1 5 V ,Tj= 2 5°C S w itc h in g L o s s v s. C o lle c to r C u rre n t E d c = 6 0 0 V ,V c c= 1 5 V ,Tj= 1 2 5 °C 25 25 S w itc h in g lo ss : E o n,E o ff,E rr (m J /c y c le) S w itc h in g lo s s : E o n,E o ff,E rr (m J /c y c le) 40 20 15 Eo n 10 Eo ff 5 E rr 0 15 10 10 20 30 40 50 C o lle c tor c u rre nt : Ic (A ) 60 70 80 E o ff 5 0 0 Eo n 20 E rr 0 10 20 30 40 50 60 C o lle c tor cu rre nt : Ic (A ) 70 80 6MBP50RA120 IGBT-IPM O ver curre nt p ro te ction vs. Ju nctio n te m peratu re Vcc=15 V O ve r cu rre nt p rotec tio n level : Ioc(A ) 2 00 1 50 1 00 50 0 0 20 40 60 80 1 00 Ju n ction te m p e ra tu re : T j(°C ) 1 20 1 40