IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Dynamic Brake Continuous Collector Current 1ms Forward Current of Diode One Transistor Collector Power Dissi. DB Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC *1 VIN *2 IIN VALM *3 IALM *4 Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 50 100 50 198 30 60 30 120 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W A W V mA V mA Fig. 1 °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV DB Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=50A -IC=50A VCE=600V, Input Terminal Open IC=30A -IC=30A Min. Typ. Max. 1.0 2.8 3.0 1.0 2.8 3.3 Units mA V V mA V V Min. 3 10 1.00 1.25 Typ. Max. 18 65 1.70 1.95 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Input Signal Threshold Voltage Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level DB Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis Symbols ICCP ICCN VIN(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 1.60 8.0 110 150 Tj=125°C Tj=125°C Tj=25°C 75 45 V 125 20 Surface Of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 A 10 2 1500 1575 12.5 µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=300V IF=50A, VDC=300V Min. 0.3 Typ. Max. Units 3.6 0.4 µs IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 • Thermal Characteristics Items Thermal Resistance n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection Symbols Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode DB IGBT With Thermal Compound Min. Typ. 0.05 Max. 0.63 1.33 1.04 Units °C/W IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 n Dynamic Brake Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 60 V CC =17V,15V, 13V [A] C [A] 40 Collector Current : I C V CC =17V,15V, 13V 50 50 Collector Current : I T j= 1 2 5 ° C 60 30 20 10 40 30 20 10 0 0 0 1 2 3 Collector-Emitter Voltage : V CE [V] 0 4 IGBT [A] [°C/W] 3 4 V C C =15V, T j<1 2 5 ° C 300 0 250 10 Collector Current : I C th(j-c) Thermal Resistance : R 2 Reverse Biased Safe Operating Area Transient Thermal Resistance 10 1 Collector-Emitter Voltage : V CE [V] -1 200 150 100 50 10 -2 10 -3 10 -2 10 -1 10 0 0 0 100 Pulse Width : P W [sec] 200 300 400 500 600 700 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT Over Current Protection vs. Junction Temperature (per device) 140 V cc= 1 5 V [A] 120 oc 100 Over Current Protection Level : I Collector Power Dissipation : P C [W] 120 80 60 40 20 0 0 20 40 60 80 100 120 140 160 100 80 60 40 20 0 0 Case Temperature : T C [°C] 20 40 60 80 100 Junction Temperature: T j [°C] 120 140 IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency vs. Power Supply Voltage T j= 1 0 0 ° C 2,5 T j= 2 5 ° C T j= 1 2 5 ° C V CC= 1 3 V Power Supply Current : I 20 15 10 V C C= 1 7 V P-Side V C C= 1 5 V 5 2,0 : V in(on) , V in(off) [V] N-Side Input Signal Threshold Voltage V CC= 1 5 V CC [mA] V CC= 1 7 V 25 V in(off) 1,5 V in(on) 1,0 0,5 V C C= 1 3 V 0 5 10 15 20 0,0 12 25 13 Switching Frequency : fsw [kHz] 14 H 8 19 6 4 40 60 80 100 120 0,6 0,4 0,2 0,0 20 140 40 60 80 100 120 140 Junction Temperature: T j [°C] Over Heating Characteristics Alarm Hold Time vs. Power Supply Voltage T cOH , T jOH , T cH, T jH vs. V cc 3,0 , T jOH [°C] cOH T j= 1 0 0 ° C 2,0 T j= 2 5 ° C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 , T jH [°C] cH 200 Over Heating Protection : T [ms] 18 0,8 Junction Temperature : T j [°C] ALM 17 [V] Under Voltage Hysterisis : V Under Voltage : V UV [V] 10 2 Alarm Hold Timen : t 16 1,0 12 0,0 12 15 Under Voltage Hysterisis vs. Junction Temperature Under Voltage vs. Junction Temperature 0 20 14 Power Supply Voltage : V cc [V] T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 n Inverter Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 100 V C C =17V,15V, 13V [A] C 60 40 20 60 40 20 0 0 1 2 3 0 4 1 2 3 Collector-Emitter Voltage : V CE [V] Switching Time vs. Collector Current Switching Time vs. Collector Current V D C= 3 0 0 V , V C C=15V, T j= 2 5 ° C V D C = 3 0 0 V , V C C = 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [ns] Collector-Emitter Voltage : V CE [V] ton toff 4 t off t on 1000 Switching Time : t on 1000 on , t r, t off , t f [ns] 0 Switching Time : t V C C =17V,15V, 13V 80 Collector Current : I Collector Current : I C [A] 80 T j= 1 2 5 ° C 100 tf 100 0 10 20 30 40 50 60 70 tf 100 80 0 10 Collector Current : I C [A] 20 30 40 50 60 70 80 Collector Current : I C [A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current t rr, I rr vs. I F 100 [A] t rr = 1 2 5 ° C 100 70 60 50 40 30 20 10 Reverse Recovery Time : t rr [ns] 80 25°C rr T j= 1 2 5 ° C Reverse Recovery Current : I Forward Current : I F [A] 90 t rr = 2 5 ° C I rr = 1 2 5 ° C I rr = 1 2 5 ° C 10 0 0 1 2 Forward Voltage : V F [V] 3 4 0 10 20 30 40 50 60 Forward Current : I F [A] 70 80 IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 Reverse Biased Safe Operating Area Transient Thermal Resistance V C C=15V, T j< 1 2 5 ° C Thermal Resistance : Rth(j-c) [°C/W] 500 1 400 C [A] 10 0 IGBT 10 10 300 Collector Current : I FWD 10 -1 200 100 0 -2 10 -3 10 -2 10 -1 10 0 0 100 Pulse Width : P W [sec] 200 [W] [W] Collector Power Dissipation : P 100 50 0 60 80 100 120 140 60 40 20 0 160 0 20 80 100 120 Switching Loss vs. Collector Current Switching Loss vs. Collector Current , E off , E rr [mJ/cycle] E on 4 3 2 1 E rr 0 20 30 40 50 60 Collector Current : I C [A] 70 80 140 160 70 80 V D C =300V, V C C =15V, T j = 1 2 5 ° C E on 6 5 4 E off on Switching Loss : E on E off 10 60 Case Temperature : T C (°C) 7 0 40 Case Temperature : T C (°C) V DC =300V, V CC =15V, T j= 2 5 ° C 5 , E off , E rr [mJ/cycle] 40 700 80 C C Collector Power Dissipation : P 150 20 600 (per device) 100 0 500 Power Derating For FWD (per device) 200 400 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT Switching Loss : E 300 3 2 E rr 1 0 0 10 20 30 40 50 60 7MBP 50RA-060 V cc = 1 5 V 120 oc [A] Over Current Protection vs. Junction Temperature Over Current Protection Level : I 100 80 60 40 20 0 0 20 40 60 80 100 Junction Temperature: T j [°C] 120 140 IGBT IPM 600V 6×50A+DB 7MBP 50RA-060 IGBT IPM 600V 6×50A+DB n Outline Drawing Weight: 440g Specification is subject to change without notice March 98 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com