7MBP25RJ120 1200V / 25A 7 in one-package IGBT IPM R-series 1200V class Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs. · Low power loss and soft switching. · High performance and high reliability IGBT with overheating protection. · Both P-side and N-side alarm output available. · Higher reliability because of a big decrease in number of parts in built-in control circuit. Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Brake Inverter DC 1ms DC Collector power dissipation One transistor *3 Collector current DC 1ms Forward Current of Diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Symbol Rating Min. Max. VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Viso 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 - 900 1000 800 1200 25 50 25 198 15 30 15 120 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C V N·m N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB. *3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/1.04=120W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. 7MBP25RJ120 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Brake Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Symbol ICES VCE(sat) Condition Min. ICES VCE(sat) VF VCE=1200V Vin terminal open. Ic=25A Terminal Chip -Ic=25A Terminal Chip VCE=1200V Vin terminal open. Ic=15A Terminal -Ic=15A Terminal ton toff trr VDC=600V,Tj=125°C IC=25A Fig.1, Fig.6 VDC=600V, IF=25A Fig.1, Fig.6 VF Typ. 0.3 - Max. 2.0 2.4 - Unit 1.0 2.6 3.0 1.0 2.6 3.3 3.6 0.3 mA V V mA V µs Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Symbol Iccp Input zener voltage Alarm signal hold time VZ tALM Limiting Resistor for Alarm RALM ICCN Vin(th) Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Unit mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH TcOH Condition Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. Typ. Max. 38 23 150 10 - 12 - A A µs µs °C - 20 - 125 °C °C - °C V V 110 VDC=0V, IC=0A CaseTemperature - TcH V UV VH 20 0.5 11.0 0.2 12.5 - Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *8 Inverter Brake IGBT FWD IGBT Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Min. Typ. Max. 0.63 1.33 1.04 Unit °C/W °C/W °C/W Max. Unit - *8 : (For 1 device, Case is under the device) Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 800 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 450 Max. - Unit g Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight Unit 7MBP25RJ120 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions ) on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc PP IPM IPM 20 k DC 15V VccU 20k DC 15V VinU SW1 P IPM DC 15V SW2 Earth GND GND N Ic AC200V V Vcc VinX DC 300V U GNDU 20k + + Vin HCPL 4504 CT L + W Figure 6. Switching Characteristics Test Circuit Icc A 4700p N Cooling Fin Vcc P Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7MBP25RJ120 IGBT-IPM Block diagram P VccU 4 VinU 3 Pre- Driver ALMU 2 RALM 1.5k Vz GNDU 1 VccV 8 VinV 7 U Pre - Driver ALMV 6 RALM 1.5k Vz GNDV 5 VccW 12 VinW 11 ALMW 10 V Pre - Driver RALM 1.5k Vz GNDW 9 Vcc 14 VinX 16 W Pre - Driver Vz GND VinY 13 17 Pre - Driver Vz VinZ Pre-drivers include following functions 18 1.Amplifier for driver 2.Short circuit protection Pre - Driver Vz B VinDB 15 ALM 19 3.Under voltage lockout circuit 4.Over current protection Pre - Driver RALM 1.5k 5.IGBT chip over heating protection Vz N Over heating protection circuit Outline drawings, mm 13.8 _0.3 + 109 _1 + 95 _0 . 3 + 66.44 3.22 +_ 0 . 3 10 10 6 +_ 0 . 1 5 _0.2 + 10 _0.2 + 6 +_ 0 . 1 5 12 _ 0 . 25 + 4- O /5 2 +_ 0 . 1 2 +_ 0 . 3 6 +_ 0 . 1 5 _0 . 2 + 1 10 P 20 +_ 1 +_ 0 . 3 88 74 20 B N U V 0.5 17 W 0.5 24 26 26 19- 0.5 2- O / 2.5 9 +0 . 6 31 - 0 . 3 +1 . 0 -0.3 22 17 17 +1 . 0 -0.2 8 22 +1 . 0 -0.3 12.5 7 6 - M5 Mass : 450g 7MBP25RJ120 IGBT-IPM Characteristics Control circuit characteristics (Respresentative) Input signal threshold voltage vs. P ower s upply voltage Power supply current vs. Switching fr eque ncy Tj=10 0 °C Tj= 125° C 2.5 30 V cc = 17V N-side V cc = 15V Input s ignal thres hold voltage 25 V cc = 13V 20 15 10 V cc = 17V V cc = 15V V cc = 13V 5 2 : Vin(on), Vin(off) (V) P -side Powe r supply current : Icc (mA) T j= 25 °C } Vin(off) 1.5 } Vin(on) 1 0.5 0 0 0 5 10 15 20 12 25 13 14 15 16 17 18 Po we r s up ply volta ge : Vc c ( V) Sw itc hing f req ue nc y : fs w (kHz) U nder voltage vs. Junction tempe ratur e U nde r voltage hysterisis vs. Jnction tempe ra tur e 14 1 Under voltage hy sterisi s : VH (V) Under voltag e : VUVT (V) 12 10 8 6 4 0 .8 0 .6 0 .4 0 .2 2 0 20 40 60 80 1 00 120 0 1 40 20 40 Junc tio n tem pe rat ure : Tj (°C) 80 1 00 120 1 40 Over heating c haracteris tic s TcOH ,TjOH ,TcH ,TjH vs. Vcc Alarm hold time vs. P ower supply voltage 3 2 00 2 .5 Tj= 125° C 2 Tj= 25°C 1 .5 1 0 .5 0 TjO H O H hysterisis : TcH,T jH (°C) O ver heating pro tection : T cO H,TjO H (°C) Alarm hold t ime : tALM (mSec) 60 Junc tion tem pe rat ure : Tj (°C) 1 50 T cO H 1 00 50 TcH,TjH 0 12 13 14 15 16 Po we r s up ply vo lta ge : Vc c ( V) 17 18 12 13 14 15 16 Po we r s up ply volta ge : Vc c ( V) 17 18 7MBP25RJ120 IGBT-IPM Main circuit characteristics (Respresentative) C ollector current vs. Collector-E mitte r voltage Tj=2 5°C ( C hip) 40 C ollector current vs. Collector-E mitte r voltage Tj=2 5°C ( Terminal) 40 V cc = 15V Vcc= 15 V Vcc= 17 V V cc= 17 V 35 35 V cc = 13V Co llecto r Cur rent : Ic (A) Co lle cto r Cur rent : Ic (A) V cc = 13V 30 25 20 15 30 25 20 15 10 10 5 5 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 C olle ct or- Emitt er voltage : V ce (V) C o lle ctor current vs. Colle ctor-Emitter voltage Tj=125 °C ( C hip) 40 1 1.5 2 40 V cc= 15 V Vcc= 15V Vcc= 17 V 35 V cc = 13V 30 25 20 15 Colle ct or Curre nt : I c ( A) 35 30 V cc = 13V 25 20 15 10 10 5 5 0 0 0 0 .5 1 1.5 2 2.5 3 0 0 .5 1 1.5 2 2.5 C olle ct or- Emitt er vo lta ge : V ce ( V) C olle ct or- Emitt er vo lta ge : V ce ( V) Fo rward curre nt vs. Fo rwar d voltage (C hip) Fo rward curre nt vs. Fo rwar d voltage (T ermina l) 40 3 40 1 25 °C 35 1 25 °C 35 25 °C 25° C 30 F or wa rd Current : I f ( A) F orw ard Current : If (A) 3 C o lle ctor current vs. Colle ctor-Emitter voltage Tj=12 5°C( T ermina l) V cc = 17V Colle ct or Curre nt : I c ( A) 2.5 C olle ct or- Emitt er voltage : V ce (V) 25 20 15 30 25 20 15 10 10 5 5 0 0 0 0 .5 1 1 .5 2 F or wa rd vo lta ge : V f ( V) 2 .5 3 0 0 .5 1 1 .5 2 F or wa rd vo lta ge : V f (V) 2 .5 3 7MBP25RJ120 IGBT-IPM Reversed bias ed safe operating area Vcc=15V, T j 125 °C Trans ient thermal resistance 35 0 30 0 FW D C ollector cu rren t : Ic (A) Therm al re sis tance : Rt h(j-c) (° C/ W) 10 1 IG BT 0 .1 25 0 20 0 S CS OA (no n-re petitive pu lse) 15 0 10 0 50 RB S O A (R e petitive pu lse) 0 0. 01 0 .001 0.01 0 .1 0 1 20 0 Power dera ting fo r IGB T (per device) 80 0 1 00 0 1 20 0 1400 Power derating for FW D (per device) 2 50 1 00 Co llecte r P ow er Diss ipatio n : Pc ( W ) Co llecte r P ow er Diss ipa tio n : Pc ( W) 600 C ollector-E m itter volta ge : V ce (V) P ulse width :P w (se c) 2 00 1 50 1 00 50 0 80 60 40 20 0 0 20 40 60 80 1 00 1 20 140 1 60 0 20 40 60 80 1 00 1 20 140 1 60 Case Tem perature : Tc (°C) Case Temper ature : Tc (°C) Switching L os s vs. C ollecto r C urre nt E dc =60 0V ,V cc =1 5V,Tj=12 5 °C Switching L os s vs. C ollec to r C urre nt Edc=600V,Vcc=15V,Tj=2 5 ° C 12 Sw itching loss : Eon,Eoff,Err (mJ /cycle) 12 S w itching lo ss : Eon,E of f,Err (mJ/c yc le) 40 0 10 8 Eon 6 4 Eo ff 2 Err Eon 10 8 6 Eo ff 4 E rr 2 0 0 0 5 10 15 20 25 Colle ctor current : Ic (A) 30 35 40 0 5 10 15 20 25 Colle ctor cur rent : Ic (A) 30 35 40 7MBP25RJ120 IGBT-IPM Over current pr otec tio n vs . J unction tempe ra tur e Vc c=15 V Reverse re co ve ry char acte ris tic s trr,Irr vs. IF 10 00 Reve rse recovery curre nt : Irr(A) Re ve rse re co ve ry tim e : tr r(nSe c) O ver curre nt pro tectio n level : Io c(A) 1 00 80 60 40 20 0 trr125°C trr25 °C 1 00 Irr125° C 10 Irr 25 °C 1 0 20 40 60 80 1 00 1 20 1 40 0 5 10 15 20 25 30 35 40 J unction tempera tur e : T j(°C) For ward current : I F(A) Switching time vs. C ollec tor c urrent Edc=6 00 V,Vcc=15V ,Tj=25 °C Switching time vs. C ollec tor c urrent Edc=600V,Vcc=15V,Tj=125 °C 1 00 00 Sw itching tim e : to n,toff,tf (nSec) Sw it ching tim e : to n, tof f,tf (nSe c) 1 00 00 to ff ton 10 00 tf 1 00 10 toff ton 10 00 tf 1 00 10 0 5 10 15 20 25 C ollect or curre nt : Ic ( A) 30 35 40 0 5 10 15 20 25 30 C ollect or curre nt : Ic (A) 35 40 7MBP25RJ120 IGBT-IPM Dynamic Brake Characteristics (Representative) C ollector curr ent vs. Collector -E mitte r voltage Tj=125 °C C olle ctor curr ent vs. Colle ctor -E mitte r voltage T j=2 5° C 25 25 V cc = 15V Vcc= 15 V V cc = 17V V cc = 17V Co lle cto r Curre nt : Ic ( A) Co lle cto r Cur rent : Ic (A) 20 Vcc= 13 V 15 10 V cc = 13V 15 10 5 5 0 0 0 0 .5 1 1 .5 2 2.5 0 3 0 .5 1 .5 2 2 .5 C ollector -Emit ter vo lta ge : Vce (V) Tran sient therm al resista nce Revers ed bias ed safe oper atin g area Vc c=15V,Tj 125 ° C 3 21 0 IG B T 1 0 .1 Collector current : Ic (A) 18 0 15 0 12 0 SC S O A (no n-re peti tive pu lse) 90 60 30 0.01 RBSOA (Re peti tive pu lse) 0 0 .001 0.0 1 0 .1 1 0 20 0 40 0 600 80 0 1 00 0 1 20 0 140 0 C ollector-E m itte r volta ge : V ce (V) P ulse width :P w (sec) Power der ating fo r IGBT (per device) Over current pr otec tio n vs . J unction tempe ra tur e Vc c=15 V 1 40 60 1 20 Over curre nt pr ote ct ion level : I oc(A) Co llec te r P ow er Diss ipa tio n : Pc (W ) 1 C ollector -Emit ter vo lta ge : V ce ( V) 10 T he rmal resistance : Rth(j-c) (°C/W ) 20 1 00 80 60 40 20 0 50 40 30 20 10 0 0 20 40 60 80 1 00 1 20 Ca se Temper ature : Tc (°C) 140 1 60 0 20 40 60 80 1 00 Junction temperature : Tj(°C) 1 20 1 40