FUJI 6MBP150TEA060

6MBP150TEA060
600V / 150A 6 in one-package
Econo IPM series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
Inverter
DC
1ms
Duty=68.2% *2
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
Symbol
Rating
Min.
Max.
VDC
VDC(surge)
V SC
VCES
IC
ICP
-IC
PC
V CC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
0
0
200
0
-0.5
-0.5
-0.5
-20
-40
-
450
500
400
600
150
300
150
431
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
Unit
V
V
V
V
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6) x 100=68.2%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.
6MBP150TEA060
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Inverter
Item
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
Symbol
ICES
VCE(sat)
VF
ton
toff
trr
PAV
Condition
Min.
Typ.
Max.
Unit
VCE=600V Vin terminal open.
Ic=150A
Terminal
Chip
-Ic=150A
Terminal
Chip
VDC=300V,Tj=125°C
1.2
IC=150A Fig.1, Fig.6
VDC=300V, IC=150A Fig.1, Fig.6
Internal wiring inductance=50nH
170
Main circuit wiring inductace=54nH
1.8
1.6
-
1.0
2.3
2.6
3.6
0.3
-
mA
V
V
µs
mJ
Control circuit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Item
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Alarm signal hold time
VZ
tALM
Current limit resistor
RALM
Condition
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Min.
Typ.
Max.
18
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
1.1
2.0
4.0
1425
1500
1575
Unit
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
IOC
tDOC
tSC
TjOH
TjH
V UV
VH
Condition
Min.
225
150
11.0
0.2
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
Typ.
5
20
0.5
Max.
- 8
- 12.5
-
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance *10
Inverter
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
-
Typ.
0.05
Max.
0.29
0.47
Unit
°C/W
°C/W
- °C/W
Min.
Typ.
Max.
Unit
*10 : (For 1 device, Case is under the device)
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
±2.0
-
-
kV
±5.0
-
-
kV
Symbol
V DC
V CC
-
Min.
13.5
2.5
Typ.
15.0
-
Max.
400
16.5
3.0
Unit
V
V
Nm
Symbol
Wt
Min.
-
Typ.
270
Max.
-
Unit
g
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Weight
Item
Weight
Unit
A
µs
µs
°C
°C
V
V
6MBP150TEA060
IGBT-IPM
Vin(th)
Vin
On
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
)
on
on
Gate On
Vge (Inside IPM )
Fault (Inside IPM
off
off
/Vin
Gate Off
normal
alarm
/ALM
tALM > Max.
1
tALM >
t ALM 2ms(typ.)
3
Max.
2
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic
Ic
Ic
I ALM
I ALM
I ALM
Figure.4 Definition of tsc
Vcc
PP
IPM
IPM
20 k
DC
15V
VccU
20k
DC
15V
VinU
SW1
P
IPM
DC
15V
SW2
Earth
GND
GND
N
Ic
AC200V
V
Vcc
VinX
DC
300V
U
GNDU
20k
+
+
Vin
HCPL
4504
CT
L
Figure 6. Switching Characteristics Test Circuit
+
W
Icc
A
4700p
N
Cooling
Fin
Vcc
P
Noise
DC
15V
IPM
U
Vin
V
P.G
+8V
fsw
W
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
6MBP150TEA060
IGBT-IPM
Block diagram
P
VccU
4
VinU
3
AL MU
2
Pre- Driver
R ALM 1.5k
GNDU
1
Vcc V
8
VinV
7
AL MV
6
U
Pre- Driver
R ALM 1.5k
GNDV
5
VccW
12
VinW
11
AL MW
10
Vz
V
Pre- Driver
R ALM 1.5k
GNDW
Vz
Vz
9
Vcc
14
VinX
16
W
Pre- Driver
Vz
GND
VinY
13
17
Pre- Driver
Vz
VinZ
Pre-drivers include following functions
1.Amplifier for driver
2.Short circuit protection
3.Under voltage lockout circuit
18
Pre- Driver
Vz
4.Over current protection
5.IGBT chip over heating protection
B
VinDB
15
AL M
19
R ALM 1.5k
N
MBCFM
Outline drawings, mm
Mass : 270g
6MBP150TEA060
IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
P ower sup ply current vs. Switching frequency
Tc=1 25°C
Input signal thresh old voltage
vs. P ower sup ply voltag e
2 .5
P-sid e
N-sid e
60
V cc=17V
50
V cc= 15V
40
V cc=13V
30
V cc= 17V
V cc= 15V
V cc= 13V
20
10
Inp u t sig na l thres hold voltag e
: Vin (on ),Vin (o ff) (V)
Pow er su p pl y c u rre nt : Icc (mA)
70
0
2
} Vin(off)
1
0 .5
5
10
15
20
Switch ing frequency : fs w (k Hz)
25
12
14
18
Un de r volta ge h ys teris is : VH (V)
1
12
10
8
6
4
2
0
20
13
14
15
16
17
Power su p p ly voltag e : Vcc (V)
Un d er voltag e h ysterisis vs. Jn ction tem p erature
Under voltage vs. Junction temp erature
Un d er voltag e : VUVT (V)
} Vin(on)
1 .5
0
0
0 .8
0 .6
0 .4
0 .2
0
40
60
80
100
12 0
140
20
Ju nc tion te m pe ra tu re : Tj (°C)
40
60
80
100
12 0
Ju nc tion te m pe ra tu re : Tj (°C)
140
Over heatin g characteristics
TjOH,TjH vs. Vcc
Alarm hold tim e vs. P ower sup ply voltag e
20 0
O ver heatin g p rotection : TjO H (°C)
OH hy ste risis : Tj H (°C)
3
Alarm hold time : tALM (m Se c)
Tj=25°C
Tj= 12 5°C
2 .5
Tc= 10 0° C
2
Tc=25°C
1 .5
1
0 .5
0
TjO H
15 0
10 0
50
TjH
0
12
13
14
15
16
17
Power su p p ly voltag e : Vcc (V)
18
12
13
14
15
16
17
Power su pp ly voltag e : Vcc (V)
18
6MBP150TEA060
IGBT-IPM
Main circuit characteristics (Respresentative)
20 0
20 0
Coll ec to r Cu rre nt : Ic (A)
Collector current vs. Collector-Em itter voltage
Tj=25°C(Term inal)
Collector Cu rre nt : Ic (A)
Collector current vs. Collector-Em itter voltage
Tj=25°C(Chip)
Vc c= 15V
15 0
Vc c= 15V
15 0
V cc= 17V
V cc= 13V
10 0
V cc=17V
V c c= 13V
10 0
50
0
50
0
0
0 .5
1
1.5
2
2.5
3
0
1
1.5
2
2.5
3
Collector current vs. Collector-Em itter voltage
Tj=125 °C(Chip)
Collector current vs. Collector-Em itter voltage
Tj=125 °C(Term inal)
20 0
20 0
V c c= 15V
15 0
V cc=17V
Vc c= 13V
10 0
50
0
V cc=15V
15 0
Vc c= 17V
V cc=13V
10 0
50
0
0
0.5
1
1.5
2
2.5
3
0
Co llector-Em itter vo lta g e : Vce (V)
1
1.5
2
2.5
3
Forward current vs. Forward voltag e
(Term inal)
30 0
25 0
25 0
Fo rw ard Cu rren t : If (A)
30 0
12 5° C
2 5°C
20 0
0 .5
Co llector-Em itter vo lta g e : Vce (V)
Forward current vs. Forward voltage
(Chip)
Forward Cu rrent : If (A)
0 .5
Co llector-Em itter vo lta g e : Vce (V)
Collector Cu rre nt : Ic (A)
Collector Cu rre nt : Ic (A)
Co llector-Em itter vo lta g e : Vce (V)
15 0
10 0
50
12 5°C
2 5°C
20 0
15 0
10 0
50
0
0
0
0.5
1
1.5
Fo rw ard vol ta ge : Vf (V)
2
2 .5
0
0.5
1
1.5
Fo rw ard vol ta ge : Vf (V)
2
2 .5
6MBP150TEA060
Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e)
Switching Loss vs. Collector Current
Edc=30 0V,Vcc=15 V,Tj=25°C
12
10
Eo n
8
6
Eo ff
4
2
E rr
Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e)
IGBT-IPM
0
12
Eo n
10
8
6
Eo ff
4
E rr
2
0
0
40
80
12 0
160
0
40
12 0
Collec tor cu rren t : Ic (A)
Reversed b iased safe operating area
Vcc=15V,Tj ≦1 25°C
Transient therm al resistance
Th ermal res is ta nc e : R th (j-c) (°C /W )
30 0
20 0
RBS OA(Rep etitive pu lse)
10 0
0
160
1
FWD
IGB T
0 .1
0.01
0
100
200
300
400
500
600
0.00 1
700
0.0 1
0 .1
1
Pu lse width :Pw (sec)
Collector-Em itter voltag e : Vce (V)
Power d eratin g for IG BT
(per device)
Power derating for FW D
(per device)
50 0
30 0
Colle cter Power D issip ation : P c (W )
Co lle cter Power D issip ation : P c (W )
80
Collec tor cu rren t : Ic (A)
40 0
Col lector cu rren t : Ic (A)
Switching Loss vs. Collector Current
Edc=300V,V cc=15V,Tj=1 25°C
40 0
30 0
20 0
10 0
0
25 0
20 0
15 0
10 0
50
0
0
20
40
60
80
100 12 0 140
Case Tem p eratu re : Tc (°C)
16 0
0
20
40
60
80
100
12 0 14 0 160
Case Tem p eratu re : Tc (°C)
6MBP150TEA060
IGBT-IPM
Switching tim e vs. Collector current
Edc=300 V,V cc=15V,Tj=1 25°C
Switching tim e vs. Collector current
Edc=30 0V,Vcc=15 V,Tj=25°C
10 000
Switch in g tim e : ton ,toff,tf (n Sec)
Switch in g tim e : ton ,toff,tf (n Sec)
10 00 0
to n
to ff
1 00 0
10 0
tf
10
to ff
1 000
100
tf
10
0
50
10 0
15 0
20 0
Col lector cu rren t : Ic (A)
250
trr12 5°C
trr2 5° C
10 0
Irr12 5°C
Irr2 5° C
10
1
0
50
10 0
15 0
Fo rw ard cu rren t:IF(A)
20 0
0
50
10 0
15 0
20 0
Col lector cu rren t : Ic (A)
Reverse recovery characteristics
trr,Irr vs.IF
R eve rse rec overy cu rre n t:Irr(A)
Reverse re covery time:trr(n sec)
to n
250
250