6MBP75RA060 600V / 75A 6 in one-package IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Symbol Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms Duty=61.7% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 450 500 400 600 75 150 75 320 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V A A A W °C V V mA V mA °C °C kV N·m N·m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol I CES V CE(sat) VF Condition VCE=600V input terminal open Ic=75A -Ic=75A Min. – – – Typ. – – – Max. Unit 1.0 2.8 3.0 mA V V 6MBP75RA060 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Symbol Iccp Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM ICCN Vin(th) Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100°C *7 3 18 fsw=0 to 15kHz Tc=-20 to 100°C *7 10 65 ON 1.00 1.35 1.70 OFF 1.25 1.60 1.95 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125°C 113 Tj=25°C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25°C Fig.3 12 1425 1500 1575 Unit mA mA V V V °C °C °C °C A µs V V ms µs ohm *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=75A, VDC=300V Typ. Max. Unit - - µs µs µs 0.3 - IF=75A, VDC=300V 3.6 0.4 Definition of tsc Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance INV IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.39 0.90 - Unit °C/W °C/W °C/W Typ. 15 - Max. 400 16.5 20 3.0 3.0 Unit V V kHz N·m N·m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - Min. 200 13.5 1 2.5 2.5 6MBP75RA060 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 6MBP75RA060 IGBT-IPM Characteristics (Representative) Control circuit Power supply current vs. Switching frequency N-side Tj=100°C ········· P-side 35 Input signal threshold voltage vs. Power supply voltage 2.5 Tj=25°C ········· Tj=125°C 2.0 Input signal threshold voltage Vin (ON), Vin (OFF), (V) Power supply current Icc (mA) 30 25 20 15 10 1.5 1.0 0.5 5 0 0 0 5 10 15 20 25 12 13 Switching frequency fsw (kHz) 15 16 17 18 Power supply voltage Vcc (V) Undervoltage hysterisis vs. Junction temperature Undervoltage vs. Junction temperature 1.0 14 Undervoltage hysterisis VH (V) 12 10 Undervoltage VUVT (V) 14 8 6 4 0.8 0.6 0.4 0.2 2 0 0 20 40 60 80 100 120 20 140 40 3.0 100 120 140 200 Overheating protection TCOH,TjOH (°C) OH hysterisis TCH,TjH (°C) Alarm hold time tALM (msec.) 80 Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC Alarm hold time vs. Power supply voltage 2.5 2.0 1.5 1.0 0.5 0 60 Junction temperature Tj (°C) Junction temperature Tj (°C) 12 13 14 15 16 Power supply voltage Vcc (V) 17 18 150 100 50 0 12 13 14 15 16 Power supply voltage Vcc (V) 17 18 6MBP75RA060 IGBT-IPM Inverter Collector current vs. Collector-Emitter voltage Tj=125°C 150 150 100 100 Collector current Ic (A) Collector current Ic (A) Collector current vs. Collector-Emitter voltage Tj=25°C 50 0 50 0 0 1 2 3 4 0 Collector-Emitter voltage VCE (V) 2 3 4 Switching time vs. Collector current Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125°C Switching time ton, toff (nsec.) Edc=300V, Vcc=15V, Tj=25°C Switching time ton, toff (nsec.) 1 Collector-Emitter voltage VCE (V) 1000 1000 100 100 0 20 40 60 80 100 0 120 20 Collector current IC (A) 40 60 80 100 120 Collector current IC (A) Forward current vs. Forward voltage Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) Forward current IF (A) 150 100 50 100 10 0 0 1 2 Foeward voltage VF (V) 3 4 0 20 40 60 Foeward current IF (A) 80 100 120 6MBP75RA060 IGBT-IPM Inverter Reverse biased safe operating area Vcc=15V, Tj < =125°C Transient thermal resistance 675 1 600 Collector current Ic (A) Thermal resistance Rth(j-c) (°C/W) 750 0.1 525 450 375 300 225 150 75 0 0.01 0.001 0.01 0.1 1 0 100 Power derating for IGBT (per device) 400 500 600 700 140 Collector power dissipation Pc (W) Collector power dissipation Pc (W) 300 Power derating for FWD (per device) 350 300 250 200 150 100 50 0 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 0 20 Case temperature Tc (°C) 40 60 80 100 120 140 160 Case temperature Tc (°C) Switching loss vs. Collector current Edc=300V, Vcc=15V, Tj=125°C Switching loss vs. Collector current Edc=300V, Vcc=15V, Tj=25°C 10 Switching loss Eon,Eoff,Err (mJ/cycle) 10 Switching loss Eon,Eoff,Err (mJ/cycle) 200 Collector-Emitter voltage VCE (V) Pulse width Pw (sec.) 8 6 4 2 8 6 4 2 0 0 0 20 40 60 80 Collector current Ic (A) 100 120 0 20 40 60 80 Collector current Ic (A) 100 120 6MBP75RA060 IGBT-IPM Overcurrent protection vs. Junction temperature Vcc=15V Overcurrent protection level Ioc (A) 200 160 120 80 40 0 0 20 40 60 80 100 Junction temperature Tj (°C) 120 140