FUJI 7MBR10NE120

7MBR10NE120
IGBT Modules
IGBT MODULE
1200V / 10A / PIM
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Converter
Brake
Inverter
Item
Symbol
VCES
VGES
IC
Collector current
ICP
-IC
Collector power disspation
PC
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC
ICP
Collector power disspation
PC
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Surge current
IFSM
Repetitive peak reverse voltage
VRRM
Non-Repetitive peak reverse voltage VRSM
Average output current
IO
Surge current (Non-Repetitive)
IFSM
I²t
(Non-Repetitive)
Condition
Collector-Emitter voltage
Gate-Emitter voltage
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
Tj
Tstg
Viso
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
Ra ting
1200
±20
10
20
10
60
1200
±20
5
12.5
40
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m
7MBR10NE120
IGBT Module
Electrical characteristics (Tj=25°C unless without specified)
Item
Symbol
Condition
Characteristics
Typ.
Max.
1.0
0.1
4.5
7.5
3.3
3.0
2100
Unit
Min.
Inverter (IGBT)
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Converter
Brake
(FWD)
Brake (IGBT)
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=10mA
VGE=15V, Ic=10A
-Ic=10A
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=10A
VGE=±15V
RG=62 ohm
IF=10A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=5A, VGE=15V
VCC=600V
IC=5A
VGE=±15V
RG=120 ohm
VR=1200V
trr
VFM
IRRM
IF=25A
VR=1600V
1.2
0.6
1.5
0.5
0.35
1.0
0.1
3.55
0.8
0.6
1.5
0.5
1
0.6
1.4
1.0
mA
µA
V
V
V
pF
µs
µs
µs
µs
µs
mA
µA
V
µs
µs
µs
µs
mA
µs
V
mA
Thermal Characteristics
Item
Symbol
Condition
Min.
Thermal resistance ( 1 device )
Contact thermal resistance
*
Rth(j-c)
Rth(c-f)
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
Characteristics
Typ.
Max.
1.67
3.30
3.12
3.40
0.05
Unit
°C/W
7MBR10NE120
IGBT Module
Characteristics (Representative)
Inverter
Collector current vs. Collector-Emitter voltage
Tj=125°C
25
25
20
20
Collector current : Ic [A]
Collector current : Ic [A]
Collector current vs. Collector-Emitter voltage
Tj=25°C
15
10
5
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
VCE [V]
10
8
Collector-Emitter voltage :
VCE [V]
10
5
0
Collector-Emitter voltage :
15
6
4
2
0
8
6
4
2
0
0
5
10
15
20
25
0
5
10
Gate-Emitter voltage : VGE [V]
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=62 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, RG=62 ohm, VGE=±15V, Tj=125°C
1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10
10
0
5
10
Collector current : Ic [A]
15
20
0
5
10
Collector current : Ic [A]
15
20
7MBR10NE120
IGBT Module
25
800
20
600
15
400
10
200
5
Collector-Emitter voltage : VCE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
1000
100
0
0
0
100
100
200
300
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current vs. Forward voltage
VGE=0V
25
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
Forward current : IF [A]
20
15
10
5
100
10
1
0
0
1
2
3
4
0
5
5
10
15
20
Forward current : IF [A]
Forward voltage : VF [V]
Reversed biased safe operating area
>
< 125°C, RG =
+VGE=15V, -VGE <
= 15V, Tj =
62 ohm
Transient thermal resistance
80
Collector current : Ic [A]
Thermal resistance : Rth (j-c) [°C/W]
100
1
60
40
20
0.1
0.001
0
0.01
Pulse width : PW [sec.]
0.1
1
0
200
400
600
800
1000
Collector-Emitter voltage : VCE [V]
1200
Gate-Emitter voltage : VGE [V]
Dynamic input characteristics
Tj=25°C
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C
IGBT Module
7MBR10NE120
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Switching loss vs. Collector current
Vcc=600V, RG=62 ohm, VGE=±15V
10
Capacitance : Cies, Coes, Cres [nF]
Switching loss : Eon, Eoff, Err [mJ /cycle]
4
3
2
1
1
0.1
0
0
5
10
15
20
Converter Diode
Forward current vs. Forward voltage
30
Forward current : IF [A]
25
20
15
10
5
0
0
0.5
1.0
Forward voltage : VF [V]
0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
1.5
2.0
30
35
7MBR10NE120
IGBT Module
Brake
Collector current vs. Collector-Emitter voltage
Tj=125°C
12.5
12.5
10.0
10.0
Collector current : Ic [A]
Collector current : Ic [A]
Collector current vs. Collector-Emitter voltage
Tj=25°C
7.5
5.0
2.5
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
VCE [V]
10
8
Collector-Emitter voltage :
VCE [V]
5.0
2.5
0.0
Collector-Emitter voltage :
7.5
6
4
2
0
8
6
4
2
0
0
5
10
15
20
25
0
5
Gate-Emitter voltage : VGE [V]
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=120 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, RG=120 ohm, VGE=±15V, Tj=125°C
1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10
10
0
2
4
6
Collector current : Ic [A]
8
10
0
2
4
6
Collector current : Ic [A]
8
10
7MBR10NE120
IGBT Module
25
800
20
600
15
400
10
200
5
Collector-Emitter voltage : VCE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
1000
100
0
0
0
1000
100
20
40
60
80
100
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reversed biased safe operating area
< 15V, Tj <
> 120 ohm
+VGE=15V, -VGE =
= 125°C, RG =
Transient thermal resistance
40
Collector current : Ic [A]
Thermal resistance : Rth (j-c) [°C/W]
50
1
30
20
10
0
0.1
0.001
0.01
0.1
0
1
200
Pulse width PW [sec.]
400
600
800
1000
Collector-Emitter voltage : VCE [V]
1200
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Switching loss vs. Collector current
Vcc=600V, RG=120 ohm, VGE=±15V
Capacitance : Cies, Coes, Cres [nF]
Switching loss : Eon, Eoff, Err [mJ /cycle]
2
1
1
0.1
0
0
2
4
6
Collector current : Ic [A]
8
10
0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
30
35
Gate-Emitter voltage : VGE [V]
Dynamic input characteristics
Tj=25°C
Switching time vs. RG
Vcc=600V, Ic=5A, VGE=±15V, Tj=25°C
IGBT Module
Outline Drawings, mm
7MBR10NE120
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-733-1700
972-381-9991 Fax
http://www.collmer.com