6MBI35S-140 IGBT Modules IGBT MODULE ( S series) 1400V / 35A 6 in one-package Features · Compact Package · P.C.Board Mount Module · Low VCE(sat) Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A Equivalent Circuit Schematic 13(P) A 5(Gv) 9(Gw) 6(Ev) 10(Ew) 1(Gu) 2(Eu) A A W °C °C V N·m 16(U) 3(Gx) 15(V) 7(Gy) 11(Gz) 8(Ey) 12(Ez) 4(Ex) 17(N) *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. – – – – 5.5 7.2 – 2.4 – 3.0 – 4200 – 875 – 770 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.6 – 2.2 – – Max. 1.0 0.2 8.5 2.75 – – – – 1.2 0.6 – 1.0 0.3 3.4 – 0.35 Characteristics Min. Typ. Max. Conditions Unit VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=35mA Tj=25°C VGE=15V, IC=35A Tj=125°C VGE=0V VCE=10V f=1MHz VCC =800V IC=35A VGE=±15V RG=33Ω mA µA V V Tj=25°C Tj=125°C IF=35A V IF=35A, VGE=0V pF µs µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 – – – – – 0.05 0.52 0.90 – Conditions Unit IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 14(W) 6MBI35S-140 IGBT Module Characteristics [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 80 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 80 VGE= 20V15V 12V VGE= 20V 15V 12V 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 60 10V 40 20 10V 40 20 8V 8V 0 0 0 80 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 5 10 Tj= 125°C Tj= 25°C Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 60 40 20 6 4 Ic= 70A Ic= 35A 2 Ic= 17.5A 0 0 1 2 3 4 5 5 10 20 25 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25°C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 10000 Cies Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 15 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 100 200 Gate charge : Qg [ nC ] 300 0 400 Gate - Emitter voltage : VGE [ V ] 0 6MBI35S-140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 125°C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 33ohm, Tj= 25°C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 500 ton tr 100 tf tf 50 50 0 20 40 60 0 20 40 60 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 25°C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=33ohm 5000 14 Eon(125°C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 500 toff ton 100 tr 10 Eon(25°C) 8 Eoff(125°C) 6 Eoff(25°C) 4 Err(125°C) 2 Err(25°C) tf 50 10 0 50 100 500 0 20 Gate resistance : Rg [ohm] 40 60 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=35A, VGE=±15V, Tj= 125°C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>33ohm, Tj=<125°C 25 100 Eon 20 80 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 12 15 10 Eoff 5 60 40 20 Err 0 10 0 50 100 Gate resistance : Rg [ohm] 500 0 200 400 600 800 1000 1200 Collector - Emitter voltage : VCE [ V ] 1400 1600 6MBI35S-140 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=33ohm 80 300 Tj=25°C Tj=125°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 60 40 20 trr(125°C) 100 trr(25°C) Irr(125°C) Irr(25°C) 0 10 0 1 2 3 4 0 10 Forward on voltage : VF [ V ] 20 30 40 50 60 Forward current : IF [ A ] Transient thermal resistance 3 FWD Thermal resistanse : Rth(j-c) [ °C/W ] 1 IGBT 0.1 0.01 0.001 0.01 0.1 1 M623 Pulse width : Pw [ sec ] Outline Drawings, mm 107.5±1 93±0.3 4-ø6.1±0.3 15.24 16.02 2-ø5.5±0.3 15.24 15.24 15.24 17 13 ø2.5±0.1 1.5 6 27.6±0.3 + 0.5 0 93±0.3 A 1.15±0.2 1±0.2 1.5±0.3 2.5±0.3 11.43 11.43 11.43 11.43 11.43 ø0.4 6.5±0.5 3.5±0.5 17±1 20.5±1 mass : 180g Section A-A 12 1 3.81 16.02 ø2.1±0.1 A 0.8±0.2 32±0.3 11 45±1 41.91 69.6±0.3 Shows theory dimensions