7MBR75GE060 IGBT Modules IGBT MODULE 600V / 75A / PIM Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Converter Brake Inverter Item Symbol VCES VGES IC Collector current ICP -IC Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Repetitive peak reverse voltage VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM I²t (Non-Repetitive) Condition Collector-Emitter voltage Gate-Emitter voltage Operating junction temperature Storage temperature Isolation voltage Mounting screw torque Tj Tstg Viso *1 Recommendable value : 1.3 to 1.7 N·m (M4) Continuous 1ms 1 device Continuous 1ms 1 device 10ms 50/60Hz sine wave Tj=150°C, 10ms Tj=150°C, 10ms AC : 1 minute Ra ting 600 ±20 75 150 75 300 600 ±20 50 100 200 600 1 50 800 900 50 350 648 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A A²s °C °C V N·m 7MBR75GE060 IGBT Module Electrical characteristics (Tj=25°C unless without specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 8.5 2.8 3.1 3.0 3.3 6000 Unit Inverter (IGBT) Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Collector-Emitter voltage -VCE Input capacitance Switching time Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff Converter Brake (FWD) Brake (IGBT) Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time tf IRRM trr VFM IRRM Reverse current Reverse recovery time Forward voltage Reverse current VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=75mA VGE=15V chip IC=75A Terminal -IC=75A chip Terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=75A VGE=±15V RG=33 ohm IF=75A VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=50A, VGE=15V VCC=300V IC=50A VGE=±15V RG=51ohm VR=600V 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1 0.6 1.55 1.0 IF=50A VR=800V mA µA V V V V V pF µs µs µs µs µs mA µA V µs µs µs µs mA µs V mA Thermal Characteristics Item Symbol Condition Min. Thermal resistance ( 1 device ) Contact thermal resistance * Rth(j-c) Rth(c-f) Inverter IGBT Inverter FRD Brake IGBT Brake FRD Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic Characteristics Typ. Max. 0.42 1.10 0.63 3.57 2.10 0.05 Unit °C/W IGBT Module 7MBR75GE060 Characteristics (Representative) Inverter Collector current vs. Collector-Emitter voltage Tj=125°C 175 175 150 150 125 125 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 100 75 50 25 100 75 50 25 0 0 0 1 2 3 4 5 6 0 1 2 Collector-Emitter voltage : VCE [V] 4 5 6 10 10 8 VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 8 6 Collector-Emitter voltage : Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C 4 2 0 6 4 2 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=33 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=33 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] 100 100 10 10 0 25 50 75 Collector current : Ic [A] 100 125 0 25 50 75 Collector current : Ic [A] 100 125 150 7MBR75GE060 IGBT Module Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=75A, VGE=±15V, Tj=25°C 500 25 400 20 300 15 200 10 100 5 100 10 1000 0 1200 125 150 0 10 0 100 200 400 600 800 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 175 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 150 Forward current : IF [A] 125 100 75 50 100 25 10 0 0 1 2 3 0 4 25 50 75 100 Forward current : IF [A] Forward voltage : VF [V] Reversed biased safe operating area > < 125°C, RG = +VGE=15V, -VGE < = 15V, Tj = 33 ohm Transient thermal resistance 700 600 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 1 0.1 500 400 300 200 100 0.01 0.001 0 0.01 Pulse width : PW [sec.] 0.1 1 0 100 200 300 400 Collector-Emitter voltage : VCE [V] 500 600 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 7MBR75GE060 IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=300V, RG=33 ohm, VGE=±15V 10 Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ /cycle] 10 8 6 4 2 0.1 0 0 25 50 75 100 125 150 Converter Diode Forward current vs. Forward voltage 60 50 40 30 20 10 0 0 0.5 1.0 Forward voltage : VF [V] 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Forward current : IF [A] 1 1.5 2.0 30 35 7MBR75GE060 IGBT Module Brake Collector current vs. Collector-Emitter voltage Tj=125°C 125 125 100 100 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 75 50 25 0 0 1 2 3 4 5 0 1 2 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C VCE [V] 10 Collector-Emitter voltage : 8 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 5 10 Gate-Emitter voltage : VGE [V] 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] 10 VCE [V] 50 25 0 Collector-Emitter voltage : 75 100 100 10 10 0 20 40 60 Collector current : Ic [A] 80 0 20 40 60 Collector current : Ic [A] 80 7MBR75GE060 IGBT Module Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 500 25 400 20 300 15 200 10 100 5 0 10 10 0 0 100 50 100 150 200 250 300 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reversed biased safe operating area < 15V, Tj < > 51 ohm +VGE=15V, -VGE = = 125°C, RG = Transient thermal resistance 400 1 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 500 0.1 300 200 100 0 0.001 0.01 0.1 1 Pulse width PW [sec.] Capacitance vs. Collector-Emitter voltage Tj=25°C Capacitance : Cies, Coes, Cres [nF] 10 1 0.1 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 0 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C IGBT Module 7MBR75GE060 Outline Drawings, mm Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com