7MBR 25SA-120 IGBT PIM 1200V 6x25A+Chopper Power Integrated Module (PIM) ■ Features • NPT-Technology • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching ■ Outline Drawing ■ Equivalent Circuit ■ Absolute Maximum Ratings ( Tc=25°C) Brake Chopper Rectifier Inverter Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) 2 It (Non Repetitive) Collector-Emitter Voltage Gate –Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque* Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM IO IFSM VCES VGES IC IC PULSE PC VRRM Tj TStg VISO Test Conditions Continuous 1ms 25°C / 80°C 25°C / 80°C 1 device 50Hz/60Hz sinus wave Tj=150°C, 10 ms, sinus wave Continuous 1ms 1 device A.C. 1min. 25°C / 80°C 25°C / 80°C Ratings 1200 ± 20 35 / 25 70 / 50 25 180 1600 25 260 338 1200 ± 20 25 / 15 50 / 30 110 1200 +150 -40 ∼ +125 2500 3.5 Units V A W V A 2 As V A W V °C V Nm Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) IGBT PIM 1200V 6x25A+Chopper 7MBR 25SA-120 ■ Electrical Characteristics( Tj=25°C ) Brake Chopper Rectifier FRD Inverter IGBT Items Test Conditions ICES IGES VGE(th) Collector-Emitter Saturation Voltage VCE(sat) Input Capacitance Turn-off Time Cies ton tr,x tr,i toff tf VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=25mA VGE=15V Chip IC = 25A Terminal f=1MHz, VGE=0V, VCE=10V VCC = 600V IC = 25A VGE = ±15V RG = 51Ω Inductive Load Diode Forward On-Voltage VF IF=25A Reverse Recovery Time trr IF=25A Turn-on Time IRRM ICES IGES VCE(sat) VR =1600V VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=15V Chip IC=15A Terminal VCC = 600V IC = 15A VGE = ±15V RG = 82Ω VR=1200V T= 25°C T=100°C T=25 / 50°C Resistance R B Value B 7.2 2.1 2.2 3000 0.35 0.25 0.10 0.45 0.08 1.1 1.2 Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-off Time 5.5 1.0 200 8.5 Chip Terminal IF=25A ton tr,x toff tf IRRM Typ. Max. Units 2.3 2.4 VFM Turn-on Time Min. Chip Terminal Forward Voltage Reverse Current NTC Symbols Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage 2.10 2.20 0.35 0.25 0.45 0.08 mA nA V 2.7 pF 1.2 0.6 1.0 0.3 3.2 350 1.5 1.0 1.0 200 2.6 1.2 0.6 1.0 0.3 1.0 µs V ns V mA mA nA V µs mA 465 3305 5000 495 3375 Min. Typ. Max. Units 520 3450 Ω K ■ Thermal Characteristics Items Thermal Resistance (1 device) Contact Thermal Resistance Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT Rectifier Diode With Thermal Compound 0.69 1.30 1.14 °C/W 0.90 0.05 7MBR 25SA-120 IGBT PIM 1200V 6x25A+Chopper 7MBR 25SA-120 IGBT PIM 1200V 6x25A+Chopper 7MBR 25SA-120 IGBT PIM 1200V 6x25A+Chopper 7MBR 25SA-120 Specification is subject to change without notice IGBT PIM 1200V 6x25A+Chopper January 1999b