7MBR30NE060 IGBT Modules IGBT MODULE 600V / 30A / PIM Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Converter Brake Inverter Item Symbol VCES VGES IC Collector current ICP -IC Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Repetitive peak reverse voltage VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM I²t (Non-Repetitive) Condition Collector-Emitter voltage Gate-Emitter voltage Operating junction temperature Storage temperature Isolation voltage Mounting screw torque Tj Tstg Viso *1 Recommendable value : 1.3 to 1.7 N·m (M4) Continuous 1ms 1 device Continuous 1ms 1 device 10ms 50Hz/60Hz sine wave Tj=150°C, 10ms Tj=150°C, 10ms AC : 1 minute Ra ting 600 ±20 30 60 30 120 600 ±20 30 60 120 600 1 50 800 900 50 350 648 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A A²s °C °C V N·m 7MBR30NE060 IGBT Module Electrical characteristics (Tj=25°C unless without specified) Item Symbol Condition Characteristics Typ. Max. 1.0 20 4.5 7.5 2.8 3.0 1980 Unit Min. Inverter (IGBT) Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Collector-Emitter voltage Input capacitance Switching time Converter Brake (FWD) Brake (IGBT) Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=30mA VGE=15V, Ic=30A -Ic=30A VGE=0V, VCE=10V, f=1MHz VCC=300V IC=30A VGE=±15V RG=82 ohm IF=30A VCES=600V, VGE=0V VCE=0V, VGE=±20V IC=30A, VGE=15V VCC=300V IC=30A VGE=±15V RG=82ohm VR=600V trr VFM IRRM IF=50A VR=800V 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1.0 0.6 1.55 1.0 mA µA V V V pF µs µs µs µs µs mA µA V µs µs µs µs mA µs V mA Thermal Characteristics Item Symbol Condition Min. Thermal resistance ( 1 device ) Contact thermal resistance * Rth(j-c) Rth(c-f) Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic * NLU (Over current Limiting circuit) Characteristics Typ. Max. 1.04 2.22 1.04 2.10 0.05 Unit °C/W 7MBR30NE060 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125°C 70 70 60 60 50 50 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 40 30 20 10 20 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 30 10 0 Collector-Emitter voltage : 40 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 10 0 10 20 30 Collector current : Ic [A] 40 50 0 10 20 30 Collector current : Ic [A] 40 50 7MBR30NE060 IGBT Module Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 500 25 400 20 300 15 200 10 100 5 0 0 10 10 0 100 50 100 150 Gate charge : Qg [nC] Gate resistance : RG [ohm] FWD Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 70 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current : IF [A] 60 50 40 30 20 100 10 10 1 0 0 1 2 3 4 0 5 10 20 30 40 50 Forward current : IF [A] Forward voltage : VF [V] Reversed biased safe operating area > < 125°C, RG = +VGE=15V, -VGE < = 15V, Tj = 82 ohm Transient thermal resistance 250 1 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 300 0.1 200 150 100 50 0 0.001 0.01 Pulse width : PW [sec.] 0.1 1 0 100 200 300 400 Collector-Emitter voltage : VCE [V] 500 600 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=30A, VGE=±15V, Tj=25°C 7MBR30NE060 IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=300V, RG=82 ohm, VGE=±15V 10 Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ /cycle] 3 2 1 1 0.1 0 0 10 20 30 40 0 50 Converter Diode Forward current vs. Forward voltage 60 Forward current : IF [A] 50 40 30 20 10 0 0 0.5 1.0 Forward voltage : VF [V] 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] 1.5 2.0 30 35 IGBT Module Outline Drawings, mm 7MBR30NE060 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com