IGBT IPM 1200V 6x25A 6MBP 25RA-120 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 900 1000 800 1200 25 50 25 198 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF Conditions VCE=1200V, Input Terminal Open IC=25A -IC=25A Min. Typ. Max. 1.0 2.6 3.0 Units mA V V Min. 3 10 1.00 1.25 Typ. Max. 18 65 1.70 1.95 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Symbols ICCP ICCN Input Signal Threshold Voltage VIN(th) Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis VZ TCOH TCH TjOH TjH IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 1.60 8.0 110 150 Tj=125°C Tj=25°C 38 V 125 20 Surface Of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 10 2 1500 1575 12.5 A µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=25A, VDC=600V Min. 0.3 Typ. IF=25A, VDC=600V Max. Units 3.6 0.4 µs Max. 0.63 1.33 Units • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode With Thermal Compound Min. Typ. 0.05 °C/W 6MBP 25RA-120 n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection IGBT IPM 1200V 6x25A IGBT IPM 1200V 6x25A 6MBP 25RA-120 n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency vs. Power Supply Voltage T j=100°C 35 2,5 V CC= 1 7 V V CC= 1 5 V 25 V CC= 1 3 V 20 15 10 V CC= 1 7 V P-Side V CC= 1 5 V 5 V CC= 1 3 V V in(off) 1,5 5 10 15 20 V in(on) 1,0 0,5 0,0 12 0 0 T j=125°C 2,0 : V in(on) , V in(off) [V] N-Side Input Signal Threshold Voltage Power Supply Current : I CC [mA] T j=25°C 30 25 13 S w itching Frequency : fsw [kHz] 14 [V] H Under Voltage Hysterisis : V Under Voltage : V UV [V] 10 8 6 4 2 40 60 80 100 120 Junction Temperature : T j [°C] 0,4 0,2 0,0 20 140 40 60 80 100 120 Junction Temperature: Tj [°C] 140 Over Heating Characteristics T cOH , T jOH , T cH , T jH vs. V cc , T jOH [°C] cOH T j=125°C 2,0 T j=25°C 1,5 1,0 0,5 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 Over Heating Hysterisis : T 2,5 cH , T jH [°C] 200 Over Heating Protection : T [ms] 18 0,6 3,0 ALM 17 0,8 Alarm Hold Time vs. Power Supply Voltage Alarm Hold Timen : t 16 1,0 12 0,0 12 15 Under Voltage Hysterisis vs. Junction Temperature Under Voltage vs. Junction Temperature 0 20 14 Power Supply Voltage : V cc [V] T jOH 150 T cOH 100 50 T cH ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 1200V 6x25A 6MBP 25RA-120 n Inverter Collector Current vs. Collector-Emitter Voltage C o llector Current vs. Collector-Em itter Voltage T j= 2 5 ° C 50 V C C =17V,15V, 13V 40 C [A] 40 Collector Current : I C [A] V CC= 1 7 V , 1 5 V , 1 3 V Collector Current : I T j=125°C 50 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 30 20 10 0 0,0 3,0 0,5 V D C =600V, V C C =15V, T j=25°C 3,0 , t r, t off , t f [ns] t on 1000 on Switching Time : t Switching Time : t on , t r, t off , t f [ns] t on tf 100 tf 100 10 0 10 20 30 40 0 10 C o llector Current : I C [A] 30 trr, I rr vs. I F trr=125°C 30 20 10 0,5 1,0 1,5 2,0 Forward Voltage : V F [V] 2,5 3,0 Reverse Recovery Time : t Reverse Recovery Current : I F rr rr 25°C [A] T j=125°C [ns] 1000 0 0,0 40 Reverse Recovery Characteristics Forward Voltage vs. Forward Current 40 20 C o llector Current : I C [A] 50 [A] 2,5 t off 10 Forward Current : I 2,0 V D C =600V, V C C =15V, T j=125°C 10000 t off 1000 1,5 Switching Time vs. Collector Current Switching Time vs. Collector Current 10000 1,0 Collector-Emitter Voltage : V C E [V] C o llector-Em itter Voltage : V C E [V] trr=25°C 100 Irr=125°C 10 Irr=25°C 1 0 10 20 30 Forward Current : I F [A] 40 50 IGBT IPM 1200V 6x25A 6MBP 25RA-120 n Inverter Transient Thermal Resistance V C C =15V, T j<125°C 350 [°C/W] 10 Reverse Biased Safe Operating Area 1 SCSOA (non-repetitive pulse) 250 10 10 IGBT -1 200 Collector Current : I Thermal Resistance : R C 10 FWD 0 [A] th(j-c) 300 150 100 50 -2 10 RBSOA (repetitive pulse) 0 -3 10 -2 10 -1 10 0 0 200 Pulse Width : P W [sec] 400 [W] [W] C 100 50 0 60 80 100 120 140 60 40 20 0 160 0 20 V D C =600V, V C C =15V, T j=25°C , E off , E rr [mJ/cycle] on E on 6 4 E off 2 E rr 0 15 20 25 30 Collector Current : I C [A] 35 40 Switching Loss : E , E off , E rr [mJ/cycle] on Switching Loss : E 8 10 80 100 120 140 160 V D C =600V, V C C =15V, T j=125°C 12 10 5 60 Switching Loss vs. Collector Current S w itching Loss vs. Collector Current 0 40 Case Temperature : T C (°C) Case Temperature : T C (°C) 12 1400 80 Collector Power Dissipation : P C Collector Power Dissipation : P 150 40 1200 (per device) 100 200 20 1000 Power Derating For FWD (per device) 0 800 Collector-Emitter Voltage : V CE [V] Power Derating For IGBT 250 600 10 E on 8 6 E off 4 E rr 2 0 0 5 10 15 20 25 30 35 40 6MBP 25RA-120 IGBT IPM 1200V 6x25A n Inverter V cc =15 V 120 oc [A] Over Current Protection vs. Junction Temperature Over Current Protection Level : I 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C] n Outline Drawing Weight: 440g Specification is subject to change without notice March 98