TI TS5A21366DCUR

TS5A21366
www.ti.com................................................................................................................................................. SCDS285A – MARCH 2009 – REVISED OCTOBER 2009
0.75-Ω DUAL SPST ANALOG SWITCH WITH 1.8-V COMPATIBLE INPUT LOGIC
FEATURES
1
•
•
•
•
•
•
•
•
•
•
Dual Single-Pole Single-Throw (SPST) Switch
1.65-V to 5.5-V Power Supply (V+)
Isolation in Powerdown Mode, V+ = 0
Low ON-State Resistance (0.75 Ω Typ)
Excellent ON-State Resistance Matching
Low Charge Injection
Low Total Harmonic Distortion (THD)
High Bandwidth (260 MHz)
1.8-V Compatible Control Input
Threshold Independent of V+
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
•
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
APPLICATIONS
•
•
•
•
•
•
•
Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Portable Media Players
Communication Circuits
Computer Peripherals
DCU PACKAGE
(TOP VIEW)
RSE PACKAGE
(TOP VIEW)
COM1
8 V+
NO1 1
NO1
1
V+
2
IN1
3
8
7
IN2
6
GND
5
NO2
7 IN1
COM1 2
6 COM2
IN2 3
5 NO2
GND 4
4
COM2
DESCRIPTION
The TS5A21366 is a dual single-pole single-throw (SPST) analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance
matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
The control pin can be connected to a low voltage GPIO allowing it to be controlled by 1.8-V signals.
These features make this device ideal for portable audio applications.
The TS5A21366 is available in a small, space-saving 8-pin DCU or RSE package and is characterized for
operation over the free-air temperature range of –40°C to 85°C.
ORDERING INFORMATION (1)
PACKAGE (2)
TA
–40°C to 85°C
(1)
(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
VSSOP – DCU
Tape and reel
TS5A21366DCUR
JBS_
QFN – RSE
Tape and reel
TS5A21366RSER
4F
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TS5A21366
SCDS285A – MARCH 2009 – REVISED OCTOBER 2009................................................................................................................................................. www.ti.com
SUMMARY OF CHARACTERISTICS (1)
Configuration
Single-pole, single-throw (SPST)
Number of channels
2
ON-state resistance (rON)
0.75 Ω
ON-state resistance match (ΔrON)
0.04 Ω
0.15 Ω
ON-state resistance flatness (rON(flat))
Turn-on/turn-off time (tON/tOFF)
49 ns/243 ns
Charge injection (QC)
1.3 pC
Bandwidth (BW)
260 MHz
OFF isolation (OISO)
–62 dB at 1 MHz
Crosstalk (XTALK)
–98 dB at 1 MHz
Total harmonic distortion (THD)
0.002%
Power-supply current (I+)
with VIN = 1.8 V
7.6 µA
8-pin QFN (RSE) or VSSOP
(DCU)
Package option
(1)
V+ = 5 V, TA = 25°C
FUNCTION TABLE
IN
NO TO COM,
COM TO NO
L
OFF
H
ON
TERMINAL FUNCTIONS
TERMINAL
2
DESCRIPTION
DCU
PIN NO.
RSE
PIN NO.
NAME
1
1
NO1
2
8
COM1
3
7
IN2
4
6
GND
Digital ground
5
5
NO2
Switch 2, normally open
6
4
COM2
7
3
IN1
Switch 1, digital control pin to connect COM to NO
8
2
V+
Power supply
Switch 1, normally open
Switch 1, common
Switch 2, digital control pin to connect COM to NO
Switch 2, common
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TS5A21366
www.ti.com................................................................................................................................................. SCDS285A – MARCH 2009 – REVISED OCTOBER 2009
ABSOLUTE MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (3)
–0.5
6.5
V
VNO
VCOM
Analog voltage range (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
INO
ICOM
ON-state switch current
VI
Digital input voltage range (3) (4)
IIK
Digital input clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
VNO, VCOM < 0
–50
VNO, VCOM = 0 to V+
ON-state peak switch current (6)
UNIT
VI < 0
mA
–200
200
–400
400
–0.5
6.5
mA
V
–50
mA
100
mA
–100
100
mA
–65
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration <10% duty cycle
THERMAL IMPEDANCE
UNIT
θJA
(1)
Package thermal impedance (1)
DCU package
227
RSE package
253
°C/W
The package thermal impedance is calculated in accordance with JESD 51-7.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
V+
Power supply voltage range
VNO
VCOM
Analog signal voltage range
VIN
Control input voltage range
TA
Ambient temperature
(1)
(1)
MIN
MAX
UNIT
1.65
5.5
V
0
V+
V
0
5.5
V
–40
85
°C
V+ needs to be supplied prior to the control input, refer to the Application Information section.
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TS5A21366
SCDS285A – MARCH 2009 – REVISED OCTOBER 2009................................................................................................................................................. www.ti.com
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO
ON-state resistance
ron
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 15
ON-state resistance
match between
channels
Δron
VNO = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 15
ON-state resistance
flatness
ron(flat)
VNO = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 15
INO(OFF)
NO OFF leakage
current
INO(PWROFF)
ICOM(OFF)
COM OFF leakage
current
ICOM(PWROFF)
NO ON leakage
current
COM
ON leakage current
0
VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,
Full
0.75
4.5 V
25°C
Full
25°C
Full
0.04
4.5 V
0.15
25°C
5.5 V
Full
0V
25°C
Switch OFF,
See Figure 16
Full
25°C
VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Full
INO(ON)
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 17
ICOM(ON)
VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,
Switch ON,
See Figure 17
0V
25°C
Full
–5
5.5 V
–5
5
10
1.4
–235
0.06
5
10
1.33
–50
Ω
nA
µA
nA
µA
5
50
1.33
Ω
10
235
–10
–5
5.5 V
0.06
Ω
10
235
–10
–5
25°C
Full
–235
–10
5.5 V
0.25
0.25
1.4
V
0.1
0.1
4.5 V
Switch OFF,
See Figure 16
1
1.4
–10
VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,
25°C
V+
nA
5
–50
50
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
5.5 V
1.05
5.5
Input logic low
VIL
Full
5.5 V
0
0.6
V
VI = 1.95 V or GND
Full
5.5 V
–0.6
0.6
µA
VI = 1.95 V
Full
5.5 V
Input leakage current
Input resistance
(1)
(2)
4
IIH, IIL
rIN
6
V
MΩ
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS5A21366
www.ti.com................................................................................................................................................. SCDS285A – MARCH 2009 – REVISED OCTOBER 2009
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
5V
39
49
72
Full
4.5 V
to
5.5 V
28
25°C
5V
168
Full
4.5 V
5.5 V
178
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
5V
1.3
pC
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
5V
19
pF
COM
OFF capacitance
CCOM(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
5V
17
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 18
25°C
5V
33
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
5V
33
pF
CI
VI = V+ or GND,
See Figure 18
25°C
5V
2.5
pF
PSRR
f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω,
CL = 15 pF,
See Figure 25
25°C
5V
–84
dB
Digital input
capacitance
Power supply
rejection ratio
CL= 35 pF,
See Figure 19
97
243
ns
318
323
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
5V
260
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
5V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
5V
–98
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 15 pF,
f = 20 Hz to
20 kHz,
See Figure 24
25°C
5V
0.002
%
VI = 1.95 V or GND
Switch ON or
OFF
Supply
Positive supply
current
I+
25°C
Full
5.5 V
7.6
9
10
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO
ON-state resistance
ron
VNO = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 15
ON-state resistance
match between
channels
Δron
VNO = 2 V, 0.8 V
ICOM = –100 mA,
Switch ON,
See Figure 15
ON-state resistance
flatness
ron(flat)
VNO = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 15
INO(OFF)
VNO = 1 V,
VCOM = 3 V, 1 V,
or
VNO = 3 V,
VCOM = 1 V,
NO OFF leakage
current
INO(PWROFF)
ICOM(OFF)
COM OFF leakage
current
ICOM(PWROFF)
NO ON leakage
current
COM
ON leakage current
INO(ON)
ICOM(ON)
0
Full
Full
25°C
Full
0.045
3V
Switch OFF,
See Figure 16
25°C
3.6 V
Full
0V
Full
25°C
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
0.15
Full
0V
25°C
Switch ON,
See Figure 17
Full
Full
–5
3.6 V
–5
5
10
0.9
–160
0.03
5
10
1
–20
Ω
nA
µA
nA
µA
2
20
1
Ω
5
160
–10
–2
3.6 V
0.03
Ω
5
160
–10
–2
25°C
See Figure 17
–160
–5
3.6 V
0.25
0.25
0.9
V
0.1
0.1
3V
Switch OFF,
See Figure 16
1.5
1.8
25°C
25°C
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
1.1
3V
–5
VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
VNO = 3 V,
VCOM = 1 V,
or
VNO = 1 V,
VCOM = 3 V,
25°C
V+
nA
2
–20
20
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
3.6 V
1.05
5.5
Input logic low
VIL
Full
3.6 V
0
0.6
V
VI = 1.95 V or GND
Full
3.6 V
–0.6
0.6
µA
VI = 1.95 V
Full
3.6 V
Input leakage current
Input resistance
(1)
(2)
6
IIH, IIL
rIN
6
V
MΩ
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS5A21366
TS5A21366
www.ti.com................................................................................................................................................. SCDS285A – MARCH 2009 – REVISED OCTOBER 2009
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
3.3 V
66
83
133
Full
3 V to
3.6 V
43
25°C
3.3 V
138
Full
3 V to
3.6 V
204
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL= 35 pF,
See Figure 19
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
3.3 V
1.3
pC
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
3.3 V
19
pF
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 18
25°C
3.3 V
17
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 18
25°C
3.3 V
30
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
3.3 V
30
pF
CI
VI = V+ or GND,
See Figure 18
25°C
3.3 V
2.5
pF
PSRR
f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω,
CL = 15 pF,
See Figure 25
25°C
3.3 V
–84
dB
Digital input
capacitance
Power supply
rejection ratio
178
247
ns
306
329
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
3.3 V
260
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
3.3 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
3.3 V
–99
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 15 pF,
f = 20 Hz to 20
kHz,
25°C
See Figure 24
3.3 V
0.004
%
VI = 1.95 V or GND
Switch ON or
OFF
Supply
Positive supply
current
I+
25°C
Full
3.6 V
6.8
9
10
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO
ON-state resistance
ron
ON-state resistance
match between
channels
ON-state resistance
flatness
VNO = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 15
Δron
VNO = 1.8 V, 0.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 15
ron(flat)
VNO = 1.8 V, 0.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 15
INO(OFF)
NO OFF leakage
current
INO(PWROFF)
ICOM(OFF)
COM OFF leakage
current
ICOM(PWROFF)
NO ON leakage
current
COM
ON leakage current
0
VNO = 0.5 V,
VCOM = 2.3 V,
or
VNO = 2.3 V,
VCOM = 0.5 V,
Full
1.2
2.3 V
25°C
Full
25°C
Full
0.045
2.3 V
0.4
25°C
2.7 V
Full
0V
25°C
Switch OFF,
See Figure 16
Full
25°C
VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Full
INO(ON)
VNO = 0.5 V,
VCOM = Open,
or
VNO = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 17
ICOM(ON)
VCOM = 0.5 V,
VNO = Open,
or
VCOM = 2.3 V,
VNO = Open,
Switch ON,
See Figure 17
0V
25°C
Full
–5
2.7 V
–5
5
10
0.7
–136
0.02
5
10
0.3
–15
Ω
nA
µA
nA
µA
2
15
0.3
Ω
8
136
–10
–2
2.7 V
0.02
Ω
8
136
–10
–2
25°C
Full
–136
–8
2.7 V
0.6
0.6
0.7
V
0.15
0.15
2.3 V
Switch OFF,
See Figure 16
2.1
2.7
–8
VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
VNO = 2.3 V,
VCOM = 0.5 V,
or
VNO = 0.5 V,
VCOM = 2.3 V,
25°C
V+
nA
2
–15
15
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
2.7 V
1.05
5.5
Input logic low
VIL
Full
2.7 V
0
0.6
V
VI = 1.95 V or GND
Full
2.7 V
–0.6
0.6
µA
VI = 1.95 V
Full
2.7 V
Input leakage current
Input resistance
(1)
(2)
8
IIH, IIL
rIN
6
V
MΩ
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS5A21366
TS5A21366
www.ti.com................................................................................................................................................. SCDS285A – MARCH 2009 – REVISED OCTOBER 2009
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
2.5 V
101
137
222
Full
2.3 V
to 2.7
V
68
25°C
2.5 V
148
Full
2.3 V
to 2.7
V
197
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
2.5 V
1.3
pC
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
2.5 V
19
pF
COM
OFF capacitance
CCOM(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
2.5 V
17
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 18
25°C
2.5 V
27.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
2.5 V
27.5
pF
CI
VI = V+ or GND,
See Figure 18
25°C
2.5 V
2.5
pF
PSRR
f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω,
CL = 15 pF,
See Figure 25
25°C
2.5 V
–84
dB
Digital input
capacitance
Power supply
rejection ratio
CL= 35 pF,
See Figure 19
288
264
ns
333
367
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
2.5 V
260
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
2.5 V
–61
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
2.5 V
–99
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 15 pF,
f = 20 Hz to 20
kHz,
25°C
See Figure 24
2.5 V
0.011
%
VI = 1.95 V or GND
Switch ON or
OFF
Supply
Positive supply
current
I+
25°C
Full
2.7 V
6.6
9
10
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal range
VCOM,
VNO
ON-state resistance
ron
ON-state resistance
match between
channels
Δron
ON-state resistance
flatness
ron(flat)
INO(OFF)
NO OFF leakage
current
INO(PWROFF)
ICOM(OFF)
COM OFF leakage
current
ICOM(PWROFF)
NO ON leakage
current
COM
ON leakage current
V
VNO = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 15
VNO = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 15
VNO = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 15
VNO = 0.3 V,
VCOM = 1.65 V,
or
VNO = 1.65 V,
VCOM = 0.3 V,
Full
1.6
1.65 V
25°C
Full
25°C
Full
0.045
1.65 V
1.7
25°C 1.95 V
Full
Full
25°C
VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Full
INO(ON)
VNO = 0.3 V,
VCOM = Open,
or
VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 17
ICOM(ON)
VCOM = 0.3 V,
VNO = Open,
or
VCOM = 1.65 V,
VNO = Open,
Switch ON,
See Figure 17
–10
1.95 V
1.95 V
25°C
Full
0.5
0.02
–15
–2
1.95 V
5
10
0.2
nA
µA
nA
µA
2
15
0.2
Ω
10
30
–10
–2
5
10
–30
–5
0V
25°C
Full
0.02
Ω
10
30
–10
25°C
Switch OFF,
See Figure 16
–30
–5
0V
2.8
3
0.5
Ω
0.2
0.2
1.65 V
Switch OFF,
See Figure 16
4
5
–10
VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
VNO = 1.65 V,
VCOM = 0.3 V,
or
VNO = 0.3 V,
VCOM = 1.65 V,
25°C
nA
2
–15
15
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
1.95 V
1.05
5.5
Input logic low
VIL
Full
1.95 V
0
0.6
V
VI = 1.95 V or GND
Full
1.95 V
–0.6
0.6
µA
VI = 1.95 V
Full
1.95 V
Input leakage current
Input resistance
(1)
(2)
10
IIH, IIL
rIN
6
V
MΩ
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
1.8 V
198
297
448
Full
1.65 V
to
1.95 V
136
25°C
1.8 V
225
Full
1.65 V
to
1.95 V
204
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
1.8 V
1.4
pC
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
1.8 V
19
pF
COM
OFF capacitance
CCOM(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
1.8 V
17
pF
NO
ON capacitance
CNC(ON),
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 18
25°C
1.8 V
27.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
1.8 V
27.5
pF
CI
VI = V+ or GND,
See Figure 18
25°C
1.8 V
2.5
pF
PSRR
f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω,
CL = 15 pF,
See Figure 25
25°C
1.8 V
–78
dB
Digital input
capacitance
Power supply
rejection ratio
CL= 35 pF,
See Figure 19
620
308
ns
430
514
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
1.8 V
260
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
1.8 V
–59
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
1.8 V
–101
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 15 pF,
f = 20 Hz to 20
kHz,
25°C
See Figure 24
1.8 V
0.001
%
VI = 1.95 V or GND
Switch ON or
OFF
Supply
Positive supply
current
I+
25°C
Full
1.95 V
3.6
9
10
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PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NO1 to NO2). This is
measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
ΔI+
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
12
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TYPICAL PERFORMANCE
0.8
2.5
V+ = 5 V
0.7
V+ = 3.3 V
2.0
V+ = 2.5 V
0.6
V+ = 1.8 V
0.5
rON (Ω)
rON (Ω)
1.5
1.0
0.4
0.3
0.2
85°C
0.5
25°C
0.1
0.0
–40°C
0.0
0
1
2
3
VCOM (V)
4
5
0
6
1
Figure 1. ron vs VCOM
2
3
VCOM (V)
4
5
6
Figure 2. ron vs VCOM (V+ = 5 V)
8
1.0
0.9
7
0.8
6
0.7
5
I+ (µA)
rON (Ω)
0.6
0.5
0.4
4
3
0.3
2
85°C
0.2
25°C
0.1
0.0
I+ (Inx high)
1
I+ (Inx low)
–40°C
0
1
2
VCOM (V)
3
Figure 3. ron vs VCOM (V+ = 3.3 V)
4
0
–40
25
Temperature, TA (°C)
85
Figure 4. Power-Supply Current vs Temperature (V+ = 5 V)
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TYPICAL PERFORMANCE (continued)
50
340
tOFF
tON
-50
240
tON/tOFF (ns)
Leakage Current (nA)
0
–100
140
–150
ICOM(OFF)
ICOM(ON)
–200
INO(OFF)
INO(ON)
–250
–40
25
Temperature, TA (°C)
40
85
1.8
2.5
3.3
5.0
V+ (V)
Figure 5. Leakage Current vs Temperature (V+ = 5.5 V)
Figure 6. tON/tOFF vs Supply Voltage
300
6
V+ = 5.5 V
V+ = 5 V
5
V+ = 4.3 V
250
V+ = 3.3 V
4
V+ = 2.5 V
tOFF
150
NO Out (V)
tON/tOFF (ns)
V+ = 1.8 V
200
3
2
tON
1
100
0
50
–40
25
Temperature, TA (°C)
85
–1
0.0
1.0
1.5
Input Voltage, IN (V)
Figure 7. tON/tOFF vs Temperature (V+ = 3.3 V)
14
0.5
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Figure 8. Input Voltage Thresholds
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TYPICAL PERFORMANCE (continued)
0
–5
–1
–15
–2
–25
Magnitude (dB)
Magnitude (dB)
–3
–4
–5
–35
–45
–6
–55
5V
–7
3.3 V
2.5 V
–8
–9
100000
5V
3.3 V
2.5 V
–65
1.8 V
1.8 V
1000000
10000000
Frequency (Hz)
100000000
1000000000
–75
100000
1000000
Figure 9. Insertion Loss
10000000
Frequency (Hz)
100000000
1000000000
Figure 10. OFF Isolation
20
–20
–30
15
–40
Charge Injection, QC (pC)
Magnitude (dB)
–50
–60
–70
–80
10
5
5V
–90
2.5 V
–100
–110
100000
5V
3.3 V
3.3 V
0
2.5 V
1.8 V
1000000
10000000
Frequency (Hz)
100000000
1000000000
1.8 V
–5
0
1
2
3
4
5
6
Force (V)
Figure 11. Crosstalk
Figure 12. Charge Injection (QC) vs Bias Voltage
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TYPICAL PERFORMANCE (continued)
–30
0.05
–40
0.04
Magnitude (dB)
THD + N (%)
–50
0.03
5V
3.3 V
2.5 V
0.02
–60
–70
1.8 V
–90
5V
3.3 V
0.01
2.5 V
–80
1.8 V
0.00
10
100
1000
Frequency (Hz)
10000
Figure 13. THD + N (%) vs Frequency
16
100000
–100
10
100
1000
10000
100000
Frequency (Hz)
1000000
10000000
Figure 14. Power Supply Rejection Ratio (PSRR)
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PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
rON =
VI
ICOM
IN
VCOM – VNO
Ω
ICOM
VI = V IH or V IL
+
GND
Figure 15. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = V IH or V IL
IN
+
GND
Figure 16. OFF-State Leakage Current (ICOM(OFF), INO(OFF), ICOM(PWROFF), INOC(PWR(FF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = V IH or V IL
IN
+
GND
Figure 17. ON-State Leakage Current (ICOM(ON), INO(ON))
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND
COM
COM
VI
IN
VI = V+ or GND
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 18. Capacitance (CI, CCOM(OFF), CCOM(ON), CNO(OFF), CNO(ON))
V+
NO
VCOM
VI
Logic
Input(A)
VNO
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
CL(B)
IN
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNO)
tOFF
90%
90%
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 5 ns, tf
≤ 5 ns.
B.
CL includes probe and jig capacitance.
Figure 19. Turn-On (tON) and Turn-Off Time (tOFF)
18
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
50 Ω
VNO
NO
Channel ON: NO to COM
VCOM
COM
Source
Signal
VI = V IH or V IL
Network Analyzer Setup
VI
50 Ω
IN
Source Power = 0 dBm
(632-mV P-P at 50-Ωload)
+
GND
DC Bias = 350 mV
Figure 20. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NO to COM
50 Ω
VNO NO
VI = V IO or GND
COM
Source
Signal
VCOM
50
Network Analyzer Setup
VI
50 Ω
Source Power = 0 dBm
(632-mV P-P at 50-Ωload)
IN
+
GND
DC Bias = 350 mV
Figure 21. OFF Isolation (OISO)
V+
Network Analyzer
50 Ω
VNO1
Source
Signal
VNO2
NO1
NO2
COM2
50 Ω
VI
Channel ON: NO to COM
COM1
50 Ω
Network Analyzer Setup
Source Power = 0 dBm
(632 mV P-P at 50 Ωload)
IN
+
GND
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK)
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
VCOM
∆VCOM
CL(A)
VI
VGEN = 0 to V+
IN
Logic
Input(B)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = V IH or V IL
GND
A.
CL includes probe and jig capacitance.
B.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 5 ns, tf
≤ 5 ns.
Figure 23. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V + P-P
VI = (VIO – V+/2) or -V +/2
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(A)
600 Ω
VI
IN
600 Ω
-V +/2
A.
CL includes probe and jig capacitance.
Figure 24. Total Harmonic Distortion (THD)
20
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PARAMETER MEASUREMENT INFORMATION (continued)
VNO
AC Ripple
HPA4194A
–
1 kΩ
+
100 µF
V+
NO
COM
50 Ω
Reference
VI
Test
IN
+
GND
Figure 25. Power Supply Rejection Ratio (PSRR)
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APPLICATION INFORMATION
Independent of V+, low-voltage GPIO-compatible control inputs
TS5A21366 integrates special control inputs with low threshold allowing the device to be controlled by 1.8-V
signals. The thresholds are fixed and independent of the supply value (V+). The low threshold (VIH, VIL) of the
control inputs (IN1, IN2) is achieved by use of an internal bias circuit. To avoid an increased quiescent current
(I+) condition, proper power sequencing must be followed to ensure that the bias circuitry is powered up prior to
applying voltage on the I/Os. The proper sequence is for the V+ pin to be brought up to V+ before the control
inputs (IN1, IN2) are allowed to go to a high level.
22
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PACKAGE MATERIALS INFORMATION
www.ti.com
8-Dec-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TS5A21366DCUR
US8
DCU
8
3000
180.0
8.4
2.25
3.35
1.05
4.0
8.0
Q3
TS5A21366RSER
UQFN
RSE
8
3000
180.0
8.4
1.6
1.6
0.66
4.0
8.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Dec-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS5A21366DCUR
US8
DCU
8
3000
202.0
201.0
28.0
TS5A21366RSER
UQFN
RSE
8
3000
202.0
201.0
28.0
Pack Materials-Page 2
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