TI TS5A3160DBVTG4

TS5A3160
www.ti.com ............................................................................................................................................ SCDS216A – OCTOBER 2005 – REVISED OCTOBER 2009
5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
FEATURES
APPLICATIONS
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1
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Isolation in the Powered-Off Mode, V+ = 0
Specified Make-Before-Break Switching
Low ON-State Resistance (1 Ω)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
DBV OR DCK PACKAGE
(TOP VIEW)
NO 1
6
IN
GND 2
5
V+
NC 3
4 COM
DESCRIPTION/ORDERING INFORMATION
The TS5A3160 is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance
matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
These features make this device suitable for portable audio applications.
ORDERING INFORMATION
TA
PACKAGE
–40°C to 85°C
(1)
(2)
(3)
(1) (2)
SOT (SOT-23) – DBV
SOT (SC-70) – DCK
(3)
ORDERABLE PART NUMBER
TOP-SIDE MARKING (3)
Tape and reel
TS5A3160DBVR
JA8_
Tape and reel
TS5A3160DCKR
JA_
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2009, Texas Instruments Incorporated
TS5A3160
SCDS216A – OCTOBER 2005 – REVISED OCTOBER 2009 ............................................................................................................................................ www.ti.com
Summary of Characteristics (1)
2:1 Multiplexer/
Demultiplexer
(1 × SPDT)
Configuration
Number of channels
1
1.1 Ω
ON-state resistance (ron)
ON-state resistance match (Δron)
0.1 Ω
ON-state resistance flatness (ron(flat))
0.15 Ω
Turn-on/turn-off time (tON/tOFF)
20 ns/15 ns
Make-before-break time (tMBB)
12 ns
Charge injection (QC)
36 pC
Bandwidth (BW)
100 MHz
OFF isolation (OISO)
–65 dB at 1 MHz
Crosstalk (XTALK)
–66 dB at 1 MHz
Total harmonic distortion (THD)
0.01%
Leakage current (ICOM(OFF)/(INC(OFF)
±20 nA
0.1 µA
Power-supply current (I+)
Package options
(1)
6-pin DBV or DCK
V+ = 5 V and TA = 25°C
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
IN
2
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TS5A3160
www.ti.com ............................................................................................................................................ SCDS216A – OCTOBER 2005 – REVISED OCTOBER 2009
ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (3)
–0.5
6.5
V
VNC
VNO
VCOM
Analog voltage range (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
INC
INO
ICOM
On-state switch current
VI
Digital input voltage range (3) (4)
IIK
Digital input clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
θJA
Package thermal impedance (7)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(7)
On-state peak switch current (6)
VNC, VNO, VCOM < 0
VNC, VNO, VCOM = 0 to V+
VI < 0
–50
mA
–200
200
–400
400
–0.5
6.5
–50
mA
V
mA
100
–100
mA
mA
DBV package
165
DCK package
259
–65
UNIT
150
°C/W
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle
The package thermal impedance is calculated in accordance with JESD 51-7.
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ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNC,
VNO
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
Full
Full
Δron
ron(flat)
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNO or VNC = 1 V, 1.5 V,
2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
INC(OFF),
INO(OFF)
VNC or VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V, VCOM = 1 V,
Switch OFF,
See Figure 14
INC(PWROFF),
INO(PWROFF)
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 15
VCOM = 0 to 5.5 V,
VNC or VNO = 5.5 V to 0,
Switch OFF,
See Figure 14
VCOM = 1 V,
VNC or VNO = Open,
or
VCOM = 4.5 V,
VNC or VNO = Open,
Switch ON,
See Figure 15
INC(ON),
INO(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
V+
0.8
4.5 V
0.7
4.5 V
0.05
V
Ω
Ω
0.1
0.1
25°C
25°C
0.9
1.1
4.5 V
Full
1.1
1.5
25°C
NC, NO
ON leakage
current
COM
ON leakage
current
0
Ω
0.15
4.5 V
0.1
Full
0.25
Ω
0.25
25°C
–20
5.5 V
Full
25°C
Full
0V
25°C
Full
25°C
25°C
0.2
1
20
2
–100
0.1
1
20
2
nA
µA
20
100
–20
–20
5.5 V
Full
–1
20
100
–20
–1
0V
Full
–100
–20
5.5 V
2
nA
µA
20
–100
100
nA
Digital Control Input (IN) (2)
Input logic
high
VIH
Full
2.4
5.5
Input logic low
VIL
Full
0
0.8
Input leakage
current
IIH, IIL
(1)
(2)
4
VI = 5.5 V or 0
25°C
Full
5.5 V
–2
0.2
100
100
V
V
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS5A3160
TS5A3160
www.ti.com ............................................................................................................................................ SCDS216A – OCTOBER 2005 – REVISED OCTOBER 2009
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
5V
2
3.5
6
Full
4.5 V to
5.5 V
1
25°C
5V
3
Full
4.5 V to
5.5 V
2
25°C
5V
2
Full
5 V to
5.5 V
2
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Make-beforebreak time
tMBB
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
5V
36.5
pC
8
8.5
13
15
7
ns
ns
12
15
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
18
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
55
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
55
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
5V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
5V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
See Figure 20
25°C
5V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
See Figure 20
25°C
5V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
5V
0.004
%
Supply
Positive supply
current
I+
VI = V+ or GND
25°C
Full
5.5 V
10
50
500
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNC, VNO
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
VNO or VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
Full
Full
Δron
ron(flat)
INC(OFF),
INO(OFF)
NC, NO
ON leakage
current
INC(ON),
INO(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC or VNO = 1 V,
VCOM = 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 15
VCOM = 0 to 3.6 V,
VNC or VNO = 3.6 V to 0,
Switch OFF,
See Figure 14
VCOM = 1 V,
VNC or VNO = Open,
or
VCOM = 3 V,
VNC or VNO = Open,
Switch ON,
See Figure 15
Full
1.2
3V
0.1
3V
Full
0.15
–20
3.6 V
0V
3.6 V
0.3
Ω
Ω
–1
3.6 V
0.2
1
15
2
–20
0.2
1
15
2
nA
µA
10
20
–15
–10
20
50
–15
–1
0V
2
–50
–10
25°C
Full
Ω
0.3
25°C
Full
Ω
0.2
25°C
Full
V
0.15
0.15
3V
25°C
25°C
1.5
1.7
Full
Full
1.6
2
25°C
25°C
V+
1.3
3V
25°C
INC(PWROFF),
INO(PWROFF)
COM
ON leakage
current
0
nA
µA
10
nA
–20
20
2
5.5
V
Full
0
0.8
V
25°C
–2
2
–100
100
Digital Control Input (IN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
6
IIH, IIL
Full
VI = 5.5 V or 0
Full
3.6 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A3160
TS5A3160
www.ti.com ............................................................................................................................................ SCDS216A – OCTOBER 2005 – REVISED OCTOBER 2009
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
3.3 V
2
4.5
13
Full
3 V to
3.6 V
1
25°C
3.3 V
3
Full
3 V to
3.6 V
2
25°C
3.3 V
1
Full
3 V to
3.6 V
1
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Make-beforebreak time
tMBB
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
3.3 V
20
pC
Charge
injection
QC
15
9
15
20
7
ns
ns
12
15
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
See Figure 16
Switch OFF,
25°C
3.3 V
18
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
See Figure 16
Switch ON,
25°C
3.3 V
55
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
55
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
3.3 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
See Figure 20
25°C
3.3 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
See Figure 20
25°C
3.3 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
3.3 V
0.010
%
Supply
Positive supply
current
I+
25°C
VI = V+ or GND
Full
3.6 V
10
30
100
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Electrical Characteristics for 2.5-V Supply (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal
range
VCOM, VNC,
VNO
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
Switch ON,
See Figure 13
25°C
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
25°C
Full
Full
1.8
2.3 V
Δron
ron(flat)
INC(OFF),
INO(OFF)
NC, NO
ON leakage
current
INC(ON),
INO(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
Full
1.5
2.3 V
25°C
VNC or VNO = 0.5 V,
VCOM = 2.2 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V,
25°C
Switch OFF,
See Figure 14
0.15
2.3 V
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open,
Switch ON,
See Figure 15
VCOM = 0 to 2.7 V,
VNC or VNO = 2.7 V to 0,
Switch OFF,
See Figure 14
VCOM = 0.5 V,
VNC or VNO = Open,
or
VCOM = 2.2 V,
VNC or VNO = Open,
Switch ON,
See Figure 15
25°C
Full
0.6
–20
2.3 V
0V
2.7 V
1
Ω
–1
2.7 V
0.1
1
10
2
–20
0.1
1
10
2
nA
µA
10
20
–10
–10
20
50
–10
–1
0V
2
–50
–10
25°C
Full
Ω
1
25°C
Full
Ω
2.6
2.3 V
25°C
Full
Ω
0.2
0.2
Full
Full
2
2.4
25°C
VNO or VNC = 0.8 V, 1.8 V, Switch ON,
ICOM = –8 mA,
See Figure 13
2.5
2.7
25°C
INC(PWROFF),
INO(PWROFF)
COM
ON leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
V
nA
µA
10
nA
–20
20
1.8
5.5
V
Full
0
0.6
V
25°C
–2
2
–20
20
Digital Control Input (IN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
8
IIH, IIL
Full
VI = 5.5 V or 0
Full
2.7 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A3160
TS5A3160
www.ti.com ............................................................................................................................................ SCDS216A – OCTOBER 2005 – REVISED OCTOBER 2009
Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
2.5 V
2
Full
2.3 V to
2.7 V
1
25°C
2.5 V
3
Full
2.3 V to
2.7 V
2
25°C
2.5 V
1
Full
2.3 V to
2.7 V
1
TYP MAX
UNIT
Dynamic
6.5
15
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Make-beforebreak time
tMBB
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
2.5 V
12
pC
17
11
18
20
8
ns
ns
12
15
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
18
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
55
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
55
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
2.5 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
See Figure 20
25°C
2.5 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
See Figure 20
25°C
2.5 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
2.5 V
0.02
%
Supply
Positive supply
current
I+
25°C
VI = V+ or GND
Full
2.7 V
10
30
50
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal
range
VCOM, VNC,
VNO
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
NC, NO
OFF leakage
current
Switch ON,
See Figure 13
25°C
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 13
25°C
Full
Full
5
1.65 V
15
2
1.65 V
Δron
ron(flat)
INC(OFF),
INO(OFF)
NC, NO
ON leakage
current
INC(ON),
INO(ON)
COM
OFF leakage
current
ICOM(PWROFF)
ICOM(ON)
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 13
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 13
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V,
Switch OFF,
See Figure 14
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 15
VCOM = 0 to 1.95 V,
VNC or VNO =1.95 V to 0,
Switch OFF,
See Figure 14
VCOM = 0.3 V,
VNC or VNO = Open,
or
VCOM = 1.65 V,
VNC or VNO = Open,
Switch ON,
See Figure 15
Full
0.15
1.65 V
Ω
Ω
0.4
0.4
25°C
25°C
2.5
3.5
25°C
INC(PWROFF),
INO(PWROFF)
COM
ON leakage
current
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
V
Ω
5
1.65 V
Ω
4.5
Full
25°C
Full
25°C
Full
–5
1.95 V
0V
25°C
Full
25°C
Full
–1
1.95 V
0.1
1
5
2
–20
0.1
1
5
2
nA
µA
5
20
–5
–5
5
20
–5
–1
0V
25°C
Full
–20
–5
1.95 V
2
nA
µA
5
nA
–20
20
1.5
5.5
V
Full
0
0.6
V
25°C
–2
2
–20
20
Digital Control Input (IN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
10
IIH, IIL
Full
VI = 5.5 V or 0
Full
1.95 V
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
1.8 V
6
Full
2.3 V to
2.7 V
5
25°C
1.8 V
6
Full
2.3 V to
2.7 V
5
25°C
1.8 V
2
Full
2.3 V to
2.7 V
2
TYP MAX
UNIT
Dynamic
13
24
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Make-beforebreak time
tMBB
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Charge
injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
25°C
1.8 V
5.5
pC
ns
27
15
27
ns
30
7
12
ns
15
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
18
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
55
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
55
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 19
25°C
1.8 V
105
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
See Figure 20
25°C
1.8 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
See Figure 20
25°C
1.8 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
25°C
1.8 V
0.06
%
Supply
Positive supply
current
I+
25°C
VI = V+ or GND
Full
5
1.95 V
15
nA
50
TYPICAL PERFORMANCE
1.4
3.5
3.0
1.2
V+ = 1.8 V
1.0
2.0
V+ = 2.5 V
ron Ω
ron (Ω)
2.5
1.5
V+ = 3.3 V
0.5
1.0
VCOM (V)
255C
0.6
–405C
0.2
V+ = 5 V
0.5
0.8
0.4
1.0
0.0
0.0
855C
1.5
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCOM V
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3.3 V)
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TYPICAL PERFORMANCE (continued)
1.0
20
COM(ON)
Leakage Current (nA)
85°C
0.9
0.8
ron (Ω)
0.7
25°C
0.6
–40°C
0.5
0.4
0.3
0.2
10
0
NO/NC (off)
−10
−20
−30
NO/NC (on)
0.1
−40
0.0
0
1
2
3
4
5
−40°C
6
25°C
VCOM (V)
Figure 3. ron vs VCOM (V+ = 5 V)
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
40
3500
NC/NO (PWRoff)
3000
V+ = 5 V
30
V+ = 3.3 V
2500
20
COM (PWRoff)
2000
Charge Injection (pC)
Leakage Current (nA)
85°C
TA (°C)
1500
1000
500
0
−500
−40°C
25°C
TA (°C)
85°C
V+ = 2.5 V
10
0
−10
−20
V+ = 1.8 V
−30
−40
0
1
2
3
4
5
6
Bias Voltage
Figure 5. Leakage Current vs Temperature (V+ = 5 V)
Figure 6. Charge Injection (QC) vs VCOM
20
10
tOFF
18
9
8
16
14
7
tON
tON/tOFF (ns)
tON/tOFF (ns)
tOFF
12
10
8
6
6
5
4
tON
3
2
4
1
2
0
0
0
1
2
3
4
5
−40
6
25
TA (5C)
85
V+ (V)
Figure 7. tON and tOFF vs Supply Voltage
12
Figure 8. tON and tOFF vs Temperature (V+ = 5 V)
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TYPICAL PERFORMANCE (continued)
0
2.5
−4
VIH
Gain (dB)
Logic Level Threshold (nA)
−2
2.0
1.5
VIL
1.0
−6
−8
−10
0.5
−12
−14
0.1
0.0
0
1
2
3
4
5
6
1
10
Frequency (MHz)
V+ (V)
0
0.010
−10
0.009
−20
0.008
−30
0.007
−40
−50
−60
−70
0.006
0.005
0.004
0.003
−80
−90
0.1
1000
Figure 10. Bandwidth (Gain vs Frequency) (V+ = 5 V)
THD + (%)
Attenuation (dB)
Figure 9. Logic-Level Threshold vs V+
100
0.002
1
10
Frequency (MHz)
100
0.001
1000
0.000
0
0.01
Figure 11. OFF Isolation vs Crosstalk (V+ = 5 V)
0.1
1
Frequency (kHz)
10
100
Figure 12. Total Harmonic Distortion vs Frequency
250
200
ICC+ (nA)
150
100
50
0
−60
−40
−20
0
20
40
60
80
100
TA (5C)
Figure 13. Power-Supply Current vs Temperature
(V+ = 5 V)
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PIN DESCRIPTION
PIN
NUMBER
NAME
1
NO
Normally open
2
GND
Digital ground
3
NC
4
COM
5
V+
Power supply
6
IN
Digital control to connect COM to NO
DESCRIPTION
Normally closed
Common
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INC(PWROFF)
INO(OFF)
INO(PWROFF)
Leakage current measured at the NC port during the power-off condition, V+ = 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port during the power-off condition, V+ = 0
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
ICOM(PWROFF)
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
Leakage current measured at the COM port during the power-off condition, V+ = 0
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
14
DESCRIPTION
Voltage at COM
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
tMBB
Make-before-break time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
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PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
CI
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
Capacitance of IN
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2).
This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is -3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
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PARAMETER MEASUREMENT INFORMATION
V+
VNC NC
COM
+
VCOM
Channel ON
VNO NO
r on +
IN
VI
ICOM
VCOM * VNO or VNC
W
I COM
VI = VIH or VIL
+
GND
Figure 14. ON-State Resistance (ron)
V+
VNC NC
COM
+
VCOM
+
VNO NO
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
VI
+
GND
Figure 15. OFF-State Leakage Current (INC(OFF), INO(OFF), ICOM(OFF), INC(PWROFF), INO(PWROFF), ICOM(PWROFF))
V+
VNC NC
COM
+
VNO NO
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 16. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
16
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = V+ or GND
VI = V+ or GND
VCOM COM
VBIAS
VI
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
IN
GND
Figure 17. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
V+
VCOM
NC or NO
VNC or VNO
NC or NO
CL(2)
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
RL
IN
VI
Logic
Input(1)
CL(2)
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNC or VNO)
tOFF
90%
90%
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf
< 5 ns.
B.
CL includes probe and jig capacitance.
Figure 18. Turn-On (tON) and Turn-Off Time (tOFF)
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNC
NC
VCOM
COM
NO
VI
Logic
Input
(VI)
VNO
CL(2)
RL
Switch
Output
CL(2)
RL
VCOM = V+
RL = 50 Ω
CL = 35 pF
GND
0
VNC
IN
Logic
Input(1)
V+
50%
0.8 VOUT
0.8 VOUT
VNQ
tMBB
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf
< 5 ns.
B.
CL includes probe and jig capacitance.
Figure 19. Make-Before-Break Time (tMBB)
V+
Network Analyzer
50 W
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = V+ or GND
NO
Network Analyzer Setup
50 W
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 20. Bandwidth (BW)
18
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
Channel OFF: NC to COM
50 W
VNC
NC
VI = V+ or GND
COM
Source
Signal
50 W
VCOM
NO
Network Analyzer Setup
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
VI
50 W
+
GND
DC Bias = 350 mV
Figure 21. OFF Isolation (OISO)
V+
Network Analyzer
Channel ON: NC to COM
50 W
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
VI
50 W
VI = V+ or GND
NO
+
50 W
IN
GND
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK)
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
ON
OFF
OFF V
IL
NC or NO
COM
+
VIH
VCOM
∆VCOM
VCOM
NC or NO
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf
< 5 ns.
2.
CL includes probe and jig capacitance.
Figure 23. Charge Injection (QC)
Channel ON: COM to NC
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
V+
Audio Analyzer
RL
10 mF
Source
Signal
10 mF
NO
COM
600 W
600 W
CL(1)
VI
IN
GND
600 W
Figure 24. Total Harmonic Distortion (THD)
20
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PACKAGE OPTION ADDENDUM
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21-Jul-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A3160DBVR
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DBVRE4
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DBVRG4
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DBVT
ACTIVE
SOT-23
DBV
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DBVTE4
ACTIVE
SOT-23
DBV
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DBVTG4
ACTIVE
SOT-23
DBV
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DCKR
ACTIVE
SC70
DCK
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DCKRE4
ACTIVE
SC70
DCK
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DCKRG4
ACTIVE
SC70
DCK
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DCKT
ACTIVE
SC70
DCK
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DCKTE4
ACTIVE
SC70
DCK
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3160DCKTG4
ACTIVE
SC70
DCK
6
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
21-Jul-2009
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jul-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
TS5A3160DBVR
SOT-23
3000
180.0
DBV
6
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
9.2
3.23
3.17
1.37
4.0
8.0
Q3
TS5A3160DBVT
SOT-23
DBV
6
250
180.0
9.2
3.23
3.17
1.37
4.0
8.0
Q3
TS5A3160DCKR
SC70
DCK
6
3000
180.0
8.4
2.24
2.34
1.22
4.0
8.0
Q3
TS5A3160DCKT
SC70
DCK
6
250
180.0
8.4
2.24
2.34
1.22
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jul-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS5A3160DBVR
SOT-23
DBV
6
3000
202.0
201.0
28.0
TS5A3160DBVT
SOT-23
DBV
6
250
202.0
201.0
28.0
TS5A3160DCKR
SC70
DCK
6
3000
202.0
201.0
28.0
TS5A3160DCKT
SC70
DCK
6
250
202.0
201.0
28.0
Pack Materials-Page 2
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