2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 35 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 4 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µA VCB = 20 V, IE = 0 60 — 320 VCE = 3 V, IC = 10 mA hFE2 10 — — VCE = 3 V, IC = 500 mA*2 Collector to emitter saturation voltage VCE(sat) — 0.2 0.6 V I C = 150 mA, IB = 15 mA*2 Base to emitter voltage VBE — 0.64 — V VCE = 3 V, IC = 10 mA DC current transfer ratio hFE1* 1 Notes: 1. The 2SC3553 is grouped by h FE1 as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 See characteristic curves of 2SC1213. 2 2SC3553 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 2.2 Max 0.6 0.6 Max 0.45 ± 0.1 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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