2SC2853, 2SC2854 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1188 and 2SA1189 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2853, 2SC2854 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC2853 2SC2854 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE –100 –100 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SC2853 2SC2854 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 90 — — 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 90 — — 120 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 — — 0.1 µA VCB = 70 V, IE = 0 Emitter cutoff current I EBO — — 0.1 — — 0.1 µA VEB = 2 V, IC = 0 250 — 800 250 — 800 1 VCE = 12 V, IC = 2 mA*2 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — 0.05 0.10 — 0.05 0.10 V Base to emitter saturation voltage VBE(sat) — 0.7 1.0 — 0.7 1.0 V Gain bandwidth product fT — 310 — — 310 — MHz VCE = 6 V, IC = 10 mA — 3 — — 3 — pF Collector output capacitance Cob Notes: 1. The 2SC2853 and 2SC2854 are grouped by h FE as follows. 2. Pulse test D E 250 to 500 400 to 800 See characteristic curves of 2SC2855 and 2SC2856. 2 I C = 10 mA, IB = 1 mA*2 VCB = 10 V, IE = 0, f = 1 MHz 2SC2853, 2SC2854 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 600 400 200 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. 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