ETC 2SC2396D

2SC2396, 2SC2543, 2SC2544
Silicon NPN Epitaxial
ADE-208-1062A (Z)
2nd. Edition
Mar. 2001
Application
• Low frequency amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC2396
2SC2543
2SC2544
Unit
Collector to base voltage
VCBO
60
90
120
V
Collector to emitter voltage
VCEO
60
90
120
V
Emitter to base voltage
VEBO
5
5
5
V
Collector current
IC
100
100
100
mA
Emitter current
IE
–100
–100
–100
mA
Collector power dissipation
PC
400
400
400
mW
Junction temperature
Tj
150
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC2396
2SC2543
2SC2544
Item
Symbol Min
Typ
Max
Min
Typ Max
Min
Typ Max
Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 60
—
—
90
—
—
120
—
—
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 60
—
—
90
—
—
120
—
—
V
IC = 1 mA,
RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO 5
—
—
5
—
—
5
—
—
V
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
—
—
0.1
—
—
0.1
—
—
0.1
µA
VCB = 50 V, IE = 0
Emitter cutoff current
IEBO
—
—
0.1
—
—
0.1
—
—
0.1
µA
VEB = 2 V, IC = 0
250
—
1200 250
—
1200
250
—
800
DC current transfer ratio hFE*
1
VCE = 12 V,
IC = 2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
0.2
—
—
0.2
—
—
0.2
V
IC = 10 mA,
IB = 1 mA
Base to emitter voltage
VBE
—
0.6
—
—
0.6
—
—
0.6
—
V
VCE = 12 V,
IC = 2 mA
Gain bandwidth product fT
—
90
—
—
90
—
—
90
—
MHz VCE = 12 V,
IC = 2 mA
Collector output
capacitance
—
3.0
—
—
3.0
—
—
3.0
—
pF
Note:
Cob
1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h FE1 as follows.
D
E
F
2SC2396, 2SC2543
250 to 500
400 to 800
600 to 1200
2SC2544
250 to 500
400 to 800
—
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
2
VCB = 10 V, IE = 0,
f = 1 MHz
2SC2396, 2SC2543, 2SC2544
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
600
400
200
0
50
100
Ambient Temperature Ta (°C)
150
3
2SC2396, 2SC2543, 2SC2544
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
0.7
0.60 Max
0.55Max
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
TO-92 (1)
Conforms
Conforms
0.25 g
2SC2396, 2SC2543, 2SC2544
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5