HITACHI 2SC1344

2SC1344, 2SC1345
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1344, 2SC1345
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1344
2SC1345
Unit
Collector to base voltage
VCBO
30
55
V
Collector to emitter voltage
VCEO
30
50
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Collector power dissipation
PC
200
200
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1344
2SC1345
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
30
—
—
55
—
—
V
I C = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
30
—
—
50
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
—
—
0.5
µA
VCB =18 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.5
—
—
0.5
µA
VCB = 2 V, IC = 0
250
—
1200 250
—
1200
Base to emitter voltage VBE
—
—
0.75
—
—
0.75
V
VCE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
—
—
0.5
—
—
0.5
V
I C = 10 mA, IB = 1 mA
Gain bandwidth product f T
—
230
—
—
230
—
MHz
VCE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
—
3.5
—
—
3.5
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
—
8
—
—
8
dB
VCE = 6 V, IC = 0.1 mA,
f = 10 Hz, Rg = 10 kΩ
—
—
1
—
—
1
dB
VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 10 kΩ
DC current transfer ratio hFE*
Note:
1
VCE(sat)
1. The 2SC1344 and 2SC1345 are grouped by h FE as follows.
D
E
F
250 to 500
400 to 800
600 to 1200
2
VCE = 12 V, IC = 2 mA
2SC1344, 2SC1345
Small Signal h Parameters (VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25°C, Emitter
common)
Item
Symbol
D
E
F
Unit
Input impedance
hie
110
170
240
kΩ
Voltage feedback ratio
hre
9.5
14.5
16
× 10 –4
Current transfer ratio
hfe
340
540
825
Output admittance
hoe
12.0
12.5
13.5
Typical Output Characteristics P
C =
26
20
0m
24
W
22
20
18
16
14
12
10
8
6
4
2 µA
IB = 0
Collector Current IC (mA)
10
200
150
100
50
0
8
6
4
2
0
100
150
50
Ambient Temperature Ta (°C)
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
5
Collector Current IC (mA)
VCE = 12 V
600
500
5°C
7
a=
T
400
24
Typical Transfer Characteristics
700
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
250
µS
25
300
200
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2
5 10 20
Collector Current IC (mA)
50
4
VCE = 12 V
3
2
1
0
0.6
0.8
1.0
0.2
0.4
Base to Emitter Voltage VBE (V)
3
2SC1344, 2SC1345
Collector Output Capacitance vs.
Collector to Base Voltage
Base to Emitter Voltage vs. Ambient
Temperature
0.8
Collector Output Capacitance Cob (pF)
Base to Emitter Voltage VBE (V)
0.9
VCE = 12 V
IC = 2 mA
0.7
0.6
0.5
0.4
–20
0
20
40
60
Ambient Temperature Ta (°C)
10
IE = 0
f= 1 MHz
5
2
1
1
80
Emitter Input Capacitance vs.
Emitter to Base Voltage
Contours of Constant Noise Figure
100
Signal Source Resistance Rg (kΩ)
IC = 0
f= 1 MHz
5
2
1
4
5
2
Emitter to Base Voltage VEB (V)
10
1
dB
10 B
d
8 dB
6 dB
4 dB
2 dB
1
Emitter Input Capacitance Cie (pF)
10
1
5
10
2
Collector to Base Voltage VCB (V)
dB
30 2
dB
4d
10
B
6d
B
3 8
dB
10
dB
1.0
VCE = 6 V
f = 10 Hz
0.3
0.1
0.001 0.003 0.01
0.03
0.1
0.3
Collector Current IC (mA)
1.0
3.0
2SC1344, 2SC1345
Contours of Constant Noise Figure
Contours of Constant Noise Figure
d
6 B
8 dB
dB
dB
0.3
0.1
0.001 0.003 0.01
0.03
0.1
0.3
1.0
3.0
100
Signal Source Resistance Rg (kΩ)
1.0
dB
3
dB
2
4
VCE = 6 V
f = 120 Hz
dB
1
10
dB
8 dB
6 dB
4
2
30
1
VCE = 6 V
f = 1 kHz
30
4
2
10
1
2
3
4
1
dB
dB
10
8 dB
6 dB
dB
dB
dB
dB
d
6 B
d
8 B
10 dB
dB
1.0
0.3
0.1
0.001 0.003 0.01
0.03
0.1
0.3
Collector Current IC (mA)
Collector Current IC (mA)
Noise Figure vs. Frequency
Noise Figure vs. Collector to
Emitter Voltage
12
1.0
3.0
10
10
VCE = 6 V
IC = 0.1 mA
Rg = 10 kΩ
8
Noise Figure NF (dB)
Noise Figure NF (dB)
Signal Source Resistance Rg (kΩ)
100
6
4
2
IC = 0.1 mA
f = 10 Hz
Rg = 10 kΩ
8
6
4
2
0
0
10
20
50
100
200
Frequency f (Hz)
500
1k
1
2
5
10
20
50
Collector to Emitter Voltage VCE (V)
5
2SC1344, 2SC1345
Noise Figure vs. Collector to
Emitter Voltage
Noise Figure vs. Collector to
Emitter Voltage
10
IC = 0.1 mA
f = 120 Hz
Rg = 10 kΩ
8
Noise Figure NF (dB)
Noise Figure NF (dB)
10
6
4
2
6
4
2
0
0
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
6
IC = 0.1 mA
f = 1 kHz
Rg = 10 kΩ
8
50
1
2
5
10
20
Collector to Emitter Voltage VCE (V)
50
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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