2SB738, 2SB739 Silicon PNP Epitaxial ADE-208-1030 (Z) 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB738 2SB739 Unit Collector to base voltage VCBO –20 –20 V Collector to emitter voltage VCEO –16 –20 V Emitter to base voltage VEBO –6 –6 V Collector current IC –2 –2 A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SB738 2SB739 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –20 — — –20 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –16 — — –20 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –6 — — –6 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –2 — — –2 µA VCB = –16 V, IE = 0 Emitter cutoff current I EBO — — –0.2 — — –0.2 µA VEB = –6 V, IC = 0 100 — 320 — 320 VCE = –2 V, IC = –0.1 A I C = –1 A, IB = –0.1 A 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — –0.3 — — –0.3 V Gain bandwidth product fT — 150 — — 150 — MHz VCE = –2 V, IC = –10 mA — 50 — — 50 — pF Collector output capacitance Cob Note: 1. The 2SB738 and 2SB739 are grouped by h FE as follows. B C 100 to 200 160 to 320 2 100 VCB = –10 V, IE = 0, f = 1 MHz 2SB738, 2SB739 Maximum Collector Dissipation Curve Typical Output Characteristics (1) –100 .35 –0 Collector Current IC (mA) Collector Power Dissipation PC (W) 1.2 0.8 0.4 –80 25 –0. –0.2 –60 5 –0.1 –40 –0.1 –20 –0.05 mA IB = 0 50 100 Ambient Temperature Ta (°C) 0 0 150 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) –1.6 –10 –1.2 –5 mA –0.8 Typical Transfer Characteristics –1,000 –25 –20 –15 PC = 0. 9W –0.4 Collector Current IC (mA) –2.0 Collector Current IC (A) .3 –0 VCE = –2 V Pulse –300 –100 Ta = 75°C –30 25 –10 –25 –3 –1 0 –0.4 –0.8 –1.2 –1.6 –2.0 Collector to Emitter Voltage VCE (V) 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 3 2SB738, 2SB739 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 10,000 3,000 Pulse VCE = –2V Ta = 75°C 1,000 25 300 100 –25 30 10 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Base to Emitter Saturation Voltage VBE (sat) (V) Collector to Emitter Saturation Voltage VEC (sat) (V) Saturation Voltage vs. Collector Current –3.0 VBE (sat) –1.0 –0.3 –0.1 VCE (sat) –0.03 Pulse IC = 10 IB –0.01 –0.003 –3 –10 –30 –100 –300 –1,000 –3,000 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 4 1,000 f = 1 MHz IE = 0 300 100 30 10 –0.1 –0.3 –1.0 –3 –10 Collector to Base Voltage VCB (V) 2SB738, 2SB739 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 Mod — Conforms 0.35 g 5 2SB738, 2SB739 Cautions 1. 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