HITACHI 2SA1191

2SA1190, 2SA1191
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2855 and 2SC2856
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1190, 2SA1191
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1190
2SA1191
Unit
Collector to base voltage
VCBO
–90
–120
V
Collector to emitter voltage
VCEO
–90
–120
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–100
–100
mA
Emitter current
IE
100
100
mA
Collector power dissipation
PC
400
400
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
2
2SA1190, 2SA1191
Electrical Characteristics (Ta = 25°C)
2SA1190
2SA1191
Item
Symbol
Min
Typ
Max
Min
Collector to base
breakdown voltage
V(BR)CBO
–90
—
—
Collector to emitter
breakdown voltage
V(BR)CEO
–90
—
Emitter to base
breakdown voltage
V(BR)EBO
–5
Collector cutoff current
I CBO
Emitter cutoff current
I EBO
1
Typ
Max
Unit
Test conditions
–120 —
—
V
I C = –10 µA, IE = 0
—
–120 —
—
V
I C = –1 mA, RBE = ∞
—
—
–5
—
—
V
I E = –10 µA, IC = 0
—
—
–0.1
—
—
–0.1
µA
VCB = –70 V, IE = 0
—
—
–0.1
—
—
–0.1
µA
VEB = –2 V, IC = 0
250
—
800
250
—
800
DC current trnsfer ratio
hFE*
Collector to emitter
saturation voltage
VCE(sat)
—
–0.05 –0.15 —
–0.05 –0.15 V
Base to emitter
saturation voltage
VBE(sat)
—
–0.7
–1.0
—
–0.7
–1.0
V
Gain bandwidth product f T
—
130
—
—
130
—
MHz
VCE = –6 V,
I C = –10 mA
Collector output
capacitance
Cob
—
3.2
—
—
3.2
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
0.15
1.5
—
0.15
1.5
dB
VCE = –6 V,
I C = –0.1 mA,
Rg = 10 kΩ
f = 1 kHz
—
0.2
2.0
—
0.2
2.0
dB
VCE = –6 V,
I C = –0.1 mA,
Rg = 10 kΩ
f = 10 Hz
—
0.7
—
—
0.7
—
nV/
√Hz
VCB = –6 V,
I C = –10 mA,
Rg = 0, f = 1 kHz
Noise voltage reffered
to input
en
VCE = –12 V,
I C = –2 mA*2
I C = –10 mA,
I B = –1 mA*2
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h FE as follows.
2. Pulse test
D
E
250 to 500
400 to 800
3
2SA1190, 2SA1191
Typical Output Characteristics (1)
–20
600
0
400
200
5
–2
–16
mW
00
=4
Collector Current IC (mA)
–3
PC
Collector power dissipation Pc (mW)
Maximum Collector Dissipation Curve
–12
–8
–10
–5 µA
–4
0
50
100
150
Ambient Temperature Ta (°C)
–20
–40
–60
–80
–100
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Typical Output Characteristics (2)
–20
–100
–8
–18
–16
–6
–14
–12
–10
–4
–8
–6
–2
–4
–2 µA
IB = 0
0
–4
–8
–12
–16
–20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
–10
Collector Current IC (mA)
–15
IB = 0
0
4
–20
VCE = –6 V
Pulse
–10
Ta = 75°C
25
–25
–1.0
–0.1
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage VBE (V)
2SA1190, 2SA1191
Collector Cutoff Current vs.
Collector to Base Voltage
Collector Cutoff Current vs.
Collector to Emitter Voltage
–1,000
IE = 0
–1,000
Ta = 75°C
25
–100
–25
–10
Collector cutoff current ICEO (nA)
Collector cutoff current ICBO (pA)
–10.000
–1
0
–10
25
–1.0
–25
–0.1
0
–2
–4
–6
–8
–10
Emitter to Base Voltage VEB (V)
Collector to emitter breakdown voltage
V(BR) CER (V)
Emitter cutoff current IEBO (pA)
Ta = 75°C
–100
Ta = 75°C
25
–10
–25
–1.0
0
Emitter Cutoff Current vs.
Emitter to Base Voltage
IC = 0
–100
–0.1
–20
–40
–60
–80
–100
Collector to Base Voltage VCB (V)
–1,000
RBE = ∞
–20
–40
–60
–80
–100
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
–190
Typical Value
IC = –1 mA
–180
–170
–160
–150
–140
10
100
1k
10 k
100 k
Base to Emitter Resistance RBE (Ω)
5
2SA1190, 2SA1191
Collector to Emitter Saturation Voltage vs.
Collector Current
DC Current Transfer Ratio vs.
Collector Current
Collector to emitter saturation voltage
VCE (sat) (V)
1,000
DC current transfer ratio hFE
Ta = 75°C
300
25
–25
100
30
VCE = –12 V
Pulse
10
–1
–3
–10
–30
Collector Current IC (mA)
–1.0
IC = 10 IB
Pulse
–0.3
–0.1
–25
–0.01
–1
–100
Gain bandwidth product fT (MHz)
Base to emitter saturation voltage
VBE (sat) (V)
6
–100
1,000
IC = 10 IB
Pulse
–3
Ta = –25°C
75
–0.3
–0.1
–1
–3
–10
–30
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
–10
–1.0
25
–0.03
Base to Emitter Saturation Voltage vs.
Collector Current
25
Ta = 75°C
–3
–10
–30
Collector Current IC (mA)
–100
VCE = –6 V
500
200
100
50
20
10
–0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
–50
100
f = 1 MHz
IE = 0
30
10
3
1
–1
–3
–10
–30
–100
Collector to Base Voltage VCB (V)
Noise Voltage Reffered to Input vs.
Signal Source Resistance
1,000
VCE = –6 V
f = 1 kHz
100
IC = –10 mA
10
–1
–0.1
1.0
0.1
10
100
1k
10 k
100 k
Signal Source Resistance Rg (Ω)
Noise voltage reffered to input en (nV/
√Hz)
Noise voltage reffered to input en (nV/
√Hz)
Collector output capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Noise voltage reffered to input en (nV/
√Hz)
2SA1190, 2SA1191
Noise Voltage Reffered to Input vs.
Collector Current
10
VCE = –6 V
Rg = 0
f = 1 kHz
3
1.0
0.3
0.1
–0.1
–0.3
–1.0
–3
Collector Current IC (mA)
–10
Noise Voltage Reffered to Input vs.
Collector to Emitter Voltage
1.0
0.9
0.8
0.7
0.6
0.5
–1
IC = –1 mA
Rg = 0
f = 1 kHz
–3
–10
–30
–100
Collector to Emitter Voltage VCE (V)
7
Noise voltage reffered to input en (nV/
√Hz)
2SA1190, 2SA1191
8
Noise Voltage Reffered to Input vs.
Frequency
2.0
VCE = –6 V
Rg = 0
1.6
1.2
0.8
IC = –1 mA
–10
0.4
0
10
100
1k
10 k
Frequency f (Hz)
100 k
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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