HITACHI 2SD1366

2SD1366
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1366
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
25
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
1
A
1.5
A
1
W
Collector peak current
iC(peak)*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.1
µA
VCB = 20 V, IE = 0
Emitter cutoff current
I EBO
0.1
µA
VEB = 4 V, IC = 0
DC current transfer ratio
hFE*
Collector to emitter saturation
voltage
—
1
85
—
240
VCE(sat)
—
0.15
0.3
V
I C = 0.8 A, IB = 0.08 A, Pulse
Base to emitter saturation
voltage
VBE(sat)
—
0.9
1.0
V
I C = 0.8 A, IB = 0.08 A, Pulse
Gain bandwidth product
fT
—
240
—
MHz
VCE = 2 V, IC = 0.5 A, Pulse
Collector output capacitance
Cob
—
22
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1366 is grouped by h FE as follows.
Mark
AA
AB
hFE
85 to 170
120 to 240
2
VCE = 2 V, IC = 0.5 A, Pulse
2SD1366
Typical Output Characteristics
Maximum Collector Dissipation Curve
1,000
Collector Current IC (mA)
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
1.2
0.8
0.4
800
7
6
5
600
400
4
3
2
200
1 mA
IB = 0
0
0
100
150
50
Ambient Temperature Ta (°C)
DC Current Transfer Ratio
vs. Collector Current
Typical Transfer Characteristics
5,000
VCE = 2 V
300
Ta = 75°C
25°C
100
30
10
3
1
DC Current Transfer Ratio hFE
1,000
Collector Current IC (mA)
0.4
0.8
1.2
1.4
1.6
Collector to Emitter Voltage VCE (V)
VCE = 2 V
2,000
1,000
500
Ta = 75°C
200
25°C
100
50
20
10
5
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
1
3
10
30
100 300 1,000
Collector Current IC (mA)
3
Gain Bandwidth Product
vs. Collector Current
Collector to Emitter Saturation
Voltage vs. Collector Current
300
0.25
IC = 10 IB
Gain Bandwidth Product fT (MHz)
Collector to Emitter Saturation Voltage VCE(sat) (V)
2SD1366
0.20
0.15
0.10
0.05
25
Ta = 75°C
VCE = 2 V
200
100
0
10
0
1
3
10
30
100 300 1,000
Collector Current IC (mA)
100
300
30
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
200
f = 1 MHz
IE =0
100
50
20
10
5
1
2
5
10
20
Collector to Base Voltage VCB (V)
4
50
1,000
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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