2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 1 A 1.5 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 25 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 20 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 µA VCB = 20 V, IE = 0 Emitter cutoff current I EBO 0.1 µA VEB = 4 V, IC = 0 DC current transfer ratio hFE* Collector to emitter saturation voltage — 1 85 — 240 VCE(sat) — 0.15 0.3 V I C = 0.8 A, IB = 0.08 A, Pulse Base to emitter saturation voltage VBE(sat) — 0.9 1.0 V I C = 0.8 A, IB = 0.08 A, Pulse Gain bandwidth product fT — 240 — MHz VCE = 2 V, IC = 0.5 A, Pulse Collector output capacitance Cob — 22 — pF VCB = 10 V, IE = 0, f = 1 MHz Note: 1. The 2SD1366 is grouped by h FE as follows. Mark AA AB hFE 85 to 170 120 to 240 2 VCE = 2 V, IC = 0.5 A, Pulse 2SD1366 Typical Output Characteristics Maximum Collector Dissipation Curve 1,000 Collector Current IC (mA) Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 0.8 0.4 800 7 6 5 600 400 4 3 2 200 1 mA IB = 0 0 0 100 150 50 Ambient Temperature Ta (°C) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 5,000 VCE = 2 V 300 Ta = 75°C 25°C 100 30 10 3 1 DC Current Transfer Ratio hFE 1,000 Collector Current IC (mA) 0.4 0.8 1.2 1.4 1.6 Collector to Emitter Voltage VCE (V) VCE = 2 V 2,000 1,000 500 Ta = 75°C 200 25°C 100 50 20 10 5 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1 3 10 30 100 300 1,000 Collector Current IC (mA) 3 Gain Bandwidth Product vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 300 0.25 IC = 10 IB Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SD1366 0.20 0.15 0.10 0.05 25 Ta = 75°C VCE = 2 V 200 100 0 10 0 1 3 10 30 100 300 1,000 Collector Current IC (mA) 100 300 30 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE =0 100 50 20 10 5 1 2 5 10 20 Collector to Base Voltage VCB (V) 4 50 1,000 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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