2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6 V Collector current IC 2 A 3 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 20 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 16 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 µA VCB = 16 V, IE = 0 Emitter cutoff current I EBO 0.1 µA VEB = 5 V, IC = 0 DC current transfer ratio hFE* Collector to emitter saturation voltage — 1 100 — 500 VCE(sat) — 0.15 0.3 V I C = 1 A, IB = 0.1 A, Pulse Base to emitter saturation voltage VBE(sat) — 0.9 1.2 V I C = 1 A, IB = 0.1 A, Pulse Gain bandwidth product fT — 100 — MHz VCE = 2 V, IC = 10 mA Collector output capacitance Cob — 20 — pF VCB = 10 V, IE = 0, f = 1 MHz Note: 1. The 2SD1367 is grouped by h FE as follows. Mark BA BB BC hFE 100 to 200 160 to 320 250 to 500 2 VCE = 2 V, IC = 0.1 A, Pulse 2SD1367 Typical Output Characteristics 100 1.2 0.2 Collector Current IC (mA) Collector Power Dissipation PC (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 0.8 0.4 80 0.2 60 0.15 40 0.1 0.05 mA 20 IB 0 0 50 100 150 Ambient Temperature Ta (°C) 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 1,000 15 10 1.2 5 mA 0.8 0.4 IB Collector Current IC (mA) 20 1.6 0 =0 Typical Transfer Characteristics Typical Output Characteristics 2.0 Collector Current IC (A) 0.25 VCE = 2 V 300 100 Ta = 75°C 30 25 10 –25 3 =0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V) 1 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 3 2SD1367 DC Current Transfer Ratio vs. Collector Current Saturation Voltage vs. Collector Current 30,00 Pusle VCE = 2 V Ta = 75°C Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) DC Current Transfer Ratio hFE 10,000 25 1,000 300 –25 100 30 10 1 3 10 30 100 300 Collector Current IC (mA) 1,000 3.0 VBE (sat) 1.0 0.3 lC = 10 lB 0.1 0.03 VCE (sat) 0.01 0.003 3 10 30 100 300 1,000 3,000 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 4 1,000 300 f = 1 MHz IE = 0 100 30 10 0.1 0.3 1.0 3 10 Collector to Base Voltage VCB (V) Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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