HITACHI 2SC2308

2SC458, 2SC2308
Silicon NPN Epitaxial
Application
• Low frequency amplifier
• Complementary pair with 2SA1029 and 2SA1030
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC458, 2SC2308
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC458
2SC2308
Unit
Collector to base voltage
VCBO
30
55
V
Collector to emitter voltage
VCEO
30
50
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
100
100
mA
Emitter current
IE
–100
–100
mA
Collector power dissipation
PC
200
200
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
2
2SC458, 2SC2308
Electrical Characteristics (Ta = 25°C)
2SC458
2SC2308
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
30
—
—
55
—
—
V
I C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
30
—
—
50
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
—
—
0.5
µA
VCB =18 V, IE = 0
Emitter cutoff current
I EBO
—
—
0.5
—
—
0.5
µA
VEB = 2 V, IC = 0
100
—
500
100
—
320
—
—
0.2
—
—
0.2
V
I C = 10 mA, IB = 1 mA
Base to emitter voltage VBE
—
0.67
0.75
—
0.67
0.75
V
VCE = 12 V, IC = 2 mA
Gain bandwidth product f T
—
230
—
—
230
—
MHz
VCE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
1.8
3.5
—
1.8
3.5
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
4
10
—
4
10
dB
VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 500 Ω
Small signal input
impedance
hie
—
16.5
—
—
16.5
—
kΩ
VCE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
hre
—
70
—
—
70
—
× 10 –6
Small signal current
trancefer ratio
hfe
—
130
—
—
130
—
Small signal output
admittance
hoe
—
11.0
—
—
11.0
—
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Note:
1
VCE(sat)
VCE = 12 V, IC = 2 mA
µS
1. The 2SC458 and 2SC2308 are grouped by h FE as follows.
B
C
D
2SC458
100 to 200
160 to 320
250 to 500
2SC2308
100 to 200
160 to 320
—
See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.
3
2SC458, 2SC2308
Noise Figure vs. Frequency
20
300
16
Noise Figure NF (dB)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
200
100
IC = 0.1 mA
Rg = 500 Ω
VCE = 6 V
12
8
4
0
50
100
150
Ambient Temperature Ta (°C)
0
30
100
300
1k
3k
Frequency f (Hz)
Noise Figure vs. Collector to Emitter Voltage
Noise Figure NF (dB)
8
IC = 0.1 mA
Rg = 500 Ω
f = 1kHz
6
4
2
0
1
4
2
5
10
20
Collector to Emitter Voltage VCE (V)
30
10k
30k
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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