2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5 V Collector current IC 0.7 A Collector peak current iC(peak) 1.0 A Collector power dissipation PC 500 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 15 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1.0 µA VCB = 20 V, IE = 0 Base to emitter voltage VBE — — 1.0 V VCE = 1 V, IC = 150 mA Collector to emitter saturation voltage VCE(sat) — 0.15 0.5 V I C = 500 mA, IB = 50 mA*2 DC current transfer ratio hFE*1 250 — 1200 Gain bandwidth product fT — 250 — Notes: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D E F 250 to 500 400 to 800 600 to 1200 2 VCE = 1 V, IC = 150 mA*2 MHz VCE = 1 V, IC = 150 mA 2SD655 Typical Output Characteristics 50 0.04 600 Collector Current IC (mA) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 400 200 0.035 40 0.03 0.025 30 0.02 20 0.015 0.01 10 0.005 mA IB = 0 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 0 50 100 150 Ambient Temperature Ta (°C) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 10,000 VCE = 1 V 300 DC Current Transfer Ratio hFE Collector Current IC (mA) 1,000 100 30 10 3 1 VCE = 1 V Pulse 3,000 1,000 300 100 30 10 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 1 3 10 30 100 300 Collector Current IC (mA) 1,000 3 2SD655 Gain Bandwidth Product vs. Collector Current 3,000 3.0 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB 1.0 0.3 0.1 0.03 0.01 0.003 3 10 30 100 300 1,000 3,000 Collector Current IC (mA) VCE = 1 V 1,000 300 100 30 10 3 0.3 1.0 3 10 30 100 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1 1 4 2 5 10 20 50 Collector to Base Voltage VCB (V) 300 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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