HITACHI 2SD1559

2SD1559
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1079
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3 kΩ
(Typ)
400 Ω
(Typ)
3
3
2SD1559
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
20
A
Collector peak current
I C(peak)
30
A
Base current
IB
3
A
100
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
100
—
—
V
I C = 0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
100
—
—
V
I C = 25 mA, RBE = ∞
Collector to emitter sustain
voltage
VCEO(sus)
100
—
—
V
I C = 200 mA, RBE = ∞*1
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
VEB = 50 mA, IC = 0
Collector cutoff current
I CBO
—
—
100
µA
VCB = 100 V, IE = 0
I CEO
—
—
1.0
mA
VCE = 80 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
Collector to emitter saturation
voltage
VCE(sat)1
—
—
2.0
V
Base to emitter saturatiopn
voltage
VBE(sat)1
—
—
2.5
V
Collector to emitter saturation
voltage
VCE(sat)2
—
—
3.0
V
Base to emitter saturation
voltage
VBE(sat)2
—
—
3.5
V
Turn on time
t on
—
1.0
—
µs
Storage time
t stg
—
9.0
—
µs
Fall time
tf
—
3.0
—
µs
Note:
2
1. Pulse test.
VCE = 3 V, IC = 10 A*1
I C = 10 A, IB = 20 mA*1
I C = 20 A, IB = 200 mA*1
I C = 10 A, IB1 = –IB2 = 20 mA
2SD1559
Maximum Collector Dissipation Curve
Area of Safe Operation
100 µs
ms
3
s
(T C
0m
=1
=2
1
)
5°C
Collector current IC (A)
=1
IC (max)
10
DC
40
PW
80
10 µs
iC (peak)
30
PW
Collector power dissipation Pc (W)
120
0.3
Ta = 25°C
1 shot pulse
0.1
0
50
100
Case temperature TC (°C)
1
150
3
10
30
100
300
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
20
2.5
3
DC current transfer ratio hFE
Collector current IC (A)
3.5
16
30,000
4
2
1.5
12
1
8
IB = 0.5 mA
4
0
TC = 25°C
1
2
3
4
Collector to emitter voltage VCE (V)
5
5°C
10,000
TC
3,000
=7
°C
–25
25°C
1,000
300
100
30
0.3
VCE = 3 V
Pulse
1.0
3
10
Collector current IC (A)
30
3
Switching Time vs. Collector Current
Saturation Voltage vs. Collector Current
10
10
tstg
500 200
3
3
VBE (sat)
Switching time t (µs)
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD1559
1.0
VCE (sat)
lC/lB = 200
0.3
500
0.1
0.03
0.01
0.3
ton
0.3
0.1
VCC = 30 V
IC = 500 IB1 = –500 IB2
Ta = 25°C
0.03
Ta = 25°C
Pulse
1.0
3
10
Collector current IC (A)
tf
1.0
0.01
0.3
30
1.0
3
10
Collector current IC (A)
Transient Thermal Resistance
Thermal resistance θj-c (°C/W)
10
3
0.1 to 100 s
1.0
0.3
0.1
00
o1
.1 t
ms
0
0.03
TC = 25°C
1 shot
0.01
0.1
1.0
0.1
1.0
Time t
4
10
100 (s)
10
100 (ms)
30
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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