HITACHI 2SC2545

2SC2545, 2SC2546, 2SC2547
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1083, 2SA1084 and 2SA1085
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2545, 2SC2546, 2SC2547
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC2545
2SC2546
2SC2547
Unit
Collector to base voltage
VCBO
60
90
120
V
Collector to emitter voltage
VCEO
60
90
120
V
Emitter to base voltage
VEBO
5
5
5
V
Collector current
IC
100
100
100
mA
Emitter current
IE
–100
–100
–100
mA
Collector power dissipation
PC
400
400
400
mW
Junction temperature
Tj
150
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
°C
2
2SC2545, 2SC2546, 2SC2547
Electrical Characteristics (Ta = 25°C)
2SC2545
2SC2546
2SC2547
Item
Symbol Min
Typ
Max
Min
Typ Max
Min
Typ Max
Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 60
—
—
90
—
—
120
—
—
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 60
—
—
90
—
—
120
—
—
V
IC = 1 mA,
RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO 5
—
—
5
—
—
5
—
—
V
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
—
—
0.1
—
—
0.1
—
—
0.1
µA
VCB = 50 V, IE = 0
Emitter cutoff current
IEBO
—
—
0.1
—
—
0.1
—
—
0.1
µA
VEB = 2 V, IC = 0
250
—
1200 250
—
1200
250
—
800
DC current transfer ratio hFE*
1
VCE = 12 V,
IC = 2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
0.2
—
—
0.2
—
—
0.2
V
IC = 10 mA,
IB = 1 mA
Base to emitter voltage
VBE
—
0.6
—
—
0.6
—
—
0.6
—
V
VCE = 12 V,
IC = 2 mA
Gain bandwidth product fT
—
90
—
—
90
—
—
90
—
MHz VCE = 12 V,
IC = 2 mA
Collector output
capacitance
Cob
—
3.0
—
—
3.0
—
—
3.0
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise voltage referred
input
en
—
0.5
—
—
0.5
—
—
0.5
—
nV/
√Hz
VCE = 6V,
IC = 10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
Note:
1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by hFE as follows.
D
E
F
2SC2545, 2SC2546
250 to 500
400 to 800
600 to 1200
2SC2547
250 to 500
400 to 800
—
3
2SC2545, 2SC2546, 2SC2547
Typical Output Characteristics
50
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
600
400
200
70
60
40
50
30
40
20
30
=0
.4
W
20
10
10 µA
0
100
150
50
Ambient Temperature Ta (°C)
4
Collector Current IC (mA)
10
5 µA
4
IB = 0
0
4
20
VCE = 12 V
15
8
16
Typical Transfer Characteristics
20
12
12
10
25
16
8
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
20
Collector Current IC (mA)
C
IB = 0
0
8
5
2
1.0
0.5
0.2
0.1
12
16
Collector to Emitter Voltage VCE (V)
4
P
20
0
0.2
0.4
0.6
0.8
Base to Emitter Voltage VBE (V)
1.0
2SC2545, 2SC2546, 2SC2547
Collector to Emitter Saturation Voltage VCE(sat) (V)
DC Current Transfer Ratio vs.
Collector Current
VCE = 12 V
Pulse
2,000
1,000
500
200
100
50
0.1 0.2
0.5 1.0 2
5 10 20
Collector Current IC (mA)
50 100
1.0
IC = 10 IB
0.5
0.2
0.1
0.05
0.02
0.01
50
2
5
10
20
Collector Current IC (mA)
1
100
Gain Bandwidth Product vs.
Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
2,000
10
IC = 10 IB
5
2
1.0
0.5
0.2
0.1
Gain Bandwidth Product fT (MHz)
Base to Emitter Saturation Voltage VBE(sat) (V)
DC Current Transfer Ratio hFE
5,000
Collector to Emitter Saturation Voltage
vs. Collector Current
VCE = 12 V
1,000
500
200
100
50
20
1
2
5
10
20
50
Collector Current IC (mA)
100
1
2
50
5
10
20
Collector Current IC (mA)
100
5
2SC2545, 2SC2546, 2SC2547
Contours of Constant Noise Figure
100
100
Signal Source Resistance Rg (kΩ)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
IE = 0
f = 1 MHz
50
20
10
5
2
1
0.5
30 V = 6 V
CE
f = 1 kHz
10
3
1.0
0.3
0.1
4
0.03
100
10
3
1.0
NF = 0.5 dB
1
2
4
6
10
0.01
0.01 0.03 0.1 0.3 1.0 3
10 30
Collector Current IC (mA)
6
100
Signal Source Resistance Rg (kΩ)
Signal Source Resistance Rg (kΩ)
VCE = 6 V
f = 120 Hz
30
0.03
100
Contours of Constant Noise Figure
Contours of Constant Noise Figure
0.1
6
10
0.01
0.01 0.03 0.1 0.3 1.0 3
10 30
Collector Current IC (mA)
1.0
2
5
10
20
50
Collector to Base Voltage VCB (V)
100
0.3
NF = 0.5 dB
1
2
VCE = 6 V
f = 10 Hz
30
10
3
1.0
0.3
0.1
NF = 0.5 dB
1 2 4 6 10
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3
10 30
Collector Current IC (mA)
100
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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