2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Collector power dissipation PC 1.25 1.25 W Junction temperature Tj 150 150 °C Storage temperature Tstg –45 to +150 –45 to +150 °C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25°C) 2SD1609 2SD1610 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 160 — — 200 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 160 — — 200 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 10 — — — µA VCB = 140 V, IE = 0 — — — — — 10 VCB = 160 V, IE = 0 60 — 320 60 — 320 VCE = 5 V, IC = 10 mA hFE2 30 — — 30 — — VCE = 5 V, IC = 1 mA Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 10 mA Collector to emitter saturation voltage — — 2 — — 2 V I C = 30 mA, IB = 3 mA Gain bandwidth product f T — 140 — — 140 — MHz VCE = 5 V, IC = 10 mA Collector output capacitance — 3.8 — — 3.8 — pF VCB = 10 V, IE = 0, f = 1 MHz DC current tarnsfer ratio hFE1* Note: 1 VCE(sat) Cob 1. The 2SD1609 and 2SD1610 are grouped by h FE1 as follows. B C D 60 to 120 100 to 200 160 to 320 Maximum Collector Dissipation Curve Typical Output Characteristics 1.0 0.5 0 2 20 Collector current IC (mA) Collector power dissipation PC (W) 1.5 50 100 Ambient temperature Ta (°C) 150 16 12 8 4 0 120 110 100 90 80 70 60 50 40 30 20 10 µA IB = 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 2SD1609, 2SD1610 DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 500 100 DC current transfer ratio hFE 20 10 –25 50 Ta = 7 5°C 25 Collector current IC (mA) VCE = 5 V 5 2 VCE = 5 V Pulse 200 Ta = 75°C 100 25 50 20 10 5 1 0 0.2 0.6 0.8 0.4 Base to emitter voltage VBE (V) 1 1.0 2 5 10 20 50 Collector current IC (mA) 100 Gain Bandwidth Product vs. Collector Current Saturation Voltage vs. Collector Current 5 500 Gain bandwidth product fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) –25 IC = 10 IB Pulse 2 VBE(sat) 1.0 0.5 Ta = –25°C 75 0.2 VCE(sat) 25 75 25 25°C 0.1 Ta = – 0.05 1 2 5 20 50 10 Collector current IC (mA) 100 VCE = 10 V 200 100 50 20 10 5 0.5 1.0 2 5 10 20 Collector current IC (mA) 50 3 2SD1609, 2SD1610 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 10 5 2 1.0 0.5 4 f = 1 MHz IE = 0 20 1 20 50 100 2 5 10 Collector to base voltage VCB (V) Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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