2SD1504 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SD1504 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5 V Collector current IC 0.5 A Collector peak current ic (peak) 1.0 A Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 15 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 20 V, IE = 0 250 — 1200 1 VCE = 1 V, IC = 150 mA*2 DC current transfer ratio hFE* Base to emitter voltage VBE — 0.65 — V VCE = 1 V, IC = 150 mA Collector to emitter saturation voltage VCE(sat) — 0.15 0.5 V I C = 500 mA, IB = 50 mA*2 VCE(sat) — 0.018 — V I C = 30 mA, IB = 3 mA Gain bandwidth product fT — 300 — MHz VCE = 1 V, IC = 50 mA On resistance ron — 0.5 — Ω I B = 2 mA Notes: 1. The 2SD1504 is grouped by h FE as follows. 2. Pulse test D E F 250 to 500 400 to 800 600 to 1200 2 2SD1504 Typical Output Characteristics 10 300 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 200 100 0 50 100 Ambient Temperature Ta (°C) 8 15.0 6 10.0 4 5.0 120 80 60 20 0 40 IB = 20 µA 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Collector Current IC (mA) 160 100 40 2 4 6 8 10 Collecter to Emitter Voltage VCE (V) 10 140 60 IB = 2.5 µA Typical Transfer Characteristics Typical Output Characteristics 100 80 7.5 2 0 150 12.5 8 VCE = 1 V 6 4 2 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 3 2SD1504 DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio hFE 300 100 VCE = 1 V Pulse 30 10 3 1 1 3 10 30 100 300 Collector current IC (mA) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 1,000 1,000 VBE(sut) 300 100 10 3 1 1 Gain Bandwidth Product vs. Collector Current 500 200 100 50 20 10 2 4 5 10 20 50 100 200 Collector Current IC (mA) 3 10 30 100 300 1,000 Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) VCE = 1 V VCE(sat) 30 1000 1,000 IC/IB = 10 Pulse 100 f = 1 MHz IE = 0 30 10 3 1 1 3 10 30 100 Collector to Base Voltage VCB (V) 2SD1504 On Resistance vs. Base Current 10 IN 3 kΩ OUT On Resistance ron (Ω) 3 kΩ 3 IB f = 10 kHz 1.0 0.3 0.1 0.1 0.3 1.0 3 Base Current IB (mA) 10 5 Unit: mm 2.2 Max 0.6 0.6 Max 0.45 ± 0.1 14.5 Min 1.8 Max 3.2 Max 4.2 Max 0.4 ± 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK — — 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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