2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7 V Collector current IC 5 A Collector peak current IC(peak) 10 A Base current IB 2.5 A 80 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. 2SC3322 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain voltage VCEO(sus) 800 — — V IC = 0.2 A, RBE = ∞, L = 100 mH VCEX(sus) 800 — — V IC = 4 A, IB1 = 1.5 A, IB2 = –0.8 A, VBE = –5.0 V, L = 180 µH, Clamped Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 10 mA, IC = 0 Collector cutoff current ICBO — — 100 µA VCB = 750 V, IE = 0 ICEO — — 100 µA VCE = 650 V, RBE = ∞ hFE1 15 — — DC current transfer ratio VCE = 5 V, IC = 0.5 A* hFE2 7 — — Collector to emitter saturation voltage VCE(sat) — — 1.0 V Base to emitter saturation voltage VBE(sat) — — 1.5 V Turn on time ton — — 1.0 µs Storage time tstg — — 3.0 µs Fall time tf — — 1.0 µs Note: 2 1. Pulse test VCE = 5 V, IC = 3 A* 1 1 IC = 1.5 A, IB = 0.3 A* 1 IC = 3 A, IB1 = 0.6 A, IB2 = –1.5 A, VCC ≅ 250 V 2SC3322 Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 120 80 40 0 50 100 Case Temperature TC (°C) 150 Area of Safe Operation Collector Current IC (A) µs 25 0 µs s µ s 5 0 m s 25 10 m 1 = on ati PW er ) Op 5°C DC = 2 (T C 10 i C (peak) IC (max) 1.0 0.1 0.01 Ta = 25°C, 1 Shot Pulse 0.001 1 3 10 30 100 300 1,000 Collector to emitter Voltage VCE (V) Collector Current Derating Rate Collector Current derating rate (%) 100 IS /B 80 Lim it A re a 60 40 20 0 50 100 Case temperature TC (°C) 150 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 1.0 s–10 10 m s 0.3 0.1 10 10 µs– ms 0.03 0.01 0.01 0.1 0.01 0.1 1.0 10 (s) 1.0 10 (ms) Time t 3 2SC3322 Reverse Bias Area of Safe Operation 10 600 V, 10 A Collector Current IC (A) 8 6 4 800 V, 4 A 2 850 V, 1.5 A IB2 = –0.8 A 0 0 200 400 600 800 1,000 Collector to emitter Voltage VCE (V) Collector to emitter voltage V (BR)CER (V) Collector to Emitter Voltage vs. Base to Emitter Resistance 1.000 IC = 1 mA 900 800 700 100 1k 10 k 100 k 1M Base to emitter resistance RBE (Ω) Typical Output Characteristics Collector Current IC (A) 5 4 3 2 1.0 A 0.8 A 0.6 A 0.4 A 0.2 A 0.1 A 1 0.05 A IB = 0 0 TC = 25°C 1 2 3 4 5 Collector to emitter Voltage VCE (V) Typical Transfer Characteristics 5 Collector Current IC (A) TC = 25°C VCE = 5 V 4 3 2 1 0 4 0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) 2SC3322 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 100 50 75°C 25°C 20 C T C = –25° 10 5 2 VCE = 5 V 1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) 10 Collector to emitter saturation voltage VCE (V) Collector to Emitter Saturation Voltage vs. Base Current 10 TC = 25°C 3 2.5 A 1.0 1.5 A 0.3 0.1 IC = 0.5 A 0.03 0.01 0.01 0.03 0.1 0.3 1.0 3 Base current IB (A) 10 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 10 3 1.0 VBE (sat) 0.3 0.1 0.03 VCE (sat) TC = 25°C l C = 5 lB 0.01 0.01 0.03 0.1 0.3 1.0 3 10 Collector current IC (A) 5 2SC3322 Switching Time vs. Collector Current 10 tstg Switching time t (µs) 3 1.0 tf 0.3 ton 0.1 0.03 IC = 5 IB1 = –2 IB2 ~ 250 V VCC = 0.01 0.01 0.03 0.1 0.3 1.0 3 10 Collector current IC (A) Switching Time vs. Case Temperature 5 Switching time t (µs) tstg 2 1.0 tf 0.5 ton 0.2 IC = 3 A IB1 = 0.6 A, IB2 = –1.5 A ~ 250 V VCC = 0.1 0.05 0 6 25 50 75 100 Case temperature TC (°C) 125 2SC3322 When using this document, keep the following in mind: 1. 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