2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SB566(K) 2SB566A(K) Unit Collector to base voltage VCBO –70 –70 V Collector to emitter voltage VCEO –50 –60 V Emitter to base voltage VEBO –5 –5 V Collector current IC –4 –4 A Collector peak current IC(peak) –8 –8 A 40 40 W 1 Collector power dissipation PC* Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at TC = 25°C. 2SB566(K), 2SB566A(K) Electrical Characteristics (Ta = 25°C) 2SB566(K) 2SB566A(K) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –70 — — –70 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –50 — — –60 — — V IC = –50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V IE = –10 µA, IC = 0 — — –1 — — –1 µA VCB = –50 V, IE = 0 60 — 200 60 — 200 VCE = –4 V, IC = –1 A hFE2 35 — — 35 — — VCE = –4 V, IC = –0.1 A Collector to emitter saturation voltage VCE(sat) — — –1.0 — — –1.0 V IC = –2 A, IB = –0.2 A Base to emitter saturation voltage VBE(sat) — — –1.2 — — –1.2 V IC = –2 A, IB = –0.2 A Gain bandwidth product fT — 7 — — 7 — MHz VCE = –4 V, IC = –0.5 A Turn on time ton — 0.3 — — 0.3 — µs VCC = –10.5 V IC = 10IB1 = –10IB2 = –0.5 A Turn off time toff — 3.0 — — 3.0 — µs Storage time tstg — 2.5 — — 2.5 — µs Collector cutoff current ICBO DC current tarnsfer ratio Note: hFE1* 1. The 2SB566(K) and 2SB566A(K) are grouped by hFE1 as follows. B C 60 to 120 100 to 200 2 1 2SB566(K), 2SB566A(K) Maximum Collector Dissipation Curve Area Safe Operation –10 pe n tio ra TC = 25°C –2 O 40 C Collector current IC (A) –5 IC max (Continuous) D Collector power dissipation PC (W) 60 –1.0 –0.5 20 (–50 V, –0.22 A) 2SB566 K –0.2 0 50 100 –0.1 –1 150 Case temperature TC (°C) –2 –5 –10 –20 –50 –100 Collector to emitter voltage VCE (V) Typical Transfer Characteristics Typical Output Characteristics –5 VCE = –4 V TC = 25°C –2 Collector current IC (A) –40 –3 –30 –2 –20 –10 mA –1 –1.0 –0.5 TC = 75 °C 25 –25 –70 –60 –50 –4 Collector current IC (A) –5 (–60 V, –0.15 A) 2SB566A K –0.2 –0.1 –0.05 –0.02 0 –2 –4 IB = 0 –6 –8 –10 –0.01 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current VCE = –4V 500 200 100 50 TC = 75°C 25°C –25°C 20 10 5 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector current IC (A) –5 –1.4 Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 1,000 –1.2 –1.0 –0.8 IC = 10 IB TC = 75°C 25°C –25°C –0.6 –0.4 –0.2 0 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –5 Collector current IC (A) 3 2SB566(K), 2SB566A(K) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 2SB566(K), 2SB566A(K) Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. 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