2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 2 1 ID 3 3 2SD2300 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6 V Collector current IC 5 A Collector peak current IC(peak) 6 A Collector surge current IC(surge) 16 A 50 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current ID 6 A Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 350 mA, IC = 0 Collector cutoff current ICES — — 500 µA VCE = 1500 V, RBE = 0 DC current transfer ratio hFE — — 20 Collector to emitter saturation voltage VCE(sat) — — 5 V IC = 4.5 A, IB = 1.2 A Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 4.5 A, IB = 1.2 A C to E diode forward voltage VECF — — 3.0 V IF = 6 A Fall time tf — — 1.0 µs ICP = 4 A, IB1 = 0.8 A, IB2 ≈ –1.5 A 2 VCE = 5 V, IC = 1 A 2SD2300 Area of Safe Operation Collector current IC (A) 20 f = 15.75 kHz Ta = 25°C (100 V, 16 A) 16 For picture tube arcing 12 8 4 (800 V, 3 A) 0.5 mA 800 1,200 1,600 2,000 400 Collector to emitter voltage VCE (V) 0 Maximum Collector Dissipation Curve Collector power dissipation PC (W) 60 40 20 0 50 100 Case temperature TC (°C) 150 Typical Output Characteristecs Collector current IC (A) 1 A 5 A 0.9 0.8 A 0.7 A 0.6 A 0.5 A 0.4 A 0.3 A 4 3 0.2 A 2 0.1 A 1 TC = 25°C 0 IB = 0 2 4 6 8 10 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 50 20 75°C 10 5 25°C TC = –25°C 2 VCE = 5 V Pulse 1 0.1 0.2 0.5 1.0 2 Collector current IC (A) 5 3 Collector to emitter saturation voltage VCE(sat) (V) 2SD2300 Collector to Emitter Saturation Voltage vs. Collector Current 3 2 IC = 3 IB Pulse 1.0 0.5 25°C 0.2 –25°C 0.1 0.05 0.1 TC = 75°C 0.2 0.5 1.0 Collector current IC (A) 3 5 Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 5 IC = 3 IB Pulse 2 TC = –25°C 1.0 25°C 0.5 75°C 0.2 Collector to emitter saturation voltage VCE(sat) (V) 0.1 4 0.2 0.5 1.0 2 Collector current IC (A) 5 Collector to Emitter Saturation Voltage vs. Base Current 10 TC = 25°C Pulse 8 6 IC = 2 A 4 A 5 A 4 2 0 0.1 0.2 0.5 1.0 2 Base current IB (A) 5 2SD2300 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5