2SC4880 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.5 µs • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1. Base 2. Collector 3. Emitter 1 2 3 2SC4880 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCEO 900 V Emitter to base voltage VEBO 6 V Collector current IC 12 A Collector surge current IC(surge) 20 A 100 W 1 Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 900 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 mA, IC = 0 Collector cutoff current ICES — — 500 µA VCE = 1700 V, RBE = 0 DC current transfer ratio hFE — — 35 Collector to emitter saturation voltage VCE(sat) — — 5 V IC = 10 A, IB = 2.5 A Base to emitter saturation voltage VBE(sat) — — 1.5 V IC = 10 A, IB = 2.5 A Fall time tf — — 0.5 µs ICP = 8 A, IB1 = 1.4 A IB2 ≅ –2.5 A, fH = 31.5 kHz 2 Symbol VCE = 5 V, IC = 1 A 2SC4880 Maximum Collector Power Dissipation Curve Pc (W) 160 Collector Power Dissipation 120 80 40 0 50 100 Case Temperature 150 Tc (°C) 200 Maximum Safe Operation Area Collector Current I C (A) 20 Ta = 25 °C (100 V, 20 A) 16 For picture tube arcing 12 8 4 (900 V, 3 A) 0.5 mA 0 800 1200 1600 2000 400 Collector to Emitter Voltage V CE (V) Typical Output Characteristics 10 2A 1.4 A 1.2 A 1A 0.8 A I C (A) Collector Current 1.8 A 1.6 A 0.6 A 5 0.4 A 0.2 A Tc = 25 °C 0 IB = 0 5 Collector to Emitter Voltage 10 V CE (V) 3 2SC4880 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio h FE 100 50 Tc = 75 °C 20 25 °C 10 –25 °C 5 2 V CE = 5 V 1 0.05 0.1 0.2 0.5 1 2 5 Collector Current I C (A) 10 Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 4 10 5 IC / IB = 4 2 1 0.5 Tc = –25 °C 0.2 25 °C 0.1 0.05 0.1 75 °C 0.2 0.5 1 2 5 Collector Current I C (A) 10 2SC4880 Base to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturetion Voltage V BE(sat) (V) 10 5 Tc = –25 °C 2 25 °C 1 0.5 75 °C 0.2 0.1 0.1 I C / IB = 4 0.2 0.5 1 2 5 Collector Current I C (A) 10 Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Base Current 10 8 IC = 8 A 6 10 A 4 12 A 2 0 0.1 Tc = 25 °C 0.2 0.5 1 Base Current 2 5 IB (A) 10 5 2SC4880 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 6 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071