2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –400 V Gate to source voltage VGSS ±20 V Drain current ID –2 A Drain peak current I D(pulse) –4 A Body to drain diode reverse drain current I DR –2 A 1 Channel dissipation Pch* 40 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –400 — — V I D = –10 mA, VGS = 0 Gate to source leak current I GSS — — ±1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current I DSS — — –1 mA VDS = –320 V, VGS = 0 Gate to source cutoff voltage VGS(off) –2.0 — –5.0 V I D = –1 mA, VDS = –10 V Static drain to source on state RDS(on) — 5 7 Forward transfer admittance |yfs| 0.4 0.7 — S I D = –1 A, VDS = –20 V*1 Input capacitance Ciss — 520 — pF VDS = –10 V, VGS = 0, Output capacitance Coss — 110 — pF f = 1 MHz Reverse transfer capacitance Crss — 15 — pF Turn-on delay time t d(on) — 10 — ns I D = –2 A, VGS = –15 V, Rise time tr — 25 — ns RL = 15 Turn-off delay time t d(off) — 45 — ns Fall time tf — 35 — ns Body to drain diode forward voltage VDF — –0.8 — V I F = –1 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = –1 A, VGS = 0, diF/dt = 100 A/µs I D = –1 A, VGS = –15 V*1 resistance Note: 2 1. Pulse test 2SJ117 Waveforms Switching Time Test Circuit Vin Vin Monitor 10% Vout Monitor 90% D.U.T RL 50 Ω Vin –15 V 6 VDD . =. –30 V 90% 90% Vout 10% td (on) tr 10% td (off) tf