2SK2278 L , 2SK2278 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 High breakdown voltage (VDSS = 1500 V) High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 1 1 3 1. 2. 3. 4. 2 3 Gate Drain Source Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 1500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 7 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2278 L , 2SK2278 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±1 µA VGS = ±20 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 500 µA VDS = 1200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 9 12 Ω ID = 2 A VGS = 15 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A VDS = 20 V * ——————————————————————————————————————————— Input capacitance Ciss — 990 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 125 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 17 — ns ID = 2 A ———————————————————————————————— Rise time tr — 70 — ns ———————————————————————————————— Turn–off delay time td(off) — 110 — ns VGS = 10 V RL = 15 Ω ———————————————————————————————— Fall time tf — 60 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 1750 — µs IF = 2 A, VGS = 0, diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1317. 2SK2278 L , 2SK2278 S Power vs. Temperature Derating Channel Dissipation Pch (W) 120 80 40 0 50 100 Case Temperature Tc (°C) 150