2SK1621 L , 2SK1621 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 3 1 2, 4 S type 2 3 L type 1. Gate 2. Drain 3. Source 4. Drain 1 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 250 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 7 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 28 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 7 A ——————————————————————————————————————————— Channel dissipation Pch** 50 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK1621 L , 2SK1621 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state resistance RDS(on) — 0.40 0.55 Ω ID = 4 A, VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.7 4.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 820 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 370 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 12 — ns ———————————————————————————————— Rise time tr — 48 — ns ID = 4 A, VGS = 10 V, RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body to drain diode forward voltage VDF — 1.2 — V IF = 7 A, VGS = 0 ——————————————————————————————————————————— Body to drain diode reverse recovery time trr — 400 — ns IF = 7 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK741. 2SK1621 L , 2SK1621 S Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 50 100 Case Temperature TC (°C) 150