HITACHI 2SK1621S

2SK1621 L , 2SK1621 S
Silicon N-Channel MOS FET
Application
LDPAK
High speed power switching
Features
1
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC
converter and motor driver
2
3
1
2, 4
S type
2
3
L type
1. Gate
2. Drain
3. Source
4. Drain
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
250
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
7
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
28
A
———————————————————————————————————————————
Body to drain diode reverse drain current
IDR
7
A
———————————————————————————————————————————
Channel dissipation
Pch**
50
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at TC = 25 °C
2SK1621 L , 2SK1621 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
———————————————————————————————————————————–
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
250
µA
VDS = 200 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
2.0
—
4.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static Drain to source on state
resistance
RDS(on)
—
0.40
0.55
Ω
ID = 4 A, VGS = 10 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
2.7
4.5
—
S
ID = 4 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
820
—
pF
VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
—
370
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
115
—
pF
———————————————————————————————————————————
Turn-on delay time
td(on)
—
12
—
ns
————————————————————————————————
Rise time
tr
—
48
—
ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
————————————————————————————————
Turn-off delay time
td(off)
—
70
—
ns
————————————————————————————————
Fall time
tf
—
50
—
ns
———————————————————————————————————————————
Body to drain diode forward
voltage
VDF
—
1.2
—
V
IF = 7 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
recovery time
trr
—
400
—
ns
IF = 7 A, VGS = 0,
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
See characteristic curves of 2SK741.
2SK1621 L , 2SK1621 S
Power vs. Temperature Derating
Channel Dissipation Pch (W)
60
40
20
0
50
100
Case Temperature TC (°C)
150