HAT2054M Silicon N Channel Power MOS FET Power Switching ADE-208-756B(Z) Preliminary 3rd. Edition December 1998 Features • • • • Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 3 G 3 2 1 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V 6.3 A 25.2 A 6.3 A 2.0 W 1.05 W Drain current ID* 2 1 Drain peak current I D(pulse) * Body-drain diode reverse drain current Channel dissipation I DR* 2 Pch (pulse)* 2 Pch (continuous) * 3 Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±20V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10V, I D = 1mA Static drain to source on state RDS(on) — 26 31 mΩ I D = 3A, VGS = 10V *1 resistance RDS(on) — 40 52 mΩ I D = 3A, VGS = 4.5V *1 Forward transfer admittance |yfs| 4 7 — S I D = 3A, VDS = 10V *1 Input capacitance Ciss — 620 — pF VDS = 10V Output capacitance Coss — 170 — pF VGS = 0 Reverse transfer capacitance Crss — 110 — pF f = 1MHz Turn-on delay time t d(on) — 13 — ns VGS = 10V, ID = 3A Rise time tr — 90 — ns RL = 3.3Ω Turn-off delay time t d(off) — 50 — ns Fall time tf — 40 — ns Body–drain diode forward voltage VDF — 0.95 — V IF = 6.3A, VGS = 0 *1 Body–drain diode reverse recovery time t rr — (50) — ns IF = 6.3A, VGS = 0 diF/ dt =20A/µs Note: 2 1. Pulse test HAT2054M Package Dimensions Unit: mm + 0.10 1.0 1.0 2.8 ± 0.2 0.6 0.15 – 0.05 0 ~ 0.1 0.6 1.6 ± 0.15 0.3 ± 0.1 0.9 ± 0.1 0.2 2.95 ± 0.15 Hitachi Code EIAJ JEDEC TSOP-6 - 3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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