RENESAS 2SJ575

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
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2SJ575
Silicon P Channel MOS FET
High Speed Switching
ADE-208-740B (Z)
3rd.Edition.
June 1999
Features
• Low on-resistance
R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA)
R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
1
D
3
2
2
1. Source
2. Gate
3. Drain
G
S
1
2SJ575
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
-100
mA
-400
mA
-100
mA
400
mW
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
-30
—
—
V
I D = -100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±16 V, V DS = 0
Zero gate voltege drain
current
I DSS
—
—
-1
µA
VDS = -30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
-1.3
—
-2.3
V
I D = -10µA, VDS = -5 V
Static drain to source on state RDS(on)
—
2.8
3.3
Ω
ID = -50 mA,VGS = -10 V Note 3
resistance
RDS(on)
—
5.7
7.9
Ω
ID = -50 mA,VGS = -4 V Note 3
Forward transfer admittance
|yfs|
68
105
—
mS
ID = -50 mA, V DS = -10 V Note 3
Input capacitance
Ciss
—
25
—
pF
VDS = -10 V
Output capacitance
Coss
—
20
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
8
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
10
—
ns
I D = -50mA, VGS = -10 V
Rise time
tr
—
15
—
ns
RL = 200Ω
Turn-off delay time
t d(off)
—
40
—
ns
Fall time
tf
—
45
—
ns
Note:
2
3. Pulse test
4. Marking is AP
2SJ575
Main Characteristics
Power vs. Temperature Derating
-5
400
200
50
100
150
200
Ambient Temperature Ta ( °C)
-0.2
-0.1
-0.02
-0.01
=
(1 10 m
sh s
Op
ot
er
)
at
ion
Ta=25 °C
-5 -10 -20
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
-0.5
I D (A)
-5V
-0.3
-4 V
-0.1
25 °C
-0.4
75 °C
-0.3
Tc = –25 °C
-0.2
-0.1
V DS = -10 V
Pulse Test
VGS = -3 V
0
-50
Value on the alumina ceramic boad (12.5x20x0.7mm)
Drain Current
I D (A)
Drain Current
Operation in this area
is limited by RDS(on)
-0.0005
-0.05 -0.1 -0.2 -0.5 -1.0 -2
Pulse Test
-0.2
DC
-0.005
Typical Output Characteristics
-7 V -6 V
-0.4
PW
-0.05
*Value on the alumina ceramic boad (12.5x20x0.7mm)
-0.5
10 µs
100 µs
1 ms
-0.5
-0.002
-0.001
0
Mavimum Safe Operation Area
-2
-1.0
I D (A)
600
Drain Current
Channel Dissipation
*Pch (mW)
800
-2
-4
-6
Drain to Source Voltage
-8
VDS (V)
-10
0
-2
-4
-6
Gate to Source Voltage
-8
-10
VGS (V)
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
-0.8
-0.6
I D = -100mA
-0.4
-50m A
-0.2
Static Drain to Source on State Resistance
R DS(on) ( )
0
-6
-2
-4
Gate to Source Voltage
-8
-10
I D = -10m A, -50m A
-100m A
VGS = -4 V
6
-10m A, -50m A, -100m A
-10 V
2
0
–40
Pulse Test
0
40
80
Case Temperature
4
Pulse Test
20
10
VGS = -4 V
5
-10V
2
VGS (V)
10
4
50
0.5
-0.01
Static Drain to Source on State
Resistance vs. Temperature
8
Static Drain to Source on State
Resistance vs. Drain Current
1.0
-10m A
120
Tc
( °C)
160
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
-1.0
Static Drain to Source on State Resistance
R DS(on) ( )
2SJ575
-0.05
I D (A)
-0.1
Typical Transfer Characteristics
0.5
0.2
-0.02
Drain Current
V DS = -10 V
Pulse Test
Tc = –25 °C
0.1
25 °C
0.05
75 °C
0.02
0.01
0.005
-0.01
-0.02
-0.05
Drain Current I D (A)
-0.1
2SJ575
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
f = 1 MHz
50
20
Ciss
Coss
10
5
Crss
2
500
200
100
1
-10
-20
-30
-40
-50
Drain to Source Voltage VDS (V)
tf
50
t d(off)
tr
20
10
t d(on)
5
2
0
Switching Characteristics
1000
Switching Time t (ns)
Capacitance C (pF)
100
1
-0.01
V GS = -4 V, VDD = -10 V
PW = 5 µs, duty < 1 %
-0.02
-0.05
Drain Current
-0.1
I D (A)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
-0.5
-0.4
V GS = 0,5 V
-0.3
-5 V
-0.2
-10 V
-0.1
Pulse Test
0
-0.4
-0.8
-1.2
Source to Drain Voltage
-1.6
-2.0
VSD (V)
5
2SJ575
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
50
V DD
= –10 V
Vout
td(on)
6
90%
90%
10%
10%
tr
td(off)
tf
2SJ575
Package Dimensions
As of January, 2001
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MPAK
—
Conforms
0.011 g
7
2SJ575
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Semiconductor & Integrated Circuits.
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:
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
8