To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B (Z) 3rd.Edition. June 1999 Features • Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 1 D 3 2 2 1. Source 2. Gate 3. Drain G S 1 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain current ID -300 mA -1.2 A -300 mA 400 mW Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -30 — — V I D = -100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±5 µA VGS = ±16 V, V DS = 0 Zero gate voltege drain current I DSS — — -1 µA VDS = -30 V, VGS = 0 Gate to source cutoff voltage VGS(off) -1.3 — -2.3 V I D = -10µA, VDS = -5 V Static drain to source on state RDS(on) — 1.1 1.3 Ω ID = -150 mA,VGS = -10 V Note 3 resistance RDS(on) — 2.2 3.1 Ω ID = -150 mA,VGS = -4 V Note 3 Forward transfer admittance |yfs| 195 300 — mS ID = -150 mA, VDS = -10 V Note 3 Input capacitance Ciss — 50 — pF VDS = -10 V Output capacitance Coss — 40 — pF VGS = 0 Reverse transfer capacitance Crss — 15 — pF f = 1 MHz Turn-on delay time t d(on) — 20 — ns I D = -150 mA, VGS = -10 V Rise time tr — 50 — ns RL = 66.6 Ω Turn-off delay time t d(off) — 110 — ns Fall time tf — 105 — ns Note: 2 3. Pulse test 4. Marking is BP 2SJ574 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area -5 400 200 0 50 100 150 Ambient Temperature 200 -1.0 -0.02 -0.01 -0.005 DC = (1 10 m sh s Op ot er ) at ion Operation in this area is limited by RDS(on) -0.002 -0.001 Ta=25 °C -0.0005 -0.05 -0.1 -0.2 -0.5 -1.0 -2 -5 -10 -20 Drain to Source Voltage Typical Transfer Characteristics -1.0 Pulse Test I D (A) -0.8 -0.6 -4 V -0.4 -0.2 25 °C -0.8 75 °C -0.6 Tc = –25 °C -0.4 -0.2 V DS= -10 V Pulse Test VGS = -3V 0 -50 VDS (V) Value on the alumina ceramic board.(12.5x20x0.7mm) Drain Current I D (A) PW -0.2 -0.1 -0.05 Typical Output Characteristics -7 V -6 V -5 V Drain Current -0.5 Ta ( °C) *Value on the alumina ceramic board.(12.5x20x0.7mm) 10 µs 100 µs 1 ms -2 -1.0 I D (A) 600 Drain Current Channel Dissipation *Pch (mW) 800 -2 -4-6 Drain to Source Voltage -8 VDS (V) -10 0 -2 -4 -6 Gate to Source Voltage -8 -10 VGS (V) 3 Drain to SOurce Saturation Voltage vs. Gate to Source Voltage Pulse Test -0.8 -0.6 I D = -300mA -0.4 -150mA -0.2 -50m A 0 -2 -4 -6 Static Drain to Source on State Resistance R DS(on) ( ) Gate to Source Voltage 5 -10 VGS = -4V 2 -50m A, -150m A -10V 1 -50m A, -150m A, -300m A Pulse Test 0 40 80 Case Temperature Pulse Test 20 10 -4 V 5 2 VGS = -10 V 0.05 -0.1 Static Drain to Source on State Resistance vs. Temperature I D = -300m A 3 50 VGS (V) 4 0 –40 4 -8 Static Drain to Source on State Resistance vs. Drain Current 1.0 120 Tc ( °C) 160 Forward Transfer Adimittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) -1.0 Static Drain to Source on State Resistance R DS(on) ( ) 2SJ574 -0.2 Drain Current -0.5 I D (A) -1.0 Forward Transfer Admittance vs. Drain Current 5 V DS = -10 V Pulse Test 2 1.0 Tc = –25 °C 0.5 25 °C 0.2 75 °C 0.1 0.05 -0.1 -.0.2 Drain Current -0.5 I D (A) -1.0 2SJ574 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 50 Capacitance C (pF) Switching Characteristics Coss 20 10 Crss 5 2 1000 500 Swicthing Time t (ns) 100 200 100 t d(off) tf 50 0 -10 -20 -30 -40 Drain to Source Voltage VDS -50 (V) t d(on) 10 5 2 1 tr 20 1 -0.1 V GS = -4 V, V DD = -10 V PW = 5 µs, duty < 1 % -0.2 Drain Current -0.5 -1.0 I D (A) Reverse Drain Current vs. Source to Drain Voltage -0.5 Reverse Drain Current I DR (A) V GS = 0,5V -0.4 -5 V -0.3 -10 V -0.2 -0.1 Pulse Test 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 VSD -2.0 (V) 5 2SJ574 Switching Time Test Circuit Waveforms Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% Vin -10 V 50 V DD = –10 V Vout td(on) 6 90% 90% 10% 10% tr td(off) tf 2SJ574 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK — Conforms 0.011 g 7 2SJ574 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8