HA22032T GaAs MMIC Down Converter for Micro Wave Application ADE-207-259 (Z) 1st. Edition May 1998 Features • • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (3V, 9 mA typ.) Low noise (2 dB typ. @1.5 Ghz) High power gain (26 dB typ. @1.5 GHz) Built–in matching circuits (50 Ω) Small surface mount package (TSSOP-8) Outline TTP-8D This document may, wholly or partially, be subject to change without notice. This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested. HA22032 Pin Arrangement 8 7 6 5 HA32 Mark type 8A1 Weekly code(variable) Monthly code(variable) Yearly code(variable) HA32 8A1 1 2 3 4 Top View Pin No. Pin name Function 1 Vddlo Power supply (Lo) 2 Vddln Power supply (LNA) 3 GND Ground 4 RF in RF input 5 Cs Bypath capacitor (>100 pF) 6 IF out IF output 7 GND Ground 8 Lo in Local input 2 HA22032 Block Diagram 2.7nH Vdd * RF in 1.5pF 1 8 2 7 3 6 4 5 1.5pF Lo in 5pF IF out 390nH 220nH 6.8nH * * Vdd *:1000+15pF 3 HA22032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Supply voltage Vdd 5 V Maximum current Idd 15 mA Power dissipation Pd 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +125 °C Operation temperature Topr –20 to +70 °C Maximum input power Pin max +18 dBm Electrical Characteristics (Ta = 25°C, Vdd = 3V) Item Symbol Min Typ Max Unit Test Conditions Quiescent current Idd 5 9 12 mA No signal Power gain PG 23 26 29 dB f = 1489 Mhz, fLo = 1619 Mhz, Plo = –15 dBm, IF = 130 Mhz, Pin = –30dBm Noise figure NF — 2 3 dB f = 1489 Mhz, fLo = 1619 Mhz, Plo = –15 dBm, IF = 130 MHz Typical Performance (Ta = 25°C, Vdd = 3V) Item Symbol Typ Unit Test Conditions VSWR (input) VSWR in 2 — f = 1.489 GHz 3rd order inter-cept point IP3o +4 dBm f = 1.489 GHz, fud =1.490 Ghz, Pin = –30 dBm, fLo = 1.619 Ghz, Plo = –15 dBm 4 HA22032 27 2.5 CG 26 25 2 NF 24 23 1400 1450 1500 1550 1.5 1600 8 6 3rd order inter-cept point(out) vs. Frequency Vdd = 3V Pin = –30dBm IF = 130MHz PLo = –15dBm Ta = +25°C 2 signals input 4 2 0 1400 1450 Frequency f (MHz) 1550 Conversion gain,3rd order inter-cept point vs. Input power 6 29 VSWR 2 1.5 Lo 1 1475 1480 1485 1490 1495 1500 1505 Frequency(RF) RF (MHz) 1605 1610 1615 1620 1625 1630 1635 Conversion gain CG (dB) Vdd = 3V Ta = +25°C RF 1600 Frequency f (MHz) VSWR vs. Frequency 2.5 1500 CG 28 5 IP3o 27 4 26 3 25 2 Vdd = 3V f = 1489MHz fLo = 1619MHz 1 PLo = –15dBm Ta = +25°C 2 signals input 0 -35 -30 -35 -20 24 23 -55 -55 -45 -40 3rd order inter-cept point IP3o (dBm) 28 3 Vdd = 3V Pin = –30dBm IF = 130MHz PLo = –15dBm Ta = +25°C Noise figure NF (dB) Conversion gain CG (dB) 29 Conversion gain,Noise figure vs.Frequency 3rd order inter-cept point IP3o (dBm) Main Characteristics Frequency f (MHz) Frequency(Lo) Lo (MHz) 5 Conversion gain,Noise figure vs. Supply voltage f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15 dBm Ta = +25°C 28 3 CG 2.5 27 26 2 25 NF 24 1.5 23 2 2.5 3 3.5 4 4.5 Noise figure NF (dB) Conversion gain CG (dB) 29 3rd order inter-cept point IP3o (dBm) HA22032 3rd order inter-cept point vs. Supply voltage 8 f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15dBm Ta = +25°C 2 signals input 6 4 2 0 2 5 VSWR vs. Supply voltage 3.5 4 4.5 5 Quiescent current vs. Supply voltage 12 Quiescent current Idd (mA) RF = 1489 MHz Lo = 1619 MHz Ta = +25°C RF VSWR 2 1.5 Lo Ta = +25°C 11 10 9 8 7 6 5 1 2 2.5 3 3.5 4 4.5 Supply voltage Vdd (V) 6 3 Supply voltage Vdd (V) Supply voltage Vdd (V) 2.5 2.5 5 2 2.5 3 3.5 4 4.5 Supply voltage Vdd (V) 5 Conversion gain CG (dB) 29 Vdd = 3 V f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15 dBm CG 28 3 2.5 27 26 25 2 NF 24 1.5 23 -25 0 25 50 Noise figure NF (dB) Conversion gain,Noise figure vs. Ambient temperature 3rd order inter-cept point IP3o (dBm) HA22032 8 6 3rd order inter-cept point vs. Ambient temperature Vdd = 3 V f = 1489 MHz Pin = –30 dBm IF = 130 MHz PLo = –15 dBm 2 signals input 4 2 0 -25 75 25 50 75 Ambient Temperature Ta (°C) Ambient Temperture Ta (°C) Quiescent vs. Ambient temperature VSWR vs. Ambient temperature 12 Vdd = 3V RF = 1489 MHz Lo = 1619 MHz Quiescent current Idd (mA) 2.5 0 RF VSWR 2 1.5 Lo Vdd = 3V 11 10 9 8 7 6 5 1 -25 0 25 50 Ambient temperature Ta (°C) 75 -25 0 25 50 75 Ambient temperature Ta (°C) 7 HA22032 27 2.5 CG 26 2 25 NF 24 1.5 23 -50 -25 -20 -15 -10 Local power PLo (dBm) 8 -5 10 3rd inter-cept point IP3o (dBm) 28 3 Vdd = 3V f = 1489 MHz Pin = –30 dBm IF = 130 MHz Ta = +25°C Noise figure NF (dB) Conversion gain CG (dB) 29 Conversion gain,Noise figure vs. Local power 5 3rd order inter-cept point vs. Local power Vdd = 3 V f = 1489 MHz Pin = –30 dBm IF = 130 MHz Ta = +25°C 2 signals input 0 -5 -50 -25 -20 -15 -10 Local power PLo (dBm) -5 HA22032 Package Dimentions Unit: mm 4.40 3.00 3.30 Max 8 5 1 4 0.65 0.22 +0.08 –0.07 0.20 ± 0.06 1.0 0.13 M 6.40 ± 0.20 Dimension including the plating thickness Base material dimension 0.07 +0.03 –0.04 0.10 0.17 ± 0.05 0.15 ± 0.04 1.10 Max 0.805 Max* 0° – 8° 0.50 ± 0.10 Note: Include Mold Flash Hitachi Code JEDEC EIAJ Weight (reference value) TTP-8D — — — 9 HA22032 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay. 2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items. 10 HA22032 Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 01628-585000 Fax: 01628-585160 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 11