3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate 1 to source voltage VG1S –4 V Gate 2 to source voltage VG2S –4 V Drain current ID 18 mA Channel power dissipation Pch 100 mW Channel temperature Tch 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate 1 to cutoff current I G1SS — — –20 µA VG1S = –4 V VG2S = VDS = 0 Gate 2 to cutoff current I G2SS — — –20 µA VG2S = –4 V VG1S = VDS = 0 Gate 1 to source cutoff voltage VG1S(off) –0.2 — –1.5 V VDS = 3 V, VG2S = 0 I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) –0.2 — –1.5 V VDS = 3 V, VG1S = 0 I D = 100 µA Zero gate voltege drain current I DSS 25 40 60 mA VDS = 3 V, VG1S = 0 VG2S = 0 Forward transfer admittance |yfs| 30 40 — mS VDS = 3 V, VG2S = 0 I D = 5 mA, f = 1 kHz Power gain PG 18 21 — dB VDS = 3 V, VG2S = 0 Noise figure NF — 1.25 1.5 dB I D = 5 mA, f = 900 MHz Power gain PG — 20 — dB VDS = 1.5 V, VG2S = 0 Noise figure NF — 1.3 — dB I D = 3 mA, f = 900 MHz Note: Marking is “XV–” 2 3SK309 Main Characteristics Maximum Channel Power Dissipation Curve –0.4 V –0.5 V Drain Current ID (mA) Channel Power Dissipation Pch (mW) Typical Output Characteristics 20 200 150 100 50 16 –0.6 V Pulse Test –0.7 V 12 8 –0.8 V 4 –0.9 V VG1S = –1 V 0 0 50 100 150 200 Ambient Temperature Ta (°C) Drain Current vs. Gate1 to Source Voltage VDS = 3 V Drain Current ID (mA) 16 12 –0.2 V –0.4 V –0.6 V 8 4 0 –2.0 20 0V –0.8 V VG2S = –1 V –1.6 –1.2 –0.8 –0.4 0 Gate1 to Source Voltage VG1S (V) Drain Current ID (mA) 20 1 2 3 4 Drain to Source Voltage VDS (V) 5 Drain Current vs. Gate2 to Source Voltage VDS = 3 V 16 0V –0.2 V –0.4 V 12 –0.6 V 8 4 0 –2.0 –0.8 V VG1S = –1 V –1.6 –1.2 –0.8 –0.4 0 Gate2 to Source Voltage VG2S (V) 3 Forward Transfer Admittance vs. Gate1 to Source Voltage 100 VDS = 3 V f = 1 kHz 80 0V 60 –0.2 V –0.4 V 40 –0.6 V 20 –0.8 V VG2S = –1 V 0 –1.2 –0.8 –0.4 0 –2.0 –1.6 Gate1 to Source Voltage VG1S (V) 25 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) 3SK309 Forward Transfer Admittance vs. Drain Current 100 80 60 40 20 0 Power Gain vs. Drain Current VDS = 3 V VG2S = 0 f = 1 kHz 2.0 4 8 12 16 Drain Current ID (mA) 20 Noise Figure vs. Drain Current NF (dB) 20 V DS = 1.5 V 15 Noise Figure Power Gain PG (dB) 3V 10 5 1.6 V DS = 1.5 V 1.2 0.8 0.4 V G2S = 0 f = 900 MHz 0 4 4 8 12 16 Drain Current I D (mA) 3V V G2S = 0 f = 900 MHz 20 0 4 8 12 16 Drain Current I D (mA) 20 3SK309 Power Gain vs. Drain to Source Voltage Noise Figure vs. Drain to Source Voltage 25 2.0 5 mA 1.6 ID = 3 mA Noise Figure NF (dB) Power Gain PG (dB) 20 15 10 5 3 mA 1.2 0.8 0.4 VG2S = 0 f = 900 MHz 0 1 3 4 5 2 Drain to Source Voltage VDS (V) VG2S = 0 f = 900 MHz 6 0 5 0 –1 VG1S is fixed for ID = 5 mA at VG2S = 0 VDS = 3 V f = 900 MHz –0.8 –0.6 –0.4 –0.2 0 Gate2 to Source Voltage VG2S (V) Gain Reduction GR (dB) Power Gain PG (dB) 15 6 50 25 20 2 1 3 4 5 Drain to Source Voltage VDS (V) Gain Reduction vs. Gate2 to Source Voltage Power Gain vs. Gate2 to Source Voltage 10 ID = 5 mA 40 30 VG1S is fixed for ID = 5 mA at VG2S = 0 VDS = 3 V f = 900 MHz 20 10 0 –1.5 –0.5 0 0.5 1.0 –1.0 Gate2 to Source Voltage VG2S (V) 5 3SK309 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency Scale: 1 / div. 90° 1.5 .6 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .6 .8 1 .4 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –90° Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50Ω 100 to 2000 MHz (100 MHz step) Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50Ω 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.01 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50Ω 100 to 2000 MHz (100 MHz step) 6 –2 –.6 –.8 –1 –1.5 Test Condtion: VDS = 3 V , VG2S = 0 V ID = 5 mA , Zo = 50Ω 100 to 2000 MHz (100 MHz step) 3SK309 Sparameter (VDS = 3 V, VG2S = 0, ID = 5 mA, Zo = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.999 –2.8 3.29 176.7 0.00167 95.2 0.963 –0.9 200 0.997 –5.9 3.27 173.1 0.00302 89.0 0.963 –2.2 300 0.995 –9.4 3.29 169.0 0.00394 80.5 0.961 –3.5 400 0.992 –12.3 3.26 165.8 0.00506 83.7 0.959 –5.0 500 0.981 –15.2 3.23 161.9 0.00703 80.8 0.957 –6.3 600 0.968 –18.9 3.22 158.3 0.00797 78.1 0.955 –8.0 700 0.956 –21.8 3.20 154.4 0.00911 76.9 0.953 –9.2 800 0.949 –24.5 3.15 151.3 0.0104 77.1 0.949 –10.6 900 0.935 –27.6 3.14 147.4 0.0114 73.2 0.946 –12.0 1000 0.922 –30.7 3.12 143.7 0.0123 72.1 0.942 –13.5 1100 0.912 –33.5 3.06 140.3 0.0137 71.9 0.939 –14.7 1200 0.895 –36.2 3.03 136.7 0.0139 70.8 0.935 –16.0 1300 0.873 –38.7 2.97 133.3 0.0150 68.5 0.931 –17.3 1400 0.860 –41.4 2.93 130.1 0.0161 68.5 0.926 –18.6 1500 0.838 –43.8 2.89 126.9 0.0162 67.2 0.922 –20.2 1600 0.822 –45.6 2.85 123.6 0.0171 66.6 0.918 –21.5 1700 0.807 –48.3 2.83 120.5 0.0178 67.2 0.913 –22.7 1800 0.787 –50.7 2.79 117.4 0.0185 66.0 0.909 –23.8 1900 0.767 –52.4 2.74 114.4 0.0186 64.3 0.905 –25.5 2000 0.756 –55.0 2.69 110.9 0.0190 63.7 0.901 –26.6 7 3SK309 Power Gain, Noise Figure Test Circuit V G2 VD 1000 pF 1000 pF 47 k Unit : Resistance ( Ω ) Capacitance (F) RFC 1k 1000 pF L3 L1 L4 10 p max L2 Input (50 Ω ) 10 p max Output (50 Ω ) 47 k 1000 pF V G1 L1 to L4 : φ 1 mm copper wire 4 L1 : 6 L3 : 6 6 32 25 L2 : 7 26 5 90° 120° 21 L4 : 7 6 90° 120° Unit : mm RFC : 3 turn, 6 mm inside dia ( φ1 mm enameled copper wire) 8 3SK309 Package Dimentions Unit: mm 1.3 0.65 0.65 + 0.1 + 0.1 0.3 – 0.05 0.3 – 0.05 3 0.425 2.0 ±0.2 + 0.1 0.16 – 0.06 2.1 ±0.3 1.25 2 0 ~ 0.1 1 4 + 0.1 0.4 – 0.05 0.65 0.6 0.425 + 0.1 0.3 – 0.05 0.9 ±0.1 0.2 1.25 Hitachi code EIAJ JEDEC CMPAK-4 9 Datasheet Title Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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